Mitsubishi MGF7170C Datasheet

Aug. '97

Technical Note

MITSUBISHI ELECTRIC

*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with
appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii)
prevention against any malfunction or mishap.

MGF7170AC

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

UHF BAND GaAs POWER AMPLIFIER

(1/16)

Specifications are subject to change without notice.

DESCRIPTION
The MGF7170AC is a monolithic microwave integrated

circuit for use in CDMA base handheld phone.

APPLICATION

1.9GHz band handheld phone

QUALITY GRADE
GG

FEATURES

-Low voltage operation :

Vd=3.0V

-High output power :
Po=28dBm typ. @f=1.715~1.78GHz

-Low distortion :
ACP=-46dBc max. @Po=28dBm

-High efficiency :
Id=520mA typ. @Po=28dBm

-Small size :

7.0 x 6.1 x 1.1 mm
Single voltage operation (NVG include)
Surface mount package
2 Stage Amplifier
External matching circuit is required

Block Diagram of this IC and Application Circuit Example.

Battery

Regulator

VD1

HPA

Pout

Matching
circuit

VD2

VDD2
VDD1

MGF7170AC

Pin

Matching
circuit

VSS

Negative voltage
generator

Pi
Po
Vd1
Vd2
Vg
GND
Ext
CASE

: RF input
: RF output
: Drain bias 1
: Drain bias 2
: Gate bias(positive bias)
: Connect to GND
: Connect to Capacitor
: Connect to GND

GND

Po / Vd2

Pi

GND

Vg

PIN CONFIGURATION
(TOP VIEW)

Vd1

Ext

GND

ES1:different pin configuration

MITSUBISHI ELECTRIC

Note : Sampling inspection

(2/16)

ABSOLUTE MAXIMUM RATINGS (Ta=25 deg.C )

Symbol Parameter Ratings Unit
Vd1,Vd2 Drain supply voltage

6

V

-30 ~ +100

-30 ~ +85Tc(op)

Tstg

Operating case temperature
Storage temperature

Vg Gate supply voltage

4

V

Pi Input power dBm

15

*1.Each maximum rating is guaranteed independently.

deg.C
deg.C

ELECTRICAL CHARACTERISTICS (Ta=25 deg.C )

*CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying.
Electrical characteristics are changed by the external matching circuit.
Limits are guaranteed by using MITSUBISHI test fixture.

MGF7170AC

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

UHF BAND GaAs POWER AMPLIFIER

Aug. '97

Preliminary
information

Symbol

Pout

Idt

Parameter

Output power

Total drain current

MIN TYP MAX

Unit

dBm

f

Test conditions

frequency

1715 1780 MHz

3

Limits

Ig

Gate current

mA

520

mA

dBc-302sp 2nd harmonics

rin input VSWR

Damage
with-standing

Stability

Vd1=Vd2=3.0V,
Pin=7dBm,
Load VSWR=10, All phase
Time=10 sec

No damage

No oscillation
Spurious level≤-60dBc

Vd1=Vd2=3.0V,
Pin=7dBm,
Load VSWR=3:1, All phase

Note

Note

28

–

Vd1=Vd2=3.0V,Vg=2.6V,
Pin=7dBm CDMA modulated signal
based on IS-95 STD.
(1.2288Mbps spreading,OQPSK)

ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V

–

–

–

–

–

–

–

– –
– –
– –

480– –

450

– –

450– –

ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V

ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V

ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V

Idle_Id Idle current

––

––

mA

150

50

Vg=2.6V, Po=28dBm
Vg=2.9V, Po=12dBm

10

MITSUBISHI ELECTRIC

(3/16)

Aug. '97

Pin vs. Pout,Id for CDMA

Pin vs. Pout,Efficiency for CDMA

Fin=1750MHz

Vd1=Vd2=3.0V
Vg=2.6V
CDMA evaluation

MGF7170AC

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

UHF BAND GaAs POWER AMPLIFIER

Preliminary
information

0

5

10

15

20

25

30

35

-12 -8 -4 0 4 8 12 16
Pin (dBm)

0

200

400

600

800

1000

1200

1400

Idt

Id2

Id1

Pout

0

5

10

15

20

25

30

35

-12 -8 -4 0 4 8 12 16
Pin (dBm)

0

10

20

30

40

50

60

70

Efficiency

Pout

Fin=1750MHz

Vd1=Vd2=3.0V
Vg=2.6V
CDMA evaluation

MITSUBISHI ELECTRIC

(4/16)

Aug '97

Pin vs.Pout,Gain for CDMA

Pin vs. Pout,ACPR for CDMA

Preliminary
information

MGF7170AC

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

UHF BAND GaAs POWER AMPLIFIER

0

5

10

15

20

25

30

35

-12 -8 -4 0 4 8 12 16
Pin (dBm)

0

5

10

15

20

25

30

35

Gain

Pout

0

5

10

15

20

25

30

35

-12 -8 -4 0 4 8 12 16
Pin (dBm)

-45

-35

-25

-15

-5

5

15

Pout

ACPR

Fin=1750MHz

Vd1=Vd2=3.0V
Vg=2.6V
CDMA evaluation

Fin=1750MHz
Vd1=Vd2=3.0V

Vg=2.6V
CDMA evaluation

MITSUBISHI ELECTRIC

(5/16)

Aug. '97

MGF7170AC

MITSUBISHI SEMICONDUCTOR <GaAs MMIC>

UHF BAND GaAs POWER AMPLIFIER

Preliminary
information

Spectral Plot of CDMA

Harmonics

ACPR=-30.57dBc

2SP=-39.77dBc
3SP=-32.20dBc

Fin=1750MHz
Vd1=Vd2=3.0V
Vg=2.6V
Pout=28dBm
CDMA evaluation