MITSUBISHI MGFC40V3742 User Manual

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< C band internally matched power GaAs FET >

MGFC40V3742

3.7 – 4.2 GHz BAND / 10W

DESCRIPTION

The MGFC40V3742 is an internally impedance-matched
GaAs power FET especially designed for use in 3.7 – 4.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=10W (TYP.) @f=3.7 – 4.2GHz
 High power gain
GLP=11dB (TYP.) @f=3.7 – 4.2GHz
 High power added efficiency
P.A.E.=32% (TYP.) @f=3.7 – 4.2GHz
 Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=29dBm S.C.L

APPLICATION

 item 01 : 3.7 – 4.2 GHz band power amplifier
 item 51 : 3.7 – 4.2 GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=2.4A  RG=50ohm Refer to Bias Procedure

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 7.5 A
IGR Reverse gate current -20 mA
IGF Forward gate current 42 mA
PT *1 Total power dissipation 42.8 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

IDSS
gm

VGS(off)
P1dB
GLP Linear Power Gain 9 11 - dB

ID Drain current - 2.4 - A

P.A.E. Power added efficiency - 32 - %
IM3 *2 3rd order IM distortion

Rth(ch-c) *3

*2 :item -51 ,2 tone test,Po=29dBm Single Carrier Level ,f=4.2GHz,delta f=10MHz
*3 :Channel-case

Gate to drain

Saturated drain current VDS=3V,VGS=0V - 4.5 6 A
Transconductance VDS=3V,ID=2.2A - 2 - S
Gate to source cut-off voltage VDS=3V,ID=40mA -2 -3 -4 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - - 3.5

breakdown voltage -15 V

(Ta=25C)

VDS=10V,ID(RF off)=2.4A
f=3.7 – 4.2GHz

OUTLINE DRAWING Unit: millimeters (inches)

24+/-0.3

N

I
M

2

3

.

0

-

/

+

4

.

7

1

N

I
M

2

4

.

0

-

/

+

0

.

4

GF-18

R1.25

R1.2

2

.

0

-

/

+

0

.

8

4

.

1

(1)

20.4+/-0.2

13.4

0.6+/-0.15

(2)

(3)

(1): GATE

: SOURCE (FLANGE

(3): DRAIN

2

.

0

-

/

+

4

.

1

.

2

0

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

39.5 40.5 - dBm

-42 -45 - dBc
C/W



8

.

5

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Publication Date : Apr., 2011

1

< C band internally matched power GaAs FET >

MGFC40V3742

3.7 – 4.2 GHz BAND / 10W

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Publication Date : Apr., 2011

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