Aug. '97
Technical Note
MITSUBISHI ELECTRIC
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with
appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii)
prevention against any malfunction or mishap.
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
(1/16)
Specifications are subject to change without notice.
DESCRIPTION
The MGF7170AC is a monolithic microwave integrated
circuit for use in CDMA base handheld phone.
APPLICATION
1.9GHz band handheld phone
QUALITY GRADE
GG
FEATURES
-Low voltage operation :
Vd=3.0V
-High output power :
Po=28dBm typ. @f=1.715~1.78GHz
-Low distortion :
ACP=-46dBc max. @Po=28dBm
-High efficiency :
Id=520mA typ. @Po=28dBm
-Small size :
7.0 x 6.1 x 1.1 mm
Single voltage operation (NVG include)
Surface mount package
2 Stage Amplifier
External matching circuit is required
Block Diagram of this IC and Application Circuit Example.
Battery
Regulator
VD1
HPA
Pout
Matching
circuit
VD2
VDD2
VDD1
MGF7170AC
Pin
Matching
circuit
VSS
Negative voltage
generator
Pi
Po
Vd1
Vd2
Vg
GND
Ext
CASE
: RF input
: RF output
: Drain bias 1
: Drain bias 2
: Gate bias(positive bias)
: Connect to GND
: Connect to Capacitor
: Connect to GND
GND
Po / Vd2
Pi
GND
Vg
PIN CONFIGURATION
(TOP VIEW)
Vd1
Ext
GND
ES1:different pin configuration
MITSUBISHI ELECTRIC
Note : Sampling inspection
(2/16)
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg.C )
Symbol Parameter Ratings Unit
Vd1,Vd2 Drain supply voltage
6
V
-30 ~ +100
-30 ~ +85Tc(op)
Tstg
Operating case temperature
Storage temperature
Vg Gate supply voltage
4
V
Pi Input power dBm
15
*1.Each maximum rating is guaranteed independently.
deg.C
deg.C
ELECTRICAL CHARACTERISTICS (Ta=25 deg.C )
*CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying.
Electrical characteristics are changed by the external matching circuit.
Limits are guaranteed by using MITSUBISHI test fixture.
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Aug. '97
Preliminary
information
Symbol
Pout
Idt
Parameter
Output power
Total drain current
MIN TYP MAX
Unit
dBm
f
Test conditions
frequency
1715 1780 MHz
3
Limits
Ig
Gate current
mA
520
mA
dBc-302sp 2nd harmonics
rin input VSWR
Damage
with-standing
Stability
Vd1=Vd2=3.0V,
Pin=7dBm,
Load VSWR=10, All phase
Time=10 sec
No damage
No oscillation
Spurious level≤-60dBc
Vd1=Vd2=3.0V,
Pin=7dBm,
Load VSWR=3:1, All phase
Note
Note
28
–
Vd1=Vd2=3.0V,Vg=2.6V,
Pin=7dBm CDMA modulated signal
based on IS-95 STD.
(1.2288Mbps spreading,OQPSK)
ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
–
–
–
–
–
–
–
– –
– –
– –
480– –
450
– –
450– –
ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V
Idle_Id Idle current
––
––
mA
150
50
Vg=2.6V, Po=28dBm
Vg=2.9V, Po=12dBm
10
MITSUBISHI ELECTRIC
(3/16)
Aug. '97
Pin vs. Pout,Id for CDMA
Pin vs. Pout,Efficiency for CDMA
Fin=1750MHz
Vd1=Vd2=3.0V
Vg=2.6V
CDMA evaluation
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Preliminary
information
0
5
10
15
20
25
30
35
-12 -8 -4 0 4 8 12 16
Pin (dBm)
0
200
400
600
800
1000
1200
1400
Idt
Id2
Id1
Pout
0
5
10
15
20
25
30
35
-12 -8 -4 0 4 8 12 16
Pin (dBm)
0
10
20
30
40
50
60
70
Efficiency
Pout
Fin=1750MHz
Vd1=Vd2=3.0V
Vg=2.6V
CDMA evaluation
MITSUBISHI ELECTRIC
(4/16)
Aug '97
Pin vs.Pout,Gain for CDMA
Pin vs. Pout,ACPR for CDMA
Preliminary
information
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
0
5
10
15
20
25
30
35
-12 -8 -4 0 4 8 12 16
Pin (dBm)
0
5
10
15
20
25
30
35
Gain
Pout
0
5
10
15
20
25
30
35
-12 -8 -4 0 4 8 12 16
Pin (dBm)
-45
-35
-25
-15
-5
5
15
Pout
ACPR
Fin=1750MHz
Vd1=Vd2=3.0V
Vg=2.6V
CDMA evaluation
Fin=1750MHz
Vd1=Vd2=3.0V
Vg=2.6V
CDMA evaluation
MITSUBISHI ELECTRIC
(5/16)
Aug. '97
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Preliminary
information
Spectral Plot of CDMA
Harmonics
ACPR=-30.57dBc
2SP=-39.77dBc
3SP=-32.20dBc
Fin=1750MHz
Vd1=Vd2=3.0V
Vg=2.6V
Pout=28dBm
CDMA evaluation
MITSUBISHI ELECTRIC
(6/16)
Aug. '97
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Preliminary
information
Fin=1750MHz
Vg=2.6V
CDMA evaluation
Vd=2.6V
Vd=3.0V
Vd=3.4V
0
5
10
15
20
25
30
35
-12 -8 -4 0 4 8 12 16
Pin (dBm)
0
200
400
600
800
1000
1200
1400
Vd dependence of Pin vs.Pout,Idt
Vd dependence of Pin vs.Pout,Efficiency
0
5
10
15
20
25
30
35
-12 -8 -4 0 4 8 12 16
Pin (dBm)
0
10
20
30
40
50
60
70
Fin=1750MHz
Vg=2.6V
CDMA evaluation
Vd=2.6V
Vd=3.0V
Vd=3.4V
Pout
Idt
Pout
Efficiency
MITSUBISHI ELECTRIC
(7/16)
Aug. '97
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Preliminary
information
Vd dependence of Pin vs.Pout,Gain
Vd dependence of Pin vs.Pout,ACPR
0
5
10
15
20
25
30
35
-12 -8 -4 0 4 8 12 16
Pin (dBm)
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
-12 -8 -4 0 4 8 12 16
Pin (dBm)
-45
-35
-25
-15
-5
5
15
Fin=1750MHz
Vg=2.6V
CDMA evaluation
Vd=2.6V
Vd=3.0V
Vd=3.4V
Fin=1750MHz
Vg=2.6V
CDMA evaluation
Vd=2.6V
Vd=3.0V
Vd=3.4V
Pout
ACPR
Pout
Gain
MITSUBISHI ELECTRIC
(8/16)
Aug. '97
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Vd dependence of Fin vs. Gain,Idt
Vd dependence of Fin vs. Id1,Id2
15
20
25
30
1.710 1.730 1.750 1.770 1.790
Frequency (GHz)
0
200
400
600
0
50
100
150
1.71 1.73 1.75 1.77 1.79
Frequency (GHz)
0
200
400
600
Gain
Idt
Id2
Id1
Fin=1750MHz
Vg=2.6V
CDMA evaluation
Vd=2.6V
Vd=3.0V
Vd=3.4V
Fin=1750MHz
Vg=2.6V
CDMA evaluation
Vd=2.6V
Vd=3.0V
Vd=3.4V
Preliminary
information
MITSUBISHI ELECTRIC
(9/16)
Aug. '97
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
MGF7170AC
Preliminary
information
Vd dependence of Fin vs. Gain,Efficiency
Vd dependence of Fin vs. Gain,ACPR
20
25
30
35
1.710 1.730 1.750 1.770 1.790
Frequency (GHz)
20
30
40
50
10
15
20
25
1.71 1.73 1.75 1.77 1.79
Frequency (GHz)
-40
-30
-20
-10
Efficiency
Gain
Gain
ACPR
Fin=1750MHz
Vg=2.6V
CDMA evaluation
Vd=2.6V
Vd=3.0V
Vd=3.4V
Fin=1750MHz
Vg=2.6V
CDMA evaluation
Vd=2.6V
Vd=3.0V
Vd=3.4V
Equivalent Circuit of Test Board for CDMA(1.715-1.78GHz): ES1
MGF
7170
AC
l=2.0
w=1.0
l=11.0
w=1.0
l=5.5
w=1.0
2.0pF
2.5pF
Pin
l=2.0
w=2.2
l=13.5
w=0.5
l=11.0
w=1.0
5.0pF
8.0pF
Pout
Vd2
1000pF
Unit:mm
SUB. data
Er=4.8
H=600 um
Metal T=43 um
MITSUBISHI ELECTRIC
(10/16)
Aug. '97
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Preliminary
information
Test Circuit Board for CDMA(1.715-1.78GHz): ES1
SUB. data
ER=4.8
H=600um
Metal T=43um
40 x 60 mm
Pout
Pin
Vg
Vd1
Vd2
1000pF
1000pF
5.0pF
8.0pF
2.5pF
2.0pF
1000pF
1000pF
10Ohm
1000pF
45K Ohm
18K Ohm
10Ohm
MITSUBISHI ELECTRIC
(11/16)
Aug. '97
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Preliminary
information
MITSUBISHI ELECTRIC
(12/16)
Aug. '97
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Preliminary
information
Equivalent circuit of MGF7170AC with our test board
: MGF7170AC(Ceramic package)
: our test board(Er=4.8, t=0.6mm)
FET1
FET2
Pin Pout
VD1 VD2
Vg
Matching
circuits
ZI(TS) ZL(TS)
MITSUBISHI ELECTRIC
(13/16)
Aug. '97
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Preliminary
information
Input/Output Impedance (@1.715-1.78GHz) : ES1
ZI(ES1) = 8.7 - j18.3 (Ω) f=1.715GHz
8.6 - j16.5 (Ω) f=1.75GHz
8.5 - j15.0 (Ω) f=1.78GHz
ZL(ES1) = 3.8 - j1.1 (Ω) f=1.715GHz
3.5 - j0.4 (Ω) f=1.75GHz
3.3 + j 0.2(Ω) f=1.78GHz
Conditions;
Vd1=Vd2=3.0V
Vg=2.6V
Pout=28dBm
X
X
X
1.715GHz
1.75GHz
1.78GHz
Preliminary
information
OUTLINE DRAWING
Unit : mm
MITSUBISHI ELECTRIC
(14/16)
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Aug. '97
2 - (2.4)
6.1+/-0.2
5.2
0.3
0.3
1
2
3
4
5
6
8
7
4 - R0.2
Note1
4.1
8 - (4.9)
2 - (0.1)
8 - (0.5)
8 - (0.4)
Note1 : 1 pin mark
Note2 : The values without tolerance are typical.
Terminal Connection
6
RF IN (Pi)
GND
Vd1
Ext
Vg
8
7
GND
GND
RF OUT (Po) & Vd2
Case:GND
3
5
4
1
2
MITSUBISHI ELECTRIC
(15/16)
4.10
4.90
2.50
0.8
0.8
Unit:mm
Recommended Mount Pad
Aug. '97
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Preliminary
information
MITSUBISHI ELECTRIC
(16/16)
Recommended Temperature Profile
Aug. '97
MGF7170AC
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
UHF BAND GaAs POWER AMPLIFIER
Preliminary
information
1) Infrared Reflow and Air Reflow Temperature Profile
Time
Approx. 60sec
150 deg.C
1~4 deg.C/sec
max. 240 deg.C
max. 10sec
1~4 deg.C/sec
Notes 1) Temperature profile on package surface
2) Reflow process : Up to three times
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