MITSUBISHI MGFC39V7785A User Manual

< C band internally matched power GaAs FET >
MGFC39V7785A
7.7 – 8.5 GHz BAND / 8W
DESCRIPTION
FEATURES
Class A operation Internally matched to 50(ohm) system High output power P1dB=8W (TYP.) @f=7.7 – 8.5GHz High power gain GLP= 7.5dB (TYP.) @f=7.7 – 8.5GHz High power added efficiency P.A.E.=27% (TYP.) @f=7.7 – 8.5GHz Low distortion [item -51] IM3=-45dBc (TYP.) @Po=28dBm S.C.L
APPLICATION
item 01 : 7.7 – 8.5 GHz band power amplifier item 51 : 7.7 – 8.5 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=2.4A Refer to Bias Procedure RG=50ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO VGSO Gate to source breakdown voltage -15 V ID Drain current 7.5 A IGR Reverse gate current -20 mA IGF Forward gate current 42 mA PT *1 Total power dissipation 42.8 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS gm
VGS(off) P1dB GLP Linear Power Gain 6 7.5 - dB
ID Drain current - - 3 A
P.A.E. Power added efficiency - 27 - % IM3 *2 3rd order IM distortion
Rth(ch-c) *3
*2 :item -51 ,2 tone test,Po=28dBm Single Carrier Level ,f=8.5GHz,delta f=10MHz *3 :Channel-case
Gate to drain
Saturated drain current VDS=3V,VGS=0V - - 7.5 A Transconductance VDS=3V,ID=2.2A - 2 - S Gate to source cut-off voltage VDS=3V,ID=20mA - - -4.5 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - - 3.5
breakdown voltage -15 V
(Ta=25C)
VDS=10V,ID(RF off)=2.4A f=7.7 – 8.5GHz
OUTLINE DRAWING
2MIN
(2)
12.9 +/-0.2
2MIN
1.6
4.5 +/-0.4
0.2
GF-8
Unit : millimeters
21.0 +/- 0 .3
(1)
0.6 +/-0 .1 5
(3)
10.7
17.0 +/-0.2
12.0
(2)
R-1.6
0.1
(1) GATE (2) SOURCE (FLANGE) (3) DRAIN
11.3
2.6 +/-0.2
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Min. Typ. Max.
38 39.5 - dBm
-42 -45 - dBc C/W
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC39V7785A
7.7 – 8.5 GHz BAND / 8W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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Notes regarding these materials
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Publication Date : Apr., 2011
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