MITSUBISHI MGFC36V5964A User Manual
< C band internally matched power GaAs FET >
MGFC36V5964A
5.9 -6.4 GHz BAND / 4W
DESCRIPTION
The MGFC36V5964A is an internally impedance-matched
GaAs power FET especially designed for use in 5.9 – 6.4
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=4W (TYP.) @f=5.9 – 6.4GHz
High power gain
GLP=10.5dB (TYP.) @f=5.9 – 6.4GHz
High power added efficiency
P.A.E.=30% (TYP.) @f=5.9 – 6.4GHz
Low distortion [ item -51]
IM3=-45dBc (TYP.) @Po=25dBm S.C.L.
APPLICATION
item 01 : 5.9 – 6.4 GHz band power amplifier
item 51 : 5.9 – 6.4 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.2A Refer to Bias Procedure RG=100ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 3.75 A
IGR Reverse gate current -10 mA
IGF Forward gate current 21 mA
PT *1 Total power dissipation 25 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 9 10.5 - dB
ID Drain current - - 1.8 A
P.A.E. Power added efficiency - 30 - %
IM3 *2 3rd order IM distortion
Rth(ch-c) *3
*2 :Item -51,2 tone test, Po=25dBm Single Carrier Level, f=6.4GHz, Delta f=10MHz
*3 :Channel-case
Gate to drain
Saturated drain current VDS=3V,VGS=0V - - 3.75 A
Transconductance VDS=3V,ID=1.1A - 1 - S
Gate to source cut-off voltage VDS=3V,ID=10mA - - -4.5 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - 5 6
breakdown voltage -15 V
(Ta=25C)
VDS=10V,ID(RF off)=1.2A
f=5.9 – 6.4GHz
OUTLINE DRAWING
2MIN
(2)
12.9 +/-0.2
2MIN
1.6
4.5 +/-0.4
0.2
GF-8
Unit : millimeters
21.0 +/- 0 .3
(1)
0.6 +/-0 .1 5
(3)
10.7
17.0 +/-0.2
12.0
(2)
R-1.6
0.1
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
11.3
2.6 +/-0.2
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
35 37 - dBm
-42 -45 - dBc
C/W
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC36V5964A
5.9 – 6.4 GHz BAND / 4W
MGFC36V5964A TYPICAL CHARACTERISTICS( Ta=25deg.C )
P1dB,GLP vs. f
Po,PAE vs. Pin
Po,IM3 vs. Pin
MGFC36V5964A S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.2(A) )
f
(GHz)
5.9 0.22 -171 3.29 -27 0.079 -70 0.47 -172
6.0 0.12 145 3.40 -44 0.081 -89 0.41 178
6.1 0.12 60 3.49 -59 0.082 -104 0.34 166
6.2 0.23 20 3.49 -75 0.084 -120 0.27 153
6.3 0.35 -1 3.32 -91 0.081 -135 0.19 139
6.4 0.44 -16 3.08 -106 0.079 -149 0.13 124
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
S11 S21 S12 S22
S Parameters(Typ.)
Publication Date : Apr., 2011
2
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