MITSUBISHI MGFC42V5258 User Manual
MGFC42V5258
5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
OUTLINE DRAWING
June/2004
4.0+/-0.4
2MIN
17.4+/-0.3
2MIN
DESCRIPTION
The MGFC42V5258 is an internally impedance-matched
GaAs power FET especially designed for use in 5.2 - 5.8
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 16W (TYP.) @ f=5.2 - 5.8 GHz
High power gain
GLP = 10.5 dB (TYP.) @ f=5.2 - 5.8GHz
High power added efficiency
P.A.E. = 31 % (TYP.) @ f=5.2 - 5.8GHz
MITSUBISHI SEMICONDUCTOR <GaAs FET>
Unit: millimeters
24+/-0.3
R1.25
R1.2
8.0+/-0.2
(1)
0.6+/-0.15
(2)
(3)
15.8
APPLICATION
5.2 - 5.8 GHz band power amplifier
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 4.5 (A)
RG=25 (ohm)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
VGSO Gate to source voltage -15 V
ID Drain current 15 A
IGR Reverse gate current -40 mA
IGF Forward gate current 84 mA
PT Total power dissipation *1 78.9 W
Tch Channel temperature 175 deg.C
Tstg Storage temperature -65 / +175 deg.C
*1 : Tc=25deg.C
(Ta=25deg.C)
GF-18
20.4+/-0.2
13.4
1.4
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
0.1
2.4+/-0.2
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions
IDSS Saturated drain current VDS = 3V , VGS = 0V - 9 12 A
gm Transconductance VDS = 3V , ID = 4.4A - 4 - S
VGS(off) Gate to source cut-off voltage VDS = 3V , ID = 80mA -2 -3 -4 V
P1dB
GLP Linear power gain VDS=10V, ID(RF off)=4.5A, f=5.2 - 5.8GHz 8 10.5 - dB
ID Drain current - 4.5 - A
P.A.E. Power added efficiency - 31 - %
Rth(ch-c)
*1 : Channel-case
Output power at 1dB gain
compression
Thermal resistance *1 delta Vf method - - 1.9
(Ta=25deg.C)
Limits Unit
Min. Typ. Max.
41.5 42.5 - dBm
deg.C/W
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V5258
June/2004
5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
MITSUBISHI
ELECTRIC
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