Mitsubishi MGFC41V5964A Datasheet

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC41V5964

5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC41V5964 is an internally impedence matched

OUTLINE DRAWING

Unit: millimeters (inches)

GaAs power FET especially designed for use in 5.9 - 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high raliability.

FEATURES

Internally matched to 50ohm system
High output power
P1dB = 12W (TIP.) @ f=5.9 - 6.4 Hz
High power gain
GLP = 9.5 dB (TYP.) @ f=5.9 - 6.4 GHz
High power added efficiency
Eadd = 33 % (TYP.) @ f=5.9 - 6.4 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.

APPLICATION

5.9 - 6.4GHz band amplifiers

QUALITY GRADE

IG

RECOMMENDED BIAS CONDITIONS

VDS = 10V

(1): GATE

ID = 3.4 A

(2): SOURCE (FLANGE)

Rg = 50(ohm) Refer to Bias Procedure

GF-18

(3): DRAIN

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Ratings Unit
V

GDO

Gate to drain voltage -15 V

V

GSO

Gate to source voltage -15 V

I

D

Drain current 12 A

I

GR

Reverse gate current -30 mA

I

GF

Forward gate current 63 mA

P

T

Total power dissipation *1 53.6 W
Tch Channel temperature 175 DegreesC
Tstg Storage temperature -65 to +175 DegreesC
*1 : Tc=25 DegreesC

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Test conditions

Limits

Unit

Min Typ Max
IDSS Saturated drain current VDS = 3V , VGS = 0V - - 12 A
gm Transconductance VDS = 3V , ID = 3.0A - 3 - S
VGS(off) Gate to source cut-off voltage VDS = 3V , ID = 30mA - - -5 V

P1dB

Output power at 1dB gain
compression

40 41 - dBm

GLP Linear power gain VDS = 10V , ID = 3.4A , f = 5.9 - 6.4 GHz 8.5 9.5 - dB
Eadd Power added efficiency - 33 - %
IM3 *2 3rd order IM distortion -42 -45 - dBc
Rth(ch-c) Thermal resistance *1 Delta Vf method - - 2.8 C/W
*1 : Channel to case

*2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz

MITSUBISHI
ELECTRIC

4.0+/-0.4

1.4

2MIN

2.4+/-0.2

0.1

17.4+/-0.3

R1.25

2MIN

0.6+/-0.15

(1)

24+/-0.3

20.4+/-0.2

13.4

(3)

8.0+/-0.2

R1.2

15.8

(2)

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC41V5964

5.9-6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET

TYPICAL CHARACTERISTICS

(Ta=25 DegreesC)

S PARAMETERS

(Ta=25 DegreesC , VDS=10V , IDS=3.4A)

S Parameters (TYP.)

f

S

11

S

21

S

12

S

22

(GHz) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)

5.9 0.37 124 2.98 -81 0.051 -131 0.31 111

6.0 0.35 105 2.94 -96 0.053 -145 0.31 102

6.1 0.32 84 2.91 -112 0.058 -163 0.30 94

6.2 0.29 64 2.88 -128 0.060 -177 0.29 87

6.3 0.25 38 2.86 -144 0.064 167 0.26 82

6.4 0.23 8 2.83 -161 0.066 152 0.22 81

MITSUBISHI
ELECTRIC

Po,Eadd vs. Pin

20

25

30

35

40

45

15 20 25 30 35

I NPUT POWER Pin (dBm)

OUTPUT POWER Po (dBm)

0

20

40

60

80

100

VDS=10
V

VDS=10V
ID=3.4A
f=6.15GHz

Po

Eadd

POWER A DDED EF FICIENCY E add (%)

Po,IM3 vs. Pin

24

26

28

30

32

34

36

17 19 21 23 25 27

I NPUT POWER Pin (dBm) S.C.L.

OUTPUT POWER Po (dBm) S.C.L.

-60

-50

-40

-30

-20

-10

0

IM3

Po

IM3 (dBc)

VDS=10V
IDS=3.4A
f=6.4 G H z
Delta f =10 MHz
2-to ne test

P1dB,GLP vs. f

37

38

39

40

41

42

43

5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5
FREQUENCY f (GHz)

OUTPUT POWER P1dB (dBm)

6

8

10

12

14

16

18

LIN EAR POWER GA IN GLP (dB)

VDS=10V
ID=3.4A

P1dB

GLP