MITSUBISHI MGFC39V5258 User Manual
< C band internally matched power GaAs FET >
MGFC39V5258
5.2 – 5.8 GHz BAND / 8W
DESCRIPTION
The MGFC39V5258 is an internally impedance-matched
GaAs power FET especially designed for use in 5.2 – 5.8
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=8W (TYP.) @f=5.2 – 5.8GHz
High power gain
GLP=9.0dB (TYP.) @f=5.2 – 5.8GHz
High power added efficiency
P.A.E.=30% (TYP.) @f=5.2 – 5.8GHz
APPLICATION
5.2 – 5.8 GHz band power amplifier
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=2.4A Refer to Bias Procedure RG=50ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 5.6 A
IGR Reverse gate current -20 mA
IGF Forward gate current 42 mA
PT *1 Total power dissipation 42.8 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 8 9 - dB
ID Drain current - 2.2 2.4 A
P.A.E. Power added efficiency - 30 - %
Rth(ch-c) *2
*2 :Channel-case
Gate to drain
Saturated drain current VDS=3V,VGS=0V - 4 5.6 A
Transconductance VDS=3V,ID=2.2A - 2 - S
Gate to source cut-off voltage VDS=3V,ID=20mA -2 -3 -4 V
Output power at 1dB gain compression
Thermal resistance
breakdown voltage -15 V
(Ta=25C)
VDS=10V,ID(RF off)=2.4A
f=5.2 – 5.8GHz
OUTLINE DRAWING
2MIN
(2)
12.9 +/-0.2
2MIN
1.6
4.5 +/-0.4
0.2
GF-8
Unit : millimeters
21.0 +/- 0 .3
(1)
0.6 +/-0 .1 5
(3)
10.7
17.0 +/-0.2
12.0
(2)
R-1.6
0.1
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
11.3
2.6 +/-0.2
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
38 39 - dBm
- - 3.5 C/W
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC39V5258
5.2 – 5.8 GHz BAND / 8W
MGFC39V5258 TYPICAL CHARACTERISTICS( Ta=25deg.C )
P1dB,GLP vs. f Po,PAE vs. Pin
S11,S22 vs. f S21,S12 vs. f
MGFC39V5258 S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.4(A) )
f
(GHz)
5.2 0.48 32 2.69 148 0.076 178 0.42 -47
5.3 0.36 11 2.80 133 0.077 164 0.43 -61
5.4 0.26 -19 2.79 114 0.077 146 0.45 -77
5.5 0.19 -71 2.99 99 0.076 127 0.47 -95
5.6 0.26 -139 2.98 81 0.070 105 0.48 -113
5.7 0.38 -170 2.95 62 0.068 84 0.46 -130
5.8 0.49 169 2.70 41 0.065 61 0.45 -146
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
S11 S21 S12 S22
S Parameters(Typ.)
Publication Date : Apr., 2011
2
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