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< C band internally matched power GaAs FET >
MGFC44V3642
3.6 – 4.2 GHz BAND / 24W
DESCRIPTION
The MGFC44V3642 is an internally impedance-matched
GaAs power FET especially designed for use in 3.6 – 4.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=24W (TYP.) @f=3.6 – 4.2GHz
High power gain
GLP=11.0dB (TYP.) @f=3.6 – 4.2GHz
High power added efficiency
P.A.E.=35% (TYP.) @f=3.6 – 4.2GHz
Low distortion [item -51]
IM3=-42dBc (TYP.) @Po=33.5dBm S.C.L
APPLICATION
item 01 : 3.6 – 4.2 GHz band power amplifier
item 51 : 3.6 – 4.2 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=6.4A RG=25ohm
OUTLINE
N
I
M
2
R1. 2
2
2
.
.
0
0
-
-
/
/
+
+
4
0
.
.
7
8
1
N
I
M
2
4
.
0
-
/
+
3
.
4
4
.
1
GF-38
24 +/- 0.3
(1)
20.4 +/- 0.2
16.7
0.6 +/- 0.15
(3)
(1) gate
(2) source(flange)
(3)drain
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 20 A
IGR Reverse gate current -60 mA
IGF Forward gate current 126 mA
PT *1 Total power dissipation 93 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Gate to drain
breakdown voltage -15 V
Electrical characteristics
(Ta=25C)
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 10 11 - dB
P.A.E. Power added efficiency - 35 - %
IM3 *2 3rd order IM distortion
Rth(ch-c) *3
Saturated drain current VDS=3V,VGS=0V - 18
Transconductance VDS=3V,ID=6.4A - 6.5
Gate to source cut-off voltage VDS=3V,ID=120mA -2 - -5 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - - 1.6
*2 :item -51 ,2 tone test,Po=33.5dBm Single Carrier Level ,f=4.2GHz,delta f=10MHz
*3 :Channel-case
VDS=10V,ID(RF off)=6.4A
f=3.6 – 4.2GHz
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
- A
- S
43 44 - dBm
-42 -45 - dBc
(2)
C/W
uni t : m
5
2
.
0
.
0
0
-
/
-
/
+
+
4
.
1
.
2
0
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC44V3642
3.6 – 4.2 GHz BAND / 24W
MGFC44V3642 TYPICAL CHARACTERISTICS( Ta=25deg.C )
MGFC44V3642 S-parameters( Ta=25deg.C , VDS=10(V),IDS=6.4(A) )
f
(GHz)
3.6 0.75 -23 2.91 -54 0.035 -102 -0.45 -16
3.7 0.72 -44 3.09 -77 0.038 -133 0.38 -40
3.8 0.70 -69 3.37 -102 0.049 -169 0.28 -75
3.9 0.61 -95 3.51 -129 0.052 176 0.23 -113
4.0 0.53 -122 3.65 -155 0.059 147 0.25 -153
4.1 0.42 -149 3.85 177 0.063 122 0.29 178
4.2 0.27 173 3.91 147 0.069 92 0.32 154
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
S11 S21 S12 S22
S Parameters(Typ.)
Publication Date : Apr., 2011
2
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