MITSUBISHI MGFC42V5964A User Manual

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< C band internally matched power GaAs FET >

MGFC42V5964A

5.9 – 6.4 GHz BAND / 16W

DESCRIPTION

The MGFC42V5964A is an internally impedance-matched
GaAs power FET especially designed for use in 5.9 – 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Internally matched to 50(ohm) system
 High output power
P1dB=16W (TYP.) @f=5.9 – 6.4GHz
 High power gain
GLP=9.0dB (TYP.) @f=5.9 – 6.4GHz
 High power added efficiency
P.A.E.=33% (TYP.) @f=5.9 – 6.4GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=31.0dBm S.C.L

APPLICATION

 item 01 : 5.9 – 6.4 GHz band power amplifier
 item 51 : 5.9 – 6.4 GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=4.5A  RG=25ohm Refer to Bias Procedure

OUTLINE

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GF-38

24 +/- 0.3

(1)

20.4 +/- 0.2

16.7

0.6 +/- 0.15

(3)

(1) gate
(2) source(flange)
(3)drain

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 15 A
IGR Reverse gate current -40 mA
IGF Forward gate current 84 mA
PT *1 Total power dissipation 93.7 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Gate to drain

breakdown voltage -15 V

Electrical characteristics

(Ta=25C)

Symbol Parameter Test conditions Limits Unit

IDSS
gm

VGS(off)
P1dB
GLP Linear Power Gain 8 9 - dB

ID Drain current - 4.5 - A

P.A.E. Power added efficiency - 33 - %
IM3 *2 3rd order IM distortion

Rth(ch-c) *3

Saturated drain current VDS=3V,VGS=0V - 9
Transconductance VDS=3V,ID=4.4A - 4
Gate to source cut-off voltage VDS=3V,ID=80mA -2 -3 -4 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - - 1.6

*2 :item -51 ,2 tone test,Po=31.0dBm Single Carrier Level ,f=6.4GHz,delta f=10MHz
*3 :Channel-case

VDS=10V,ID(RF off)=4.5A
f=5.9 – 6.4GHz

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

12 A

- S

41.5 42.5 - dBm

-42 -45 - dBc

(2)

C/W

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Publication Date : Apr., 2011

1

< C band internally matched power GaAs FET >

MGFC42V5964A

5.9 – 6.4 GHz BAND / 16W

MGFC42V5964A TYPICAL CHARACTERISTICS( Ta=25deg.C )

OUTPUT POW ER P1dB(dBm)

P1dB,Glp VS. f Po,Eadd VS. Pin

LINEA R POWER GAIN Glp(dB )

OUTP UT POWER Po(dBm)

POWER ADDED EFFICIENCY Eadd(%)

FREQUENCY f (GHz) INPUT POWER Pin(dBm)

Po,IM3 VS. Pin

IM3(dBc)

OUT PUT POWER Po(dBm S.C .L)

INPUT POWER Pin(dBm S.C.L.)

MGFC42V5964A S-parameters( Ta=25deg.C , VDS=10(V),IDS=4.5(A) )

fS

(GHz) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)

5.90 0.36 82 2.99 -74 0.071 -133 0.26 80

6.00 0.35 56 2.95 -91 0.071 -151 0.32 72

6.10 0.35 34 2.91 -108 0.072 -167 0.35 65

6.20 0.35 14 2.88 -124 0.078 177 0.37 58

6.30 0.34 -4 2.81 -140 0.079 161 0.41 53

6.40 0.33 -23 2.72 -157 0.079 146 0.43 48

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S Parameters (TYP.)

S

21

S

12

S

22

Publication Date : Apr., 2011

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