MITSUBISHI MGFC39V7785A User Manual

< C band internally matched power GaAs FET >

MGFC39V7785A

7.7 – 8.5 GHz BAND / 8W

DESCRIPTION

The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

FEATURES

Class A operation Internally matched to 50(ohm) system  High output power P1dB=8W (TYP.) @f=7.7 – 8.5GHz  High power gain GLP= 7.5dB (TYP.) @f=7.7 – 8.5GHz  High power added efficiency P.A.E.=27% (TYP.) @f=7.7 – 8.5GHz  Low distortion [item -51] IM3=-45dBc (TYP.) @Po=28dBm S.C.L

APPLICATION

 item 01 : 7.7 – 8.5 GHz band power amplifier  item 51 : 7.7 – 8.5 GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=2.4A Refer to Bias Procedure  RG=50ohm

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO VGSO Gate to source breakdown voltage -15 V ID Drain current 7.5 A IGR Reverse gate current -20 mA IGF Forward gate current 42 mA PT *1 Total power dissipation 42.8 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

IDSS gm

VGS(off) P1dB GLP Linear Power Gain 6 7.5 - dB

ID Drain current - - 3 A

P.A.E. Power added efficiency - 27 - % IM3 *2 3rd order IM distortion

Rth(ch-c) *3

*2 :item -51 ,2 tone test,Po=28dBm Single Carrier Level ,f=8.5GHz,delta f=10MHz *3 :Channel-case

Gate to drain

Saturated drain current VDS=3V,VGS=0V - - 7.5 A Transconductance VDS=3V,ID=2.2A - 2 - S Gate to source cut-off voltage VDS=3V,ID=20mA - - -4.5 V

Output power at 1dB gain compression

Thermal resistance delta Vf method - - 3.5

breakdown voltage -15 V

(Ta=25C)

VDS=10V,ID(RF off)=2.4A f=7.7 – 8.5GHz

OUTLINE DRAWING

2MIN

(2)

12.9 +/-0.2

2MIN

1.6

4.5 +/-0.4

0.2

GF-8

Unit : millimeters

21.0 +/- 0 .3

(1)

0.6 +/-0 .1 5

(3)

10.7

17.0 +/-0.2

12.0

(2)

R-1.6

0.1

(1) GATE (2) SOURCE (FLANGE) (3) DRAIN

11.3

2.6 +/-0.2

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

Min. Typ. Max.

38 39.5 - dBm

-42 -45 - dBc C/W



Publication Date : Apr., 2011

< C band internally matched power GaAs FET >

MGFC39V7785A

7.7 – 8.5 GHz BAND / 8W

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

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Notes regarding these materials

Publication Date : Apr., 2011