MITSUBISHI MGFC39V5864 User Manual
< C band internally matched power GaAs FET >
MGFC39V5864
5.8 – 6.75 GHz BAND / 8W
DESCRIPTION
The MGFC39V5867 is an internally impedance-matched
GaAs power FET especially designed for use in 5.8 – 6.75
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=8W (TYP.) @f=5.8 – 6.75GHz
High power gain
GLP=9dB (TYP.) @f=5.8 – 6.75GHz
APPLICATION
VSAT
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=2.4A RG=50ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 7.5 A
IGR Reverse gate current -20 mA
IGF Forward gate current 42 mA
PT *1 Total power dissipation 42.8 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 8 9 - dB
ID Drain current - - 3 A
P.A.E. Power added efficiency
Rth(ch-c) *2
*2 :Channel-case
Gate to drain
Saturated drain current VDS=3V,VGS=0V - - 7.5 A
Transconductance VDS=3V,ID=2.2A - 2 - S
Gate to source cut-off voltage VDS=3V,ID=20mA - - -4.5 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - - 3.5
breakdown voltage -15 V
(Ta=25C)
VDS=10V,ID(RF off)=2.4A
f=5.8 – 6.75GHz
OUTLINE DRAWING
2MIN
(2)
12.9 +/-0.2
2MIN
1.6
4.5 +/-0.4
0.2
GF-8
Unit : millimeters
21.0 +/- 0 .3
(1)
0.6 +/-0 .1 5
(3)
10.7
17.0 +/-0.2
12.0
(2)
R-1.6
0.1
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
11.3
2.6 +/-0.2
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
38 39 - dBm
- 30 - %
C/W
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC39V5864
5.8 – 6.75 GHz BAND / 8W
MGFC39V5867 TYPICAL CHARACTERISTICS( Ta=25deg.C )
P1dB,GLP vs. f Po,PAE vs. Pin
MGFC39V5867 S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.4(A) )
f
(GHz)
5.8 0.669 -173 2.927 13 0.043 -28 0.188 -100
5.9 0.658 171 2.916 -1 0.050 -16 0.155 -130
6.0 0.645 156 2.937 -14 0.055 -69 0.148 -160
6.1 0.632 143 2.948 -28 0.055 -76 0.166 176
6.2 0.618 130 2.933 -42 0.058 -90 0.201 154
6.3 0.598 119 2.928 -55 0.060 -104 0.241 139
6.4 0.574 108 2.909 -68 0.063 -117 0.282 126
6.5 0.543 98 2.903 -81 0.066 -131 0.320 115
6.6 0.502 87 2.927 -94 0.070 -143 0.353 104
6.7 0.450 76 2.945 -107 0.071 -156 0.380 94
6.8 0.384 65 2.995 -121 0.076 -168 0.398 84
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
S11 S21 S12 S22
S Parameters(Typ.)
Publication Date : Apr., 2011
2
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