< C band internally matched power GaAs FET >
MGFC39V5258
5.2 – 5.8 GHz BAND / 8W
DESCRIPTION
The MGFC39V5258 is an internally impedance-matched
GaAs power FET especially designed for use in 5.2 – 5.8
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=8W (TYP.) @f=5.2 – 5.8GHz
High power gain
GLP=9.0dB (TYP.) @f=5.2 – 5.8GHz
High power added efficiency
P.A.E.=30% (TYP.) @f=5.2 – 5.8GHz
APPLICATION
5.2 – 5.8 GHz band power amplifier
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=2.4A Refer to Bias Procedure RG=50ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 5.6 A
IGR Reverse gate current -20 mA
IGF Forward gate current 42 mA
PT *1 Total power dissipation 42.8 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 8 9 - dB
ID Drain current - 2.2 2.4 A
P.A.E. Power added efficiency - 30 - %
Rth(ch-c) *2
*2 :Channel-case
Gate to drain
Saturated drain current VDS=3V,VGS=0V - 4 5.6 A
Transconductance VDS=3V,ID=2.2A - 2 - S
Gate to source cut-off voltage VDS=3V,ID=20mA -2 -3 -4 V
Output power at 1dB gain compression
Thermal resistance
breakdown voltage -15 V
(Ta=25C)
VDS=10V,ID(RF off)=2.4A
f=5.2 – 5.8GHz
OUTLINE DRAWING
2MIN
(2)
12.9 +/-0.2
2MIN
1.6
4.5 +/-0.4
0.2
GF-8
Unit : millimeters
21.0 +/- 0 .3
(1)
0.6 +/-0 .1 5
(3)
10.7
17.0 +/-0.2
12.0
(2)
R-1.6
0.1
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
11.3
2.6 +/-0.2
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
38 39 - dBm
- - 3.5 C/W
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC39V5258
5.2 – 5.8 GHz BAND / 8W
MGFC39V5258 TYPICAL CHARACTERISTICS( Ta=25deg.C )
P1dB,GLP vs. f Po,PAE vs. Pin
S11,S22 vs. f S21,S12 vs. f
MGFC39V5258 S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.4(A) )
f
(GHz)
5.2 0.48 32 2.69 148 0.076 178 0.42 -47
5.3 0.36 11 2.80 133 0.077 164 0.43 -61
5.4 0.26 -19 2.79 114 0.077 146 0.45 -77
5.5 0.19 -71 2.99 99 0.076 127 0.47 -95
5.6 0.26 -139 2.98 81 0.070 105 0.48 -113
5.7 0.38 -170 2.95 62 0.068 84 0.46 -130
5.8 0.49 169 2.70 41 0.065 61 0.45 -146
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
S11 S21 S12 S22
S Parameters(Typ.)
Publication Date : Apr., 2011
2
< C band internally matched power GaAs FET >
MGFC39V5258
5.2 – 5.8 GHz BAND / 8W
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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Keep safety first in your circuit designs!
Notes regarding these materials
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
3
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