Mitsubishi MGF7176C Datasheet

PRELIMINARY

PIN CONFIGURATION (TOP VIEW)

Notice : This is not a final specification
Some parametric limits are subject to change.

DESCRIPTION

The MGF7176C is a monolithic microwave integrated

circuit for use in CDMA base handheld phone.

FEATURES

Low voltage operation : Vd=3.0V

High output power : Po=28dBm typ. @f=1.75~1.78GHz

Low distortion : ACP=-46dBc max.
@Po=28dBm,1.25MHz off-set.

High efficiency : Id=560mA typ. @Po=28dBm

Single voltage operation (NVG include)

Enable to Gain control

Surface mount package
3 Stage Amplifier with gain control

External matching circuit is required

3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

MGF7176C

GND

OUT

GND

VSS
VD_LEV
VT
GND
IN

APPLICATION

1.7GHz band handheld phone

QUALITY GRADE

GG

Block Diagram of this IC and Application Circuit Example.

Battery

Pout

VD3

Matching
circuit

Regulator

Negative voltage
generator

GND

VT

Matching
circuit

(7mmx6.1mmx1mm)

pin pitch 1.0mm

VDD2
VDD1

Pin

*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there
is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.

VGC

as of Feb.'98

MITSUBISHI
ELECTRIC

Test conditions

*1.Each maximum rating is guaranteed independently.

Gain

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

PRELIMINARY

Notice : This is not a final specification
Some parametric limits are subject to change.

ABSOLUTE MAXIMUM RATINGS (Ta=25 deg.C)

Symbol Parameter Ratings Unit
VD1,VD2,VD3 Supply voltage of HPA 5 V

3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER

MGF7176C

VD_NVG Supply voltage of NVG V
VD_LEV,VT,VGC Control voltage
Pin

Tstg

Input power
Operating case temperature
Storage temperature

5

4.5 V

-30 ~ +85Tc(op)

-30 ~ +100

ELECTRICAL CHARACTERISTICS (Ta=25 deg.C)

Symbol

f

Idt

Ga

Idle_Id Idle current

Parameter

frequency 1750 1780 MHz

Standard bias*,VGC=VT=3.0V,

Total drain current

Pout=28dBm
ACP<-46dBc (1.25MHz off-set.)

Standard bias*,VT=3.0V,VGC=0.0V,

Standard bias*,VGC=3V,VT=3V, for Po>10dBm
Standard bias*,VGC=3V,VT=2V, for Po<12dBm

dBm5
deg.C
deg.C

*Standard bias : VD1,VD2,VD3=3V
VD_NVG,VD_LEV=3V

Limits

MIN TYP MAX

Unit

–

560

–

28Standard bias*,VT=3.0V,VGC=3.0V,

18 dB

170

50

mA

–

dB

––

mA

––

Pout

Ig
2sp 2nd harmonics

rin input VSWR
ACP

Psp

Pnoise

–

–

*CDMA is code division multiple access. OQPSK is modulation method, off-set quadrature phase shift keying.
Electrical characteristics are changed by the external matching circuit.
Limits are guaranteed by using MITSUBISHI test fixture.

Note : Sampling inspection

Output power

Gate current

Adjacent channel leakage

Spurious level
Noise power in

1.84~1.87GHz band
Damage

with-standing

Note

Stability

Note

Standard bias*,VGC=VT=3V
CDMA modulated signal based on IS-9
5 STD.
(1.2288Mbps spreading,OQPSK)

Po=28dBm,1.2288MHz Spreading
@1.25MHz offset

Standard bias*,VGC=VT=3.0V
Standard bias*,VGC=VT=3.0V,

Resolution band width = 1MHz
Standard bias*,VGC=VT=3.0V,

Pin=0dBm, Load VSWR=10, All phase,
Time=10 sec

Standard bias*,VGC=VT=3.0V,
Pin=0dBm, Load VSWR=3:1, All phase

28

–
– –

–

5

– –
– –

– –

No damage

No oscillation
Spurious level≤-60dBc

3

-46– –

-57

-70– –

dBm

mA

dBc-30

–

dBc

dBm

dBm

as of Feb.'98

MITSUBISHI
ELECTRIC