MITSUBISHI MGFC42V6472A User Manual

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< C band internally matched power GaAs FET >

MGFC42V6472A

6.4 – 7.2 GHz BAND / 16W

DESCRIPTION

The MGFC42V6472A is an internally impedance-matched
GaAs power FET especially designed for use in 6.4 – 7.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Internally matched to 50(ohm) system
 High output power
P1dB=16W (TYP.) @f=6.4 – 7.2GHz
 High power gain
GLP=8.0dB (TYP.) @f=6.4 – 7.2GHz
 High power added efficiency
P.A.E.=31% (TYP.) @f=6.4 – 7.2GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=31.0dBm S.C.L

APPLICATION

 item 01 : 6.4 – 7.2 GHz band power amplifier
 item 51 : 6.4 – 7.2 GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=4.5A  RG=25ohm Refer to Bias Procedure

OUTLINE

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GF-38

24 +/- 0.3

(1)

20.4 +/- 0.2

16.7

0.6 +/- 0.15

(3)

(1) gate
(2) source(flange)
(3)drain

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 15 A
IGR Reverse gate current -40 mA
IGF Forward gate current 84 mA
PT *1 Total power dissipation 93.7 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Gate to drain

breakdown voltage -15 V

Electrical characteristics

(Ta=25C)

Symbol Parameter Test conditions Limits Unit

IDSS
gm

VGS(off)
P1dB
GLP Linear Power Gain 7 8 - dB

ID Drain current - 4.5 - A

P.A.E. Power added efficiency - 31 - %
IM3 *2 3rd order IM distortion

Rth(ch-c) *3

Saturated drain current VDS=3V,VGS=0V - 9
Transconductance VDS=3V,ID=4.4A - 4
Gate to source cut-off voltage VDS=3V,ID=80mA -2 -3 -4 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - - 1.6

*2 :item -51 ,2 tone test,Po=31.0dBm Single Carrier Level ,f=7.2GHz,delta f=10MHz
*3 :Channel-case

VDS=10V,ID(RF off)=4.5A
f=6.4 – 7.2GHz

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

12 A

- S

41.5 42.5 - dBm

-42 -45 - dBc

(2)

C/W

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Publication Date : Apr., 2011

1

< C band internally matched power GaAs FET >

MGFC42V6472A

6.4 – 7.2 GHz BAND / 16W

MGFC42V6472A TYPICAL CHARACTERISTICS( Ta=25deg.C )

OUTPUT POWER P1dB(dBm)

P1dB,Glp VS. f Po,Eadd VS. Pin

LINEAR POWER GAIN Glp(dB)

OUTPUT POWER Po(dBm)

POWER ADDED EFFICIENCY Eadd(%)

Po,IM 3 VS. Pin

OUTPUT POWER Po(dBm S. C.L)

MGFC42V6472A S-parameters

fS

(GHz) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)

6.40 0.41 77 2.83 -95 0.068 -147 0.30 67

6.50 0.40 59 2.80 -111 0.072 -162 0.35 59

6.60 0.38 42 2.78 -127 0.075 -177 0.40 54

6.70 0.36 26 2.72 -143 0.078 167 0.42 48

6.80 0.33 11 2.64 -158 0.080 151 0.44 42

6.90 0.28 -3 2.60 -173 0.081 137 0.45 36

7.00 0.22 -20 2.57 171 0.082 122 0.44 32

7.10 0.17 -46 2.53 157 0.084 108 0.43 28

7.20 0.14 -91 2.50 141 0.086 93 0.40 26

11

IM3(dBc)

( Ta=25deg.C , VDS=10(V),IDS=4.5(A) )

S Parameters (TYP.)

S

21

S

12

S

22

Publication Date : Apr., 2011

2