MITSUBISHI MGFC42V7785A User Manual

< C band internally matched power GaAs FET >

MGFC42V7785A

7.7 – 8.5 GHz BAND / 16W

DESCRIPTION

The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES

Class A operation Internally matched to 50(ohm) system  High output power P1dB=16W (TYP.) @f=7.7 – 8.5GHz  High power gain GLP=7.0dB (TYP.) @f=7.7 – 8.5GHz  High power added efficiency P.A.E.=28% (TYP.) @f=7.7 – 8.5GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=32.0dBm S.C.L

APPLICATION

 item 01 : 7.7 – 8.5 GHz band power amplifier  item 51 : 7.7 – 8.5 GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=4.5A Refer to Bias Procedure  RG=25ohm

OUTLINE

I M

R1. 2

I M

+ 3

GF-38

24 +/- 0.3

(1)

20.4 +/- 0.2

16.7

0.6 +/- 0.15

(3)

(1) gate (2) source(flange) (3)drain

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO VGSO Gate to source breakdown voltage -15 V ID Drain current 15 A IGR Reverse gate current -40 mA IGF Forward gate current 84 mA PT *1 Total power dissipation 93.7 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Gate to drain

breakdown voltage -15 V

Electrical characteristics

(Ta=25C)

Symbol Parameter Test conditions Limits Unit

IDSS gm

VGS(off) P1dB GLP Linear Power Gain 6 7 - dB

ID Drain current - 4 - A

P.A.E. Power added efficiency - 28 - % IM3 *2 3rd order IM distortion

Rth(ch-c) *3

Saturated drain current VDS=3V,VGS=0V - 9 Transconductance VDS=3V,ID=4.4A - 4 Gate to source cut-off voltage VDS=3V,ID=80mA -2 - -4 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - - 1.6

*2 :item -51 ,2 tone test,Po=31.0dBm Single Carrier Level ,f=8.5GHz,delta f=10MHz *3 :Channel-case

VDS=10V,ID(RF off)=4.5A f=7.7 – 8.5GHz

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Min. Typ. Max.

12 A

- S

41 42 - dBm

-42 -45 - dBc

(2)

C/W



uni t : m

Publication Date : Apr., 2011

< C band internally matched power GaAs FET >

MGFC42V7785A

7.7 – 8.5 GHz BAND / 16W

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

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•All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).

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•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

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Keep safety first in your circuit designs!

Notes regarding these materials

Publication Date : Apr., 2011