MITSUBISHI MGFC38V5867 User Manual
< C band internally matched power GaAs FET >
MGFC38V5867
5.8 – 6.75 GHz BAND / 6W
DESCRIPTION
The MGFC38V5867 is an internally impedance-matched
GaAs power FET especially designed for use in 5.8 – 6.75
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=6W (TYP.) @f=5.8 – 6.75GHz
High power gain
GLP=10dB (TYP.) @f=5.8 – 6.75GHz
APPLICATION
VSAT
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.8A RG=100ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 5 A
IGR Reverse gate current -15 mA
IGF Forward gate current 21.5 mA
PT *1 Total power dissipation 30 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 8.0 10 - dB
ID Drain current - 1.7 - A
P.A.E. Power added efficiency
Rth(ch-c) *2
*2 :Channel-case
Gate to drain
Saturated drain current VDS=3V,VGS=0V - - 5 A
Transconductance VDS=3V,ID=1.5A - 2 - S
Gate to source cut-off voltage VDS=3V,ID=15mA - - -4.5 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - - 5
breakdown voltage -15 V
(Ta=25C)
VDS=10V,ID(RF off)=1.8A
f=5.8 – 6.75GHz
OUTLINE DRAWING
2MIN
(2)
12.9 +/-0.2
2MIN
1.6
4.5 +/-0.4
0.2
GF-8
Unit : millimeters
21.0 +/- 0 .3
(1)
0.6 +/-0 .1 5
(3)
10.7
17.0 +/-0.2
12.0
(2)
R-1.6
0.1
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
11.3
2.6 +/-0.2
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
37 38 - dBm
- 32 - %
C/W
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC38V5867
5.8 – 6.75 GHz BAND / 6W
MGFC38V5867 TYPICAL CHARACTERISTICS( Ta=25deg.C )
P1dB,GLP vs. f Po,PAE vs. Pin
MGFC38V5867 S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.8(A) )
f
(GHz)
5.8 0.433 -139 3.314 37 0.036 14 0.449 -68
5.9 0.387 -168 3.402 21 0.041 -13 0.369 -83
6.0 0.354 163 3.493 4 0.047 -36 0.305 -98
6.1 0.339 135 3.549 -14 0.052 -58 0.262 -117
6.2 0.329 109 3.541 -31 0.056 -78 0.224 -139
6.3 0.315 84 3.498 -48 0.062 -96 0.210 -166
6.4 0.297 59 3.416 -65 0.064 -112 0.213 169
6.5 0.276 33 3.328 -82 0.068 -130 0.228 146
6.6 0.259 4 3.243 -99 0.070 -147 0.244 126
6.7 0.262 -30 3.133 -117 0.071 -164 0.261 111
6.8 0.287 -64 3.008 -135 0.071 -179 0.266 97
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
S11 S21 S12 S22
S Parameters(Typ.)
Publication Date : Apr., 2011
2
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