Mitsubishi MGFC36V3436 Datasheet
DESCRIPTION
The MGFC36V3436 is an internally impedance-matched
GaAs power FET especially designed for use in 3.4 - 3.6
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 4W (TYP.) @ f=3.4 - 3.6 GHz
High power gain
GLP = 12 dB (TYP.) @ f=3.4 - 3.6GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=3.4 - 3.6GHz
Low distortion [item -51]
IM3=-45dBc(Typ.) @Po=25dBm S.C.L.
APPLICATION
item 01 : 3.4 - 3.6 GHz band power amplifier
item 51 : 3.4 - 3.6 GHz band digital ratio communication
QUALITY GRADE
IG
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC36V3436
3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
OUTLINE DRAWING
2
N
.
I
0
M
-
2
/
+
(2)
9
.
2
1
N
I
M
2
4
.
0
/
+
6
.
5
1
.
4
2
.
0
21.0 +/-0.3
(1)
10.7
17.0 +/-0.2
12.0
Unit : millimeters
0.6 +/-0.15
(3)
(2)
R-1.6
3
.
1
1
2
.
0
/
+
1
6
.
.
0
2
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 1.2 (A)
RG=100 (ohm)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
VGSO Gate to source voltage -15 V
ID Drain current 3.75 A
IGR Reverse gate current -10 mA
IGF Forward gate current 21 mA
PT Total power dissipation *1 25 W
Tch Channel temperature 175 deg.C
Tstg Storage temperature -65 / +175 deg.C
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions
IDSS
gm
VGS(off)
P1dB
GLP
ID
P.A.E.
IM3
Rth(ch-c)
*1 : item -51,2 tone test,Po=25dBm Single Carrier Level,f=3.6GHz,delta f=5MHz
*2 : Channel-case
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain
compression
Linear power gain
Drain current
Power added efficiency
3rd order IM distortion *1
Thermal resistance *2
VDS = 3V , VGS = 0V - - 3.75 A
VDS = 3V , ID = 1.1A - 1 - S
VDS = 3V , ID = 10mA - - -4.5 V
delta Vf method - 5 6
(Ta=25deg.C)
(Ta=25deg.C)
VDS=10V, ID(RF off)=1.2A, f=3.4 - 3.6GHz 11 12 - dB
GF-8
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
MITSUBISHI
ELECTRIC
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
< Keep safety first in your circuit designs! >
Limits Unit
Min. Typ. Max.
35 36 - dBm
- 1.1 1.8 A
-32- %
-42 -45 - dBc
deg.C/W
18-Sep-'98
TYPICAL CHARACTERISTICS
(
)
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC36V3436
3.4 - 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET
Ta=25deg.C
38
VDS=10(V)
IDS=1.2(A)
P1dB
37
36
P1dB,GLP vs. f
35
OUTPUT POWER P1dB (dBm)
GLP
34
33
32
3.3 3.4 3.5 3.6 3.7
FREQUENCY f(GHz)
Po,IM3 vs Pin
33
VDS=10(V)
IDS=1.2(A)
f=3.6GHz
31
Delta f=5(MHz)
29
Po
17
16
15
14
13
12
LINEAR POWER GAIN GLP(dB)
11
10
0
-10
Po,PAE vs. Pin
40
38
36
VDS=10(V)
IDS=1.2(A)
f=3.5(GHz)
Po
34
32
OUTPUT POWER Po(dBm)
30
PAE
28
26
24
22
20
10 15 20 25 30 35
INPUT POWER Pin (dBm)
100
90
80
70
60
50
40
30
20
10
POWER ADDED EFFICIECY PAE(%)
0
27
OUTPUT POWER Po (dBm S.C.L)
25
23
21
19
PAE
-20
-30
-40
-50
-60
IM3(dBc)
7 9 11 13 15 17 19 21
INPUT POWER Pin(dBm S.C.L.)
S parameters ( Ta=25deg.C , VDS=10(V),IDS=1.2(A) )
S-Parameters (TYP.)
f S11 S21 S12 S22
(GHz) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg)
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
0.48 -179 4.148 29 0.06 -38 0.28 -136
0.49 166 4.146 16 0.06 -52 0.29 -150
0.49 159 4.127 9 0.06 -58 0.29 -157
0.49 145 4.111 -4 0.06 -70 0.30 -170
0.48 133 4.119 -17 0.06 -79 0.31 178
0.46 126 4.123 -24 0.07 -85 0.32 171
0.43 112 4.079 -37 0.07 -97 0.33 158
0.38 98 4.072 -51 0.07 -113 0.33 145
0.36 88 4.049 -59 0.07 -118 0.33 140
MITSUBISHI
ELECTRIC
18-Sep-'98
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