MITSUBISHI MGFC36V4450A User Manual

MITSUBISHI

June/2004

ELECTRIC

查询MGFC36V4450A供应商

4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET

DESCRIPTION

The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGFC36V4450A

OUTLINE DRAWING

Unit : millimeters

21.0 +/-0.3

FEATURES

Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP.) @ f=4.4~5.0GHz High power gain GLP = 12 dB (TYP.) @ f=4.4~5.0GHz High power added efficiency P.A.E. = 32 % (TYP.) @ f=4.4~5.0GHz Low distortion [ item -51 ] IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.

APPLICATION

item 01 : 4.4~5.0 GHz band power amplifier item 51 : 4.4~5.0 GHz band digital radio communication

QUALITY GRADE

RECOMMENDED BIAS CONDITIONS

VDS = 10 (V) ID = 1.2(A) Refer to Bias Procedure RG= 100 (ohm)

2MIN

(2)

12.9 +/-0.2

2MIN

1.6

4.5 +/-0.4

GF-8

0.2

(1)

0.6 +/-0.15

(3)

10.7

17.0 +/-0.2

12.0

(2)

R-1.6

0.1

(1) GATE (2) SOURCE (FLANGE) (3) DRAIN

11.3

2.6 +/-0.2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Ratings Unit VGDO Gate to drain voltage -15 V VGSO Gate to source voltage -15 V ID Drain current 3.75 A IGR Reverse gate current -10 mA IGF Forward gate current 21 mA PT Total power dissipation *1 25 W Tch Channel temperature 175 deg.C Tstg Storage temperature -65 / +175 deg.C *1 : Tc=25 deg.C

ELECTRICAL CHARACTERISTICS

Symbol Unit IDSS Saturated drain current VDS=3V, VGS=0V - - 3.75 A

gm Transconductance VDS=3V, ID=1.1A - 1 - S VGS(off) Gate to source cut-off voltage VDS=3V, ID=10mA - - -4.5 V P1dB Output power at 1dB gain compression 35 37 - dBm GLP Linear power gain VDS=10V, ID(RF off)=1.2A, f=4.4~5.0GHz 9 12 - dB ID Drain current - - 1.8 A P.A.E. Power added efficiency - 32 - % IM3 3rd order IM distortion *1 -42 -45 - dBc Rth(ch-c) Thermal resistance *2 Delta Vf method - 5 6 deg.C/W *1 : item -51, 2 tone test, Po=25dBm Single Carrier Level, f=5GHz, Delta f=10MHz *2 : Channel to case

Parameter Test conditions

(Ta=25 deg.C)

< Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap.

Limits

Min. Typ. Max.