MITSUBISHI MGF4961B User Manual
MITSUBISHI SEMICONDUTOR <GaAs FET>
without permission by Mitsubishi Elec
Trouble with semiconductors may lead to personal
Feb./2007
SUPER LOW NOISE InGaAs HEMT
MGF4961B
DESCRIPTION
The MGF4961B super-low noise HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
FEATURES
Low noise figure @ f=20GHz
NFmin. = 0.7dB (Typ.)
High associated gain @ f=20GHz
Gs = 13.5dB (Typ.)
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed
ORDERING INFORMATION
Tape & reel 4000pcs./reel
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
V
GDO
V
GSO
ID
PT Total power dissipation 50 mW
Tch
T
stg
Gate to drain voltage -4 V
Gate to source voltage -4 V
Drain current IDSS mA
Channel temperature 125 °C
Storage temperature -55 to +125 °C
(Ta=25°C )
Outline Drawing
4.0±0.2
(1.05)
②
1.02±0.1
GD-31
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
1.9±0.1
①
③
tric
0.5±0.1
(1.05)
(unit: mm)
(1.05)
4.0±0.2
②
(1.05) 1.9±0.1
① Gate
② Source
±0.05
0.125
1.19±0.2
③ Drain
ELECTRICAL CHARACTERISTICS
Synbol Parameter Test conditions
V
(BR)GDO
I
GSS
I
DSS
V
GS(off)
Gs
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Associated gain
Minimum noise figure
(Ta=25°C )
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
f=20GHz
MITSUBISHI
(1/4)
Limits Unit
MIN. TYP. MAX
-3 -- -- V
-- -- 50 µA
15 -- 60 mA
-0.1 -- -1.5 V
11.5 13.5 -- dB
-- 0.70 0.95 dB
MITSUBISHI SEMICONDUTOR <GaAs FET>
V
Feb./2007
SUPER LOW NOISE InGaAs HEMT
MGF4961B
TYPICAL CHARACTERISTICS
50
40
(mA)
D
I
30
20
10
=-0.1V/STEP
GS
ID vs. V
DRAIN CURRENT
0
0 1 2 3
Drain to Source voltage VDS(V)
1.6
VDS=2V
f =20GHz
1.4
1.2
, NF (dB)
1.0
0.8
NOISE FIGURE
0.6
0.4
0 5 10 15 20
NF
DRAIN CURRENT, ID (mA)
DS
NF & Gs vs. I
Gs
(Ta=25°C)
D
16
14
12
10
8
6
4
ID vs. V
50
VDS=2V
40
(mA)
D
30
20
10
DRAIN CURRENT, I
0
-1.0 -0.5 0.0
Gate to Source voltage, VGS(V)
Gs(dB)
ASSOCIATED GAIN,
GS
MITSUBISHI
(2/4)
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