MITSUBISHI MGFC44V6472 User Manual
m
< C band internally matched power GaAs FET >
MGFC44V6472
6.4 – 7.2 GHz BAND / 24W
DESCRIPTION
The MGFC44V6472 is an internally impedance-matched
GaAs power FET especially designed for use in 6.4 – 7.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=24W (TYP.) @f=6.4 – 7.2GHz
High power gain
GLP=8.0dB (TYP.) @f=6.4 – 7.2GHz
High power added efficiency
P.A.E.=31% (TYP.) @f=6.4 – 7.2GHz
Low distortion [item -51]
IM3=-42dBc (TYP.) @Po=33.5dBm S.C.L
APPLICATION
item 01 : 6.4 – 7.2 GHz band power amplifier
item 51 : 6.4 – 7.2 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=6.4A RG=25ohm Refer to Bias Procedure
OUTLINE
N
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GF-38
24 +/- 0.3
(1)
20.4 +/- 0.2
16.7
0.6 +/- 0.15
(3)
(1) gate
(2) source(flange)
(3)drain
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 20 A
IGR Reverse gate current -60 mA
IGF Forward gate current 126 mA
PT *1 Total power dissipation 93 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Gate to drain
breakdown voltage -15 V
Electrical characteristics
(Ta=25C)
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 7 8 - dB
P.A.E. Power added efficiency - 31 - %
IM3 *2 3rd order IM distortion -42 - - dBc
Rth(ch-c) *3
Saturated drain current VDS=3V,VGS=0V - 18
Transconductance VDS=3V,ID=6.4A - 6.5
Gate to source cut-off voltage VDS=3V,ID=120mA -2 - -5 V
Output power at 1dB gain compression
Thermal resistance
*2 :item -51 ,2 tone test,Po=33.5dBm Single Carrier Level ,f=7.2GHz,delta f=10MHz
*3 :Channel-case
VDS=10V,ID(RF off)=6.4A
f=6.4 – 7.2GHz
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
- A
- S
43 44 - dBm
- - 1.6 C/W
uni t : m
(2)
5
0
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0
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+
1
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0
2
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0
-
/
+
4
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2
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC44V6472
6.4 – 7.2 GHz BAND / 24W
MGFC44V6472 TYPICAL CHARACTERISTICS( Ta=25deg.C )
P1dB,GLP vs. f Po,PAE vs. Pin
Po,IM3 vs. Pin
MGFC44V6472 S-parameters
f
(GHz)
6.4 0.55 81 2.46 -124 0.039 -168 0.33 67
6.5 0.51 62 2.52 -141 0.042 173 0.35 71
6.6 0.46 43 2.49 -157 0.051 157 0.32 63
6.7 0.41 25 2.58 -174 0.054 138 0.32 51
6.8 0.37 3 2.60 169 0.062 126 0.31 29
6.9 0.33 -16 2.62 152 0.065 105 0.26 30
7.0 0.28 -37 2.64 136 0.071 91 0.22 16
7.1 0.26 -55 2.68 125 0.071 84 0.19 8
7.2 0.19 -91 2.65 107 0.076 65 0.13 0
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
S11 S21 S12 S22
( Ta=25deg.C , VDS=10(V),IDS=6.4(A) )
S Parameters(Typ.)
Publication Date : Apr., 2011
2
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