MITSUBISHI MGFC36V7177A User Manual

< C band internally matched power GaAs FET >

MGFC36V7177A

7.1 – 7.7 GHz BAND / 4W

DESCRIPTION

The MGFC36V7177A is an internally impedance-matched
GaAs power FET especially designed for use in 7.1 – 7.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.

FEATURES

Class A operation
Internally matched to 50(ohm) system
 High output power
P1dB=4W (TYP.) @f=7.1 – 7.7GHz
 High power gain
GLP=9.0dB (TYP.) @f=7.1 – 7.7GHz
 High power added efficiency
P.A.E.=30% (TYP.) @f=7.1 – 7.7GHz
 Low distortion [ item -51]
IM3=-45dBc (TYP.) @Po=25dBm S.C.L.

APPLICATION

 item 01 : 7.1 – 7.7 GHz band power amplifier
 item 51 : 7.1 – 7.7 GHz band digital radio communication

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=1.2A Refer to Bias Procedure  RG=100ohm

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 3.75 A
IGR Reverse gate current -10 mA
IGF Forward gate current 21 mA
PT *1 Total power dissipation 25 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

IDSS
gm

VGS(off)
P1dB
GLP Linear Power Gain 8 9 - dB

ID Drain current - - 1.8 A

P.A.E. Power added efficiency - 30 - %

IM3 *2 3rd order IM distortion -42 -45 - dBc

Rth(ch-c) *3

*2 :Item -51,2 tone test, Po=25dBm Single Carrier Level, f=7.7GHz, Delta f=10MHz
*3 :Channel-case

Gate to drain

Saturated drain current VDS=3V,VGS=0V - - 3.75 A
Transconductance VDS=3V,ID=1.1A - 1 - S
Gate to source cut-off voltage VDS=3V,ID=10mA - - -4.5 V

Output power at 1dB gain compression

Thermal resistance

breakdown voltage -15 V

(Ta=25C)

VDS=10V,ID(RF off)=1.2A
f=7.1 – 7.7GHz

OUTLINE DRAWING

2MIN

(2)

12.9 +/-0.2

2MIN

1.6

4.5 +/-0.4

0.2

GF-8

Unit : millimeters

21.0 +/- 0 .3

(1)

0.6 +/-0 .1 5

(3)

10.7

17.0 +/-0.2

12.0

(2)

R-1.6

0.1

(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN

11.3

2.6 +/-0.2

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

Min. Typ. Max.

35 36.5 - dBm

- 5 6 C/W

Publication Date : Apr., 2011

1

< C band internally matched power GaAs FET >

MGFC36V7177A

7.1 – 7.7 GHz BAND / 4W

MGFC36V7177A TYPICAL CHARACTERISTICS( Ta=25deg.C )

P1dB,GLP vs. f

Po,PAE vs. Pin

Po,IM3 vs. Pin

MGFC36V7177A S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.2(A) )

f

(GHz)

7.1 0.41 172 2.85 -109 0.077 -157 0.25 15

7.2 0.35 160 2.92 -124 0.082 -171 0.24 0

7.3 0.29 148 2.97 -139 0.087 174 0.23 -18

7.4 0.22 134 2.98 -154 0.091 160 0.21 -39

7.5 0.14 123 2.93 -169 0.096 144 0.20 -65

7.6 0.10 132 2.88 174 0.098 129 0.19 -93

7.7 0.18 130 2.79 158 0.099 113 0.21 -121

Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)

S11 S21 S12 S22

S Parameters(Typ.)

Publication Date : Apr., 2011

2