MITSUBISHI MGFC41V7177 User Manual

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< C band internally matched power GaAs FET >

MGFC41V7177

7.1 – 7.7 GHz BAND / 12W

DESCRIPTION

The MGFC41V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES

Class A operation Internally matched to 50(ohm) system  High output power P1dB=12W (TYP.) @f=7.1 – 7.7GHz  High power gain GLP=9.5dB (TYP.) @f=7.1 – 7.7GHz  High power added efficiency P.A.E.=33% (TYP.) @f=7.1 – 7.7GHz  Low distortion [ item -51] IM3=-45dBc (TYP.) @Po=30dBm S.C.L.

APPLICATION

 item 01 : 7.1 – 7.7 GHz band power amplifier

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=3.4A  RG=50ohm Refer to Bias Procedure

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO VGSO Gate to source breakdown voltage -15 V ID Drain current 12 A IGR Reverse gate current -30 mA IGF Forward gate current 63 mA PT *1 Total power dissipation 53.6 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

IDSS gm

VGS(off) P1dB GLP Linear Power Gain 7 8 - dB

P.A.E. Power added efficiency - 30 - %

IM3*2 3rd order IM distortion

Rth(ch-c) *3

*2 :Item-51,2-tone test Po=30dBm Signal Carrier Level f=7.7GHz Δf=10MHz *3 :Channel-case

Gate to drain

Saturated drain current VDS=3V,VGS=0V - - 12 A Transconductance VDS=3V,ID=3.0A - 3 - S Gate to source cut-off voltage VDS=3V,ID=30mA - - -5 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - - 2.8

breakdown voltage -15 V

(Ta=25C)

VDS=10V,ID(RF off)=3.4A f=7.1 – 7.7GHz

OUTLINE DRAWING Unit: millimeters (inches)

24+/-0.3

I M

GF-18

R1.25

R1.2

(1)

20.4+/-0.2

13.4

0.6+/-0.15

(2)

(3)

(1): GATE

: SOURCE (FLANGE

(3): DRAIN

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Min. Typ. Max.

40 41 - dBm

-42 -45 - dBc C/W

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Publication Date : Apr., 2011

< C band internally matched power GaAs FET >

MGFC41V7177

7.1 – 7.7 GHz BAND / 12W

MGFC41V7177 TYPICAL CHARACTERISTICS( Ta=25deg.C )

P1dB,GLP vs. f Po,PAE vs. Pin

Po,IM3 vs. f

MGFC41V7177 S-parameters( Ta=25deg.C , VDS=10(V),IDS=3.4(A) )

(GHz)

7.1 0.51 66 2.60 -131 0.066 172 0.22 106

7.2 0.45 57 2.60 -146 0.073 160 0.22 89

7.3 0.38 48 2.64 -161 0.079 146 0.22 71

7.4 0.29 40 2.65 -177 0.085 133 0.21 53

7.5 0.18 34 2.67 167 0.092 118 0.18 38

7.6 0.06 59 2.64 149 0.094 103 0.13 20

7.7 0.13 146 2.57 131 0.097 84 0.07 -13

Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)

S11 S21 S12 S22

S Parameters(Typ.)

Publication Date : Apr., 2011

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