Mitsubishi MGF7169C Datasheet
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
MGF7169C
Technical Note
Specifications are subject to change without notice.
DESCRIPTION
The MGF7169C is a monolithic microwave integrated
circuit for use in CDMA base handheld phone.
FEATURES
Low voltage operation :
Vd=3.0V
High output power :
Po=28dBm typ. @f=1.85~1.91GHz
Low distortion :
ACP=-46dBc max. @Po=28dBm
High efficiency :
Id=520mA typ. @Po=28dBm
Small size :
7.0 x 6.1 x 1.1 mm
Surface mount package
2 Stage Amplifier
External matching circuit is required
APPLICATION
1.9GHz band handheld phone
UHF BAND GaAs POWER AMPLIFIER
PIN CONFIGURATION
(TOP VIEW)
Pi
Vg1
Vd1
MC
Vg2
: RF input
Pi
: RF output
Po
: Drain bias 1
Vd1
: Drain bias 2
Vd2
: Gate bias
Vg
: Note1
MC
: Connect to GND
GND
: Connect to GND
CASE
GND
GND
Vd2 / Po
QUALITY GRADE
Note1:Connect to matching circuit
GG
Block Diagram of this IC and Application Circuit Example.
VDD
Regulator
Battery
VD1
VD2
Pout
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there
is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Matching
circuit
MGF7169C
HPA
VG1 VG2
Negative voltage
generator
Matching
circuit
Pin
MITSUBISHI ELECTRIC
(1/20)
Aug. '97
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
Preliminary
information
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
Symbol Parameter Ratings Unit
Vd1,Vd2
Vg
Pi
Tc(op)
Tstg
*1.Each maximum rating is guaranteed independently.
Drain supply voltage
Gate supply voltage
Input power dBm15
Operating case temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol
Parameter
6 V
-4 V
-30 ~ +85
-30 ~ +100
Test conditions
MGF7169C
UHF BAND GaAs POWER AMPLIFIER
˚C
˚C
Limits
MIN TYP MAX
Unit
f
Idt
Idle_Id Idle current
Pout
Ig Gate current
rin input VSWR
—
—
frequency
Total drain current
Output power
Damage
with-standing
Stability
Note
Note
ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V
ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V
Vg1=Vg2=-2.0V, Po=28dBm
Vg1=Vg2=-2.5V, Po=12dBm
Vd1=Vd2=3.0V,Vg1=Vg2=-2.0V,
Pin=7dBm CDMA modulated signal
based on IS-95 STD.
(1.2288Mbps spreading,OQPSK)
Vd1=Vd2=3.0V,
Pin=7dBm,
Load VSWR=10, All phase
Time=10 sec
Vd1=Vd2=3.0V,
Pin=7dBm,
Load VSWR=3:1, All phase
1850 1910 MHz
— —
— —
—
— —
—
— —
— —
— —
No oscillation
Spurious level≤-60dBc
—
450
480
520
450
150
50
28
No damage
—
——
——
—
3
mA
mA
dBm
mA-3
dBc-302sp 2nd harmonics
—
*CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying.
Electrical characteristics are changed by the external matching circuit.
Limits are guaranteed by using MITSUBISHI test fixture.
Note : Sampling inspection
MITSUBISHI ELECTRIC
(2/20)
Aug. '97
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
Preliminary
information
Pin vs. Pout,Id for CDMA
35
30
25
Pout
20
15
Pout (dBm)
10
5
0
-12 -8 -4 0 4 8 12 16
MGF7169C
UHF BAND GaAs POWER AMPLIFIER
1400
1200
1000
Idt
800
Id2
Id1
600
400
200
0
Id (mA)
Fin=1880MHz
Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
CDMA evaluation
Pin (dBm)
Pin vs. Pout,Efficiency for CDMA
35
30
25
20
15
Pout (dBm)
10
5
0
-12 -8 -4 0 4 8 12 16
Pout
Efficiency
Pin (dBm)
70
60
50
40
30
Efficiency (%)
20
10
0
Fin=1880MHz
Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
CDMA evaluation
MITSUBISHI ELECTRIC
(3/20)
Aug. '97
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
Preliminary
information
Pin vs.Pout,Gain for CDMA
35
30
Pout
25
20
15
Pout (dBm)
10
5
0
-12 -8 -4 0 4 8 12 16
MGF7169C
UHF BAND GaAs POWER AMPLIFIER
35
30
25
Gain
20
15
GAIN (dB)
10
Fin=1880MHz
5
0
Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
CDMA evaluation
Pin (dBm)
Pin vs. Pout,ACPR for CDMA
35
30
Pout
25
20
15
Pout (dBm)
10
5
0
-12 -8 -4 0 4 8 12 16
Pin (dBm)
ACPR
15
5
-5
-15
-25
-35
-45
-55
ACPR (dBc)
Fin=1880MHz
Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
CDMA evaluation
MITSUBISHI ELECTRIC
(4/20)
Aug '97
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
Preliminary
information
Spectral Plot of CDMA
ACPR=-32.31dBc
MGF7169C
UHF BAND GaAs POWER AMPLIFIER
Harmonics
2SP=-53.3dBc
3SP=-31.3dBc
Fin=1880MHz
Vd1=Vd2=3.0V
Vg1=Vg2=-2.0V
Pout=28dBm
CDMA evaluation
MITSUBISHI ELECTRIC
(5/20)
Aug. '97
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
Preliminary
information
Vd dependence of Pin vs.Pout,Idt
35
30
25
20
15
Pout (dBm)
10
5
0
-12 -8 -4 0 4 8 12 16
Pout
Idt
MGF7169C
UHF BAND GaAs POWER AMPLIFIER
1400
1200
1000
800
600
400
200
0
Id (mA)
Fin=1880MHz
Vg1=Vg2=-2.0V
CDMA evaluation
Vd=2.6V
Vd=3.0V
Vd=3.4V
Pin (dBm)
Vd dependence of Pin vs.Pout,Efficiency
35
30
25
20
15
Pout (dBm)
10
5
0
-12 -8 -4 0 4 8 12 16
Pout
Efficiency
70
60
50
40
30
Efficiency (%)
20
10
0
Vd=2.6V
Vd=3.0V
Vd=3.4V
Fin=1880MHz
Vg1=Vg2=-2.0V
CDMA evaluation
Pin (dBm)
MITSUBISHI ELECTRIC
(6/20)
Aug. '97
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