MITSUBISHI MGFC36V5258 User Manual
< C band internally matched power GaAs FET >
MGFC36V5258
5.2 – 5.8 GHz BAND / 4W
DESCRIPTION
The MGFC36V5258 is an internally impedance-matched
GaAs power FET especially designed for use in 5.2 – 5.8
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=4W (TYP.) @f=5.2 – 5.8GHz
High power gain
GLP=10dB (TYP.) @f=5.2 – 5.8GHz
High power added efficiency
P.A.E.=32% (TYP.) @f= 5.2 – 5.8GHz
APPLICATION
5.2 – 5.8 GHz band power amplifier
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=1.2A Refer to Bias Procedure RG=100ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 2.8 A
IGR Reverse gate current -10 mA
IGF Forward gate current 21 mA
PT *1 Total power dissipation 25 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 9 10 - dB
ID Drain current - 1.1 1.4 A
P.A.E. Power added efficiency
Rth(ch-c) *2
*2 :Channel-case
Gate to drain
Saturated drain current VDS=3V,VGS=0V - 2.0 2.8 A
Transconductance VDS=3V,ID=1.1A - 1 - S
Gate to source cut-off voltage VDS=3V,ID=10mA -2 -3 -4 V
Output power at 1dB gain compression
Thermal resistance delta Vf method - - 6
breakdown voltage -15 V
(Ta=25C)
VDS=10V,ID(RF off)=1.2A
f=5.2 – 5.8GHz
OUTLINE DRAWING
2MIN
(2)
12.9 +/-0.2
2MIN
1.6
4.5 +/-0.4
0.2
GF-8
Unit : millimeters
21.0 +/- 0 .3
(1)
0.6 +/-0 .1 5
(3)
10.7
17.0 +/-0.2
12.0
(2)
R-1.6
0.1
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
11.3
2.6 +/-0.2
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
35 36 - dBm
- 33 - %
C/W
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC36V5258
5.2 – 5.8 GHz BAND / 4W
MGFC36V5258 TYPICAL CHARACTERISTICS( Ta=25deg.C )
P1dB,GLP vs. f Po,PAE vs. Pin
S11,S22 vs. f S21,S12 vs. f
MGFC36V5258 S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.2(A) )
f
(GHz)
5.2 0.43 13 3.27 138 0.062 156 0.51 -17
5.3 0.30 -3 3.30 122 0.062 138 0.48 -28
5.4 0.19 -41 3.45 105 0.062 120 0.46 -39
5.5 0.18 -99 3.61 89 0.060 102 0.43 -51
5.6 0.28 -152 3.61 73 0.061 78 0.34 -66
5.7 0.39 179 3.45 55 0.059 56 0.26 -80
5.8 0.51 161 3.19 36 0.058 32 0.17 -98
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
S11 S21 S12 S22
S Parameters(Typ.)
Publication Date : Apr., 2011
2
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