MITSUBISHI MGFC38V6472 User Manual
< C band internally matched power GaAs FET >
MGFC38V6472
6.4 – 7.2 GHz BAND / 6W
DESCRIPTION
The MGFC38V6472 is an internally impedance-matched
GaAs power FET especially designed for use in 6.4 – 7.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=6W (TYP.) @f=6.4 – 7.2GHz
High power gain
GLP=9dB (TYP.) @f=6.4 – 7.2GHz
High power added efficiency
P.A.E.=31% (TYP.) @f=6.4 – 7.2GHz
Low distortion [ item -51]
IM3=-45dBc (TYP.) @Po=27dBm S.C.L.
APPLICATION
item 01 : 6.4 – 7.2 GHz band power amplifier
item 51 : 6.4 – 7.2 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.8A RG=100ohm Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 5 A
IGR Reverse gate current -15 mA
IGF Forward gate current 31.5 mA
PT *1 Total power dissipation 30 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 8 9 - dB
ID Drain current - 1.7 - A
P.A.E. Power added efficiency - 31 - %
IM3*2 3rd order IM distortion
Rth(ch-c) *3
*2 :Item-51,2-tone test Po=27dBm Signal Carrier Level f=7.2GHz Δf=10MHz
*3 :Channel-case
Gate to drain
Saturated drain current VDS=3V,VGS=0V - - 5 A
Transconductance VDS=3V,ID=1.5A - 2 - S
Gate to source cut-off voltage VDS=3V,ID=15mA - -3.5 -5 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - - 5
breakdown voltage -15 V
(Ta=25C)
VDS=10V,ID(RF off)=1.8A
f=6.4 – 7.2GHz
OUTLINE DRAWING
2MIN
(2)
12.9 +/-0.2
2MIN
1.6
4.5 +/-0.4
0.2
GF-8
Unit : millimeters
21.0 +/- 0 .3
(1)
0.6 +/-0 .1 5
(3)
10.7
17.0 +/-0.2
12.0
(2)
R-1.6
0.1
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
11.3
2.6 +/-0.2
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
37 38 - dBm
-42 -45 - dBc
C/W
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC38V6472
6.4 – 7.2 GHz BAND / 6W
MGFC38V6472 TYPICAL CHARACTERISTICS( Ta=25deg.C )
P1dB,GLP vs. f Po,PAE vs. Pin
Po,IM3 vs. f
MGFC38V6472 S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.8(A) )
f
(GHz)
6.4 0.56 154 2.84 -47 0.049 -93 0.15 -172
6.5 0.52 142 2.96 -64 0.051 -105 0.17 148
6.6 0.45 131 2.94 -80 0.053 -123 0.21 128
6.7 0.39 123 3.01 -97 0.059 -138 0.27 106
6.8 0.30 119 3.02 -115 0.062 -155 0.30 89
6.9 0.25 126 2.98 -134 0.071 -171 0.31 76
7.0 0.21 143 2.93 -153 0.070 170 0.30 57
7.1 0.24 153 2.84 -166 0.070 161 0.28 44
7.2 0.33 161 2.68 174 0.063 138 0.26 30
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
S11 S21 S12 S22
S Parameters(Typ.)
Publication Date : Apr., 2011
2
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