Mitsubishi MGF7175C Datasheet
PRELIMINARY
PIN CONFIGURATION (TOP VIEW)
Notice : This is not a final specification
Some parametric limits are subject to change.
DESCRIPTION
The MGF7175C is a monolithic microwave integrated
circuit for use in CDMA base handheld phone.
FEATURES
Low voltage operation : Vd=3.0V
High output power : Po=28dBm typ. @f=1.85~1.91GHz
Low distortion : ACP=-46dBc max.
@Po=28dBm,1.25MHz off-set.
High efficiency : Id=560mA typ. @Po=28dBm
Single voltage operation (NVG include)
Enable to Gain control
Surface mount package
3 Stage Amplifier with gain control
External matching circuit is required
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGF7175C
GND
OUT
GND
VSS
VD_LEV
VT
GND
IN
APPLICATION
1.9GHz band handheld phone
QUALITY GRADE
GG
Block Diagram of this IC and Application Circuit Example.
Battery
Pout
VD3
Matching
circuit
Regulator
Negative voltage
generator
GND
VT
Matching
circuit
(7mmx6.1mmx1mm)
pin pitch 1.0mm
VDD2
VDD1
Pin
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there
is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
VGC
MITSUBISHI
ELECTRIC
as of Mar.'98
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
*1.Each maximum rating is guaranteed independently.
Test conditions
Gain
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg.C)
Symbol Parameter Ratings Unit
VD1,VD2,VD3 Supply voltage of HPA 5 V
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
MGF7175C
VD_NVG Supply voltage of NVG V
VT,VGC Control voltage
Pin
Tstg
Input power
Operating case temperature
Storage temperature
5
4.5
-30 ~ +85Tc(op)
-30 ~ +100
ELECTRICAL CHARACTERISTICS (Ta=25 deg.C)
Symbol
f
Idt
Ga
Idle_Id Idle current
Parameter
frequency
Total drain current
Standard bias*,VGC=VT=3.0V,
Pout=28dBm
ACP<-46dBc (1.25MHz off-set.)
Standard bias*,VT=3.0V,VGC=0.0V,
Standard bias*,VGC=3V,VT=3V, for Po>10dBm
Standard bias*,VGC=3V,VT=2V, for Po<12dBm
V
dBm5
deg.C
deg.C
*Standard bias : VD1,VD2,VD3=3V
VD_NVG,VD_LEV=3V
Limits
MIN TYP MAX
1850 1910
–
–
560
28Standard bias*,VT=3.0V,VGC=3.0V,
18 dB
170
50
Unit
MHz
mA
–
dB
––
mA
––
Pout
Ig
2sp 2nd harmonics
rin input VSWR
ACP
Psp
Pnoise
–
–
*CDMA is code division multiple access. OQPSK is modulation method, off-set quadrature phase shift keying.
Electrical characteristics are changed by the external matching circuit.
Limits are guaranteed by using MITSUBISHI test fixture.
Note : Sampling inspection
Output power
Gate current
Adjacent channel leakage
Spurious level
Noise power in
1.93~1.99GHz band
Damage
with-standing
Note
Stability
Note
Standard bias*,VGC=VT=3V
CDMA modulated signal based on IS-9
5 STD.
(1.2288Mbps spreading,OQPSK)
Po=28dBm,1.2288MHz Spreading
@1.25MHz offset
Standard bias*,VGC=VT=3.0V
Standard bias*,VGC=VT=3.0V,
Resolution band width = 1MHz
Standard bias*,VGC=VT=3.0V,
Pin=0dBm, Load VSWR=10, All phase,
Time=10 sec
Standard bias*,VGC=VT=3.0V,
Pin=0dBm, Load VSWR=3:1, All phase
MITSUBISHI
ELECTRIC
28
–
– –
–
5
– –
– –
– –
– –
– –
No damage
No oscillation
Spurious level≤-60dBc
3
-46
-57
-70
as of Mar.'98
dBm
mA
dBc-30
–
dBc
dBm
dBm
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