Mitsubishi MGF7124A Datasheet
MITSUBISHI SEMICONDUCTOR GaAs MMIC
Nov. ´97
Test conditions
(Note1)
ABSOLUTE MAXIMUM RATINGS
MGF7124A
1.9GHz BAND AMPLIFIER MMIC
DESCRIPTION
MGF7124A is a monolithic microwave integrated circuit for use in
1.9GHz band power amplifiers.
FEATURES
• High output power
PO=26dBm,π/4DQPSK
• Small size
5.8×12.2×1.8mm
• Light weight
• Surface mount package
• Low supply voltage operation
VD=4.8V
• Enable to control gain
VGdual=0/-4V
APPLICATION
Base-station of Japanese personal handyphone system(PHS)
QUALITY GRADE
• IG
OUTLINE DRAWING
1
Pi
2
VD1
3
NU
4
VD2
8.4
12.2
: RF INPUT
Pi
: 1st DRAIN BIAS
VD1
: 2nd DRAIN BIAS
VD2
: GND
GND
GC-3
VG1
VG2
VGdual
PO
Unit:millimeters
8
VG1
7
VGdual
6
VG2
5
Po
: 1st GATE BIAS
: 2nd GATE BIAS
: GAIN CONTROL
: RF OUTPUT
Symbol Parameter Ratings
VD1,VD2
VG1,VG2,
VGdual
ID1,ID2,ID3
Pi
TC(op)
Tstg
Drain voltage
Gate voltage
Drain current
Input power
Operating case temperature
Storage temperature
5.5
-5.5
500 mA
10
-20 to +90
-35 to +120
Unit
V
V
dBm
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol Unit
f
VD
GP
IDt
Gcon
Frequency
Drain supply voltage
Power gain
Total drain current
Gain control range
A.C.P
(±600kHz)
Adjacent channel power
A.C.P
(±900kHz)
Note1: ZS=ZL=50Ω,IDt-bias=ID1+ID2=280mA
Parameter
PO=26dBm,f=1.9GHz,π/4DQPSK
VGdual=0/-4V,PO=26dBm,f=1.9GHz
PO=26dBm,f(ACP)=±600kHz,
f=1.9GHz,π/4DQPSK
PO=26dBm,f(ACP)=±900kHz,
f=1.9GHz,π/4DQPSK
Min
1.89
4.8
21
–
20
–
–
Limits
Typ Max
–
5.0
–
300
–
–
–
1.92
5.2
–
–
–
-56
-62
GHz
V
dB
mA
dB
dBc
dBc
Loading...