Mitsubishi MGFC39V3436A Datasheet
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC39V3436
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC39V3436 is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 8W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
GLP = 11 dB (TYP.) @ f=3.4 - 3.6GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz
Low distortion [item -51]
IM3=-45dBc(Typ.) @Po=28dBm S.C.L.
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier
item 51 : 3.4 - 3.6 GHz band digital ratio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 2.4 (A)
RG=50 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol Parameter Ratings Unit
making semiconductor products better and more reliable,
VGDO Gate to drain voltage -15 V
but there is always the possibility that trouble may occur
VGSO Gate to source voltage -15 V
with them. Trouble with semiconductors may lead to personal
ID Drain current 7.5 A
injury, fire or property damage. Remember to give due
IGR Reverse gate current -20 mA
consideration to safety when making your circuit designs,
IGF Forward gate current 42 mA
with appropriate measures such as (1)placement of
PT Total power dissipation *1 42.8 W
substitutive, auxiliary circuits, (2)use of non-flammable
Tch Channel temperature 175 deg.C
material or (3)prevention against any malfunction or mishap.
Tstg Storage temperature -65 / +175 deg.C
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol Parameter Test conditions
Limits Unit
Min. Typ. Max.
IDSS
Saturated drain current
VDS = 3V , VGS = 0V - - 7.5 A
gm
Transconductance
VDS = 3V , ID = 2.2A - 2 - S
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 20mA - - -4.5 V
P1dB
Output power at 1dB gain
compression
38 39 - dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=2.4A, f=3.4 - 3.6GHz 10 11 - dB
ID
Drain current
--3A
P.A.E.
Power added efficiency
-32- %
IM3
3rd order IM distortion *1
-42 -45 - dBc
Rth(ch-c)
Thermal resistance *2
delta Vf method - 3 3.5
deg.C/W
*1 : item -51,2 tone test,Po=28dBm Single Carrier Level,f=3.6GHz,delta f=5MHz
*2 : Channel-case
18-Sep-'98
MITSUBISHI
ELECTRIC
12.0
21.0 +/-0.3
10.7
(1)
17.0 +/-0.2
4
.
5
+
/
-
0
.
4
0
.
2
GF-8
1
.
6
2
M
I
N
(2)
1
2
.
9
+
/
-
0
.
2
2
M
I
N
OUTLINE DRAWING
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
0
.
1
2
.
6
+
/
-
0
.
2
R-1.6
(3)
(2)
1
1
.
3
0.6 +/-0.15
Unit : millimeters
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC39V3436
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS (Ta=25deg.C)
S parameters ( Ta=25deg.C , VDS=10(V),IDS=2.4(A) )
S-Parameters (TYP.)
f S11 S21 S12 S22
(GHz) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg)
3.30
0.48 -179 4.148 29 0.06 -38 0.28 -136
3.35
0.49 166 4.146 16 0.06 -52 0.29 -150
3.40
0.49 159 4.127 9 0.06 -58 0.29 -157
3.45
0.49 145 4.111 -4 0.06 -70 0.30 -170
3.50
0.48 133 4.119 -17 0.06 -79 0.31 178
3.55
0.46 126 4.123 -24 0.07 -85 0.32 171
3.60
0.43 112 4.079 -37 0.07 -97 0.33 158
3.65
0.38 98 4.072 -51 0.07 -113 0.33 145
3.70
0.36 88 4.049 -59 0.07 -118 0.33 140
18-Sep-'98
MITSUBISHI
ELECTRIC
P1dB,GLP vs. f
32
33
34
35
36
37
38
3.3 3.4 3.5 3.6 3.7
FREQUENCY f(GHz)
OUTPUT POWER P1dB (dBm)
11
12
13
14
15
16
17
LINEAR POWER GAIN GLP(dB)
P1dB
GLP
VDS=10(V)
IDS=1.2(A)
Po,IM3 vs Pin
19
21
23
25
27
29
31
33
7 9 11 13 15 17 19 21
INPUT POWER Pin(dBm S.C.L.)
OUTPUT POWER Po (dBm S.C.L)
-60
-50
-40
-30
-20
-10
0
10
IM3(dBc)
Po
PAE
VDS=10(V)
IDS=1.2(A)
f=3.6GHz
Delta f=5(MHz)
Po,PAE vs. Pin
20
22
24
26
28
30
32
34
36
38
40
10 15 20 25 30 35
INPUT POWER Pin (dBm)
OUTPUT POWER Po(dBm)
0
10
20
30
40
50
60
70
80
90
100
POWER ADDED EFFICIECY PAE(%)
Po
PAE
VDS=10(V)
IDS=1.2(A)
f=3.5(GHz)
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