MITSUBISHI MGFC41V5964 User Manual

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< C band internally matched power GaAs FET >

MGFC41V5964

5.9 – 6.4 GHz BAND / 12W

DESCRIPTION

The MGFC41V5964 is an internally impedance-matched
GaAs power FET especially designed for use in 5.9 – 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=12W (TYP.) @f=5.9 – 6.4GHz
 High power gain
GLP=9.5dB (TYP.) @f=5.9 – 6.4GHz
 High power added efficiency
P.A.E.=33% (TYP.) @f=5.9 – 6.4GHz
 Low distortion [ item -51]
IM3=-45dBc (TYP.) @Po=30dBm S.C.L.

APPLICATION

 item 01 : 5.9 – 6.4 GHz band power amplifier

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=3.4A  RG=50ohm Refer to Bias Procedure

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 12 A
IGR Reverse gate current -30 mA
IGF Forward gate current 63 mA
PT *1 Total power dissipation 53.6 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

IDSS
gm

VGS(off)
P1dB
GLP Linear Power Gain 8.5 9.5 - dB

P.A.E. Power added efficiency - 33 - %

IM3*2 3rd order IM distortion

Rth(ch-c) *3

*2 :Item-51,2-tone test Po=30dBm Signal Carrier Level f=6.4GHz Δf=10MHz
*3 :Channel-case

Gate to drain

Saturated drain current VDS=3V,VGS=0V - - 12 A
Transconductance VDS=3V,ID=3.0A - 3 - S
Gate to source cut-off voltage VDS=3V,ID=30mA - - -5 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - - 2.8

breakdown voltage -15 V

(Ta=25C)

VDS=10V,ID(RF off)=3.4A
f=5.9 – 6.4GHz

OUTLINE DRAWING Unit: millimeters (inches)

24+/-0.3

N

I
M

2

3

.

0

-

/

+

4

.

7

1

N

I
M

2

4

.

0

-

/

+

0

.

4

GF-18

R1.25

R1.2

2

.

0

-

/

+

0

.

8

4

.

1

(1)

20.4+/-0.2

13.4

0.6+/-0.15

(2)

(3)

(1): GATE

: SOURCE (FLANGE

(3): DRAIN

2

.

0

-

/

+

4

.

1

.

2

0

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

40 41 - dBm

-42 -45 - dBc
C/W



8

.

5

1

Publication Date : Apr., 2011

1

< C band internally matched power GaAs FET >

MGFC41V5964

5.9 – 6.4 GHz BAND / 12W

MGFC41V5964 TYPICAL CHARACTERISTICS( Ta=25deg.C )

P1dB,GLP vs. f Po,PAE vs. Pin

Po,IM3 vs. f

MGFC41V5964 S-parameters( Ta=25deg.C , VDS=10(V),IDS=3.4(A) )

f

(GHz)

5.9 0.37 124 2.98 -81 0.051 -131 0.31 111

6.0 0.35 105 2.94 -96 0.053 -145 0.31 102

6.1 0.32 84 2.91 -112 0.058 -163 0.30 94

6.2 0.29 64 2.88 -128 0.060 -177 0.29 87

6.3 0.25 38 2.86 -144 0.064 167 0.26 82

6.4 0.23 8 2.83 -161 0.066 152 0.22 81

Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)

S11 S21 S12 S22

S Parameters(Typ.)

Publication Date : Apr., 2011

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