MITSUBISHI MGFC36V5867 User Manual
< C band internally matched power GaAs FET >
MGFC36V5867
5.8 – 6.75 GHz BAND / 4W
DESCRIPTION
The MGFC36V5867 is an internally impedance-matched
GaAs power FET especially designed for use in 5.8 – 6.75
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=4W (TYP.) @f=5.8 – 6.75GHz
High power gain
GLP=10dB (TYP.) @f=5.8 – 6.75GHz
APPLICATION
VSAT
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.2A RG=100ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 3.75 A
IGR Reverse gate current -10 mA
IGF Forward gate current 21 mA
PT *1 Total power dissipation 25 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 8.5 10 - dB
ID Drain current - - 1.8 A
P.A.E. Power added efficiency
Rth(ch-c) *2
*2 :Channel-case
Gate to drain
Saturated drain current VDS=3V,VGS=0V - - 3.75 A
Transconductance VDS=3V,ID=1.1A - 1 - S
Gate to source cut-off voltage VDS=3V,ID=10mA - - -4.5 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - 5 6
breakdown voltage -15 V
(Ta=25C)
VDS=10V,ID(RF off)=1.2A
f=5.8 – 6.75GHz
OUTLINE DRAWING
2MIN
(2)
12.9 +/-0.2
2MIN
1.6
4.5 +/-0.4
0.2
GF-8
Unit : millimeters
21.0 +/- 0 .3
(1)
0.6 +/-0 .1 5
(3)
10.7
17.0 +/-0.2
12.0
(2)
R-1.6
0.1
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
11.3
2.6 +/-0.2
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
35 36 - dBm
- 30 - %
C/W
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC36V5867
5.8 – 6.75 GHz BAND / 4W
MGFC36V5867 TYPICAL CHARACTERISTICS( Ta=25deg.C )
P1dB,GLP vs. f Po,PAE vs. Pin
MGFC36V5867 S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.2(A) )
f
(GHz)
5.8 0.48 155 3.409 -29 0.07 -78 0.33 179
5.9 0.47 136 3.426 -42 0.07 -91 0.29 164
6.0 0.46 116 3.472 -55 0.07 -104 0.26 147
6.1 0.44 98 3.494 -70 0.07 -117 0.24 132
6.2 0.42 79 3.465 -84 0.08 -132 0.21 114
6.3 0.40 60 3.446 -98 0.08 -145 0.20 96
6.4 0.39 39 3.397 -112 0.08 -157 0.19 77
6.5 0.37 17 3.356 -126 0.08 -172 0.18 57
6.6 0.37 -7 3.297 -141 0.08 173 0.18 34
6.7 0.38 -33 3.221 -156 0.08 161 0.18 12
6.8 0.41 -58 3.116 -171 0.08 146 0.19 -12
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
S11 S21 S12 S22
S Parameters(Typ.)
Publication Date : Apr., 2011
2
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