Mitsubishi MGFC4419 Datasheet

MGFC4419G

MITSUBISHI SEMICONDUCTOR <GaAs FET>

InGaAs HEMT Chip

MITSUBISHI ELECTRIC

PRELIMINARY

Notice : This is not a final specification Some parametric limits are subject to change.

DESCRIPTION

The MGFC4419G low-noise HEMT(High electron Mobility Transistor) is designed for use in X to K band amplifiers.

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

Symbol Parameter

Test conditions

Min. Typ. Max

Unit

Gate to Source cut-off voltage

VDS=2V, VGS=0V

µA

Transconductance

Gs Associated gain

13.5

NFmin Minimum noise figure

Parameter Ratings Unit

Gate to drain voltage -4 V

-4Gate to source voltage 60Drain current mA

Channel temperature

-65 ~ +125 °C

X to K band amplifiers.

APPLICATION

VGS (off)

0.5

—

Limits

Storage temperature

Total power dissipation

Symbol

VGDO VGSO ID

Tch Tstg

125

50 mW

( Ta=25°C )

—

60—

OUTLINE DRAWING

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.

°C

Gate to source leakage current Saturated drain currentIDSS

VGS=2V, VDS=0V

VDS=2V, ID=500µA

-1.5

—-0.1

—

FEATURES (TARGET)

Low noise figure NFmin,=0.5 dB (MAX.) @ f=12GHz

High associated gain Gs=12.0 dB (MIN.) @ f=12GHz

RECOMMENDED BIAS CONDITIONS

VDS=2V , ID=10mA

Refer to Bias Procedure

( Ta=25°C )

IG= -10µA —-3

Gate to drain breakdown voltageV(BR)GDO

—

IGSS

VDS=2V, ID=10mA

—

VDS=2V, ID=10mA f=12GHz

dB——

as of Jan.'98

(1/4)