Mitsubishi MGFC4419 Datasheet
MGFC4419G
MITSUBISHI SEMICONDUCTOR <GaAs FET>
InGaAs HEMT Chip
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
DESCRIPTION
The MGFC4419G low-noise HEMT(High electron Mobility
Transistor) is designed for use in X to K band amplifiers.
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
dB
Symbol Parameter
Test conditions
Min. Typ. Max
Unit
Gate to Source cut-off voltage
VDS=2V, VGS=0V
V
50
µA
Transconductance
V
Gs Associated gain
13.5
NFmin Minimum noise figure
Parameter Ratings Unit
Gate to drain voltage -4 V
-4Gate to source voltage
60Drain current mA
Channel temperature
-65 ~ +125 °C
X to K band amplifiers.
APPLICATION
gm
VGS (off)
0.5
—
—
Limits
Storage temperature
Total power dissipation
Symbol
VGDO
VGSO
ID
Tch
Tstg
PT
125
50 mW
V
( Ta=25°C )
—
—
60—
OUTLINE DRAWING
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
°C
Gate to source leakage current
Saturated drain currentIDSS
VGS=2V, VDS=0V
VDS=2V, ID=500µA
mA
-1.5
—-0.1
75
mS
—
FEATURES (TARGET)
Low noise figure
NFmin,=0.5 dB (MAX.) @ f=12GHz
High associated gain
Gs=12.0 dB (MIN.) @ f=12GHz
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
Refer to Bias Procedure
( Ta=25°C )
IG= -10µA —-3
Gate to drain breakdown voltageV(BR)GDO
—
IGSS
VDS=2V, ID=10mA
—
VDS=2V, ID=10mA
f=12GHz
12
dB——
as of Jan.'98
(1/4)
MGFC4419G
MITSUBISHI SEMICONDUCTOR <GaAs FET>
InGaAs HEMT Chip
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
Typical Characteristics
as of Jan.'98
(2/4)
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