MITSUBISHI MGF4953B User Manual

< Low Noise GaAs HEMT >

MGF4953B

Leadless ceramic package

DESCRIPTION

The MGF4953B super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.

FEATURES

Low noise figure @ f=20GHz

NFmin. = 0.55dB (Typ.)

High associated gain @ f=20GHz

Gs = 10.5dB (Typ.)

APPLICATION

C to K band low noise amplifiers

QUALITY GRADE

GG

RECOMMENDED BIAS CONDITIONS

VDS=2V , ID=10mA

MITSUBISHI Proprietary

Not to be reproduced or disclosed without
permission by Mitsubishi Electric

ORDERING INFORMATION

Tape & reel 10,000pcs/reel (MGF4953B-01)
Tape & reel 10,000pcs/reel (MGF4953B-70)

RoHS COMPLIANT

MGF4953B is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Ratings Unit

V

GDO

V

GSO

ID

PT Total power dissipation 50 mW

Tch

T

stg

Gate to drain voltage -3 V
Gate to source voltage -3 V
Drain current 60 mA

Channel temperature 125 C
Storage temperature -55 to +125 C

ELECTRICAL CHARACTERISTICS

Symbol Parameter Test conditions Limits Unit

MIN. TYP. MAX

V

V

NFmin. Minimum noise figure

Note: Gs and NFmin. are tested with sampling inspection.

(BR)GDO

I
I

GS(off)

Gate to drain breakdown voltage
Gate to source leakage current

GSS

Saturated drain current

DSS

Gate to source cut-off voltage

Gs Associated gain

(Ta=25C )

IG=-10A
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500A
VDS=2V,
ID=10mA,f=20GHz

(Ta=25C )

Outline Drawing

Fig.1

-3 -- -- V

-- -- 50 A

15 -- 60 mA

-0.1 -- -1.5 V

9.0 10.5 -- dB

-- 0.55 0.80 dB

Publication Date : Apr., 2011

1

< Low Noise GaAs HEMT >







MGF4953B

Leadless ceramic package

Fig.1

Top

+0.20

2.15

-0.10

A

②

①

0

0

2

1

.

.

0

0

+

-

5
1

.
2

J 5
6 E G

②

③



Side

0.20±0.1

0.80±0.1

2-R0.275

2-R0.20

①

②

Bottom

)

2

0

.

1

(

-

2

2

-

0

.

2

-

(

2

②

.

2

0

1

.

)

2

0

±

0

.

0

5

5

0

.

③

5

0

±

0

.

0

5

0

±

5

5

.

0

-

4

(0.30)

(2.30)

from "A" side view

Square shape electrode is Drain

Unit: mm

① Gate
② Source
③ Drain

Publication Date : Apr., 2011

2

< Low Noise GaAs HEMT >

)

MGF4953B

Leadless ceramic package

TYPICAL CHARACTERISTICS

50

40

Ta=25

=-0.1V /STEP

V

GS

(mA)

D

I

30

20

Drain Current

10

0

0123

Drain to Sourc e voltage VDS(V)

DRAIN TO SOURCE VOLTAGE VDS (V)

1.3

Ta=25

1.2

1.1

1.0

0.9

NF (dB)

0.8

0.7

雑音指数

0.6

0.5

0.4

=2V

V

DS

f=20GHz

0 5 10 15 20

℃

℃

ID vs. V

DS

NF & G s VS. I

ドレイン電流

ID (mA )

Gs

NF

D

(Ta=25°C)

13

12

11

10

9

8

7

6

5

4

ID VS. V

50

Ta=25

℃

=2V

V

DS

40

(mA)

D

I

30

20

Drain Current

10

0

-1.00 -0.50 0.00

Gate to Source voltage VGS(V)

GATE TO SOURCE VOLTAGE VGS (V)

雑音最小電力利得 Gs (dB)

GS

Publication Date : Apr., 2011

DRAIN CURRENT ID (mA

3

< Low Noise GaAs HEMT >



MGF4953B

Leadless ceramic package

S PARAMETERS

Freq.

(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)

1 0.989 -4.0 5.212 166.6 0.038 82.4 0.689 -10.7
2 0.968 -20.4 5.101 152.0 0.046 72.4 0.669 -21.1
3 0.942 -36.8 4.989 137.3 0.054 62.4 0.640 -31.5
4 0.927 -53.2 4.877 122.7 0.062 52.4 0.604 -41.9
5 0.857 -69.5 4.766 108.0 0.070 42.4 0.554 -52.4
6 0.787 -85.8 4.655 93.4 0.078 32.4 0.505 -62.7
7 0.716 -101.5 4.524 79.3 0.085 23.5 0.454 -72.7
8 0.654 -119.2 4.378 64.9 0.093 13.5 0.399 -84.1

9 0.582 -135.3 4.162 52.0 0.095 4.9 0.341 -93.6
10 0.525 -152.8 4.008 39.5 0.095 -2.5 0.288 -102.8
11 0.494 -170.2 3.887 27.3 0.096 -8.4 0.250 -113.0
12 0.474 171.2 3.761 15.2 0.096 -14.2 0.212 -124.7
13 0.471 152.0 3.656 2.9 0.097 -20.6 0.180 -140.4
14 0.484 134.6 3.593 -9.4 0.096 -26.0 0.159 -156.4
15 0.501 118.4 3.522 -21.9 0.095 -33.2 0.155 -175.5
16 0.544 101.2 3.335 -36.1 0.098 -37.5 0.163 153.3
17 0.579 86.8 3.209 -49.3 0.099 -42.9 0.182 132.4
18 0.612 73.6 3.038 -62.7 0.101 -49.3 0.216 110.1
19 0.646 62.0 2.814 -73.7 0.102 -56.2 0.260 90.7
20 0.688 50.3 2.726 -85.1 0.107 -63.9 0.301 76.3
21 0.733 39.4 2.613 -96.7 0.112 -75.1 0.340 59.0
22 0.765 28.6 2.499 -108.3 0.115 -86.3 0.370 48.0
23 0.798 17.7 2.384 -120.0 0.119 -97.5 0.405 37.0
24 0.831 6.9 2.269 -131.6 0.123 -108.7 0.444 30.2
25 0.831 -3.9 2.152 -143.2 0.127 -119.9 0.483 23.1
26 0.814 -14.7 2.034 -154.8 0.131 -131.1 0.522 17.1

NOISE PARAMETERS

(VDS=2V,ID=10mA, Ta=25C)

S22S11 S21 S12

(VDS=2V, ID=10mA, Ta=25C)

Freq. NFmin Rn

(GHz) (dB) (mag) (ang) (Ω)

12 0.38 0.44 140.9 2.5
13 0.40 0.40 160.3 1.5
14 0.43 0.38 -179.4 2.0
15 0.45 0.36 -158.4 2.0
16 0.48 0.36 -136.6 3.0
17 0.50 0.36 -114.2 4.0
18 0.53 0.38 -91.2 6.0
19 0.57 0.39 -67.9 8.5
20 0.63 0.41 -44.5 11.5
21 0.72 0.45 -21.1 15.0
22 0.80 0.48 2.1 19.0
23 0.92 0.54 25.2 24.0
24 1.00 0.57 48.1 29.5
25 1.14 0.61 70.9 37.5
26 1.24 0.63 93.6 50.0

opt

Measurement plane (2.2mm)

Board; RO4003C (Rogers Corp.)
r=3.38, t=0.508mm, Au (Cu) =0.035mm

Note:

We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales

offices.

Publication Date : Apr., 2011

4

< Low Noise GaAs HEMT >

MGF4953B

Leadless ceramic package

S PARAMETERS

Freq. S22

(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)

1 0.989 -13.0 4.537 165.8 0.014 78.9 0.637 -9.7
2 0.973 -25.9 4.502 152.9 0.028 71.8 0.629 -19.6
3 0.949 -38.7 4.472 140.4 0.041 62.7 0.621 -29.2
4 0.926 -52.0 4.460 127.3 0.054 53.2 0.608 -39.0
5 0.890 -64.9 4.431 114.9 0.066 44.4 0.592 -48.2
6 0.828 -81.1 4.394 99.8 0.076 33.4 0.539 -60.1
7 0.776 -95.6 4.311 86.3 0.085 24.1 0.505 -70.2
8 0.723 -110.6 4.230 73.2 0.093 15.2 0.469 -80.4

9 0.662 -126.6 4.094 59.9 0.099 5.4 0.423 -90.7
10 0.605 -142.6 3.943 47.4 0.102 -4.0 0.368 -100.2
11 0.551 -158.2 3.826 35.4 0.102 -12.9 0.318 -108.8
12 0.514 -174.5 3.740 23.7 0.100 -19.7 0.279 -116.3
13 0.488 167.0 3.622 11.2 0.099 -28.1 0.232 -126.2
14 0.486 149.0 3.572 -1.1 0.098 -32.1 0.203 -138.3
15 0.480 131.8 3.512 -12.6 0.094 -38.4 0.169 -148.1
16 0.509 113.0 3.425 -26.2 0.099 -43.0 0.148 -175.1
17 0.536 95.1 3.349 -39.1 0.099 -49.9 0.133 157.1
18 0.569 78.2 3.226 -52.1 0.100 -58.5 0.132 120.7
19 0.609 62.7 3.091 -66.1 0.099 -66.5 0.160 92.2
20 0.642 47.3 2.934 -79.2 0.096 -75.2 0.204 67.8
21 0.674 34.3 2.752 -91.8 0.091 -83.8 0.250 50.6
22 0.707 21.1 2.617 -104.8 0.089 -92.5 0.293 37.0
23 0.742 9.2 2.471 -117.4 0.082 -102.8 0.350 23.8
24 0.753 -2.2 2.307 -130.2 0.081 -111.9 0.390 13.5
25 0.775 -12.5 2.139 -142.4 0.072 -118.9 0.430 2.4
26 0.803 -22.5 2.008 -155.0 0.069 -135.9 0.474 -5.7

(VDS=2V,ID=10mA, Ta=25C)

S11 S21 S12

NOISE PARAMETERS (VDS=2V,ID=10mA, Ta=25C)

opt

Freq. Rn NFmin

(GHz) (mag) (ang) (dB)

18 0.358 -137.2 0.12 0.51
20 0.372 -91.0 0.14 0.55
22 0.390 -47.7 0.63 0.77
24 0.417 -14.9 1.05 1.05
26 0.473 10.5 1.26 1.25

Note) Rn is normalized by 50ohm

Note:

We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales

offices.



Board: r=2.6
Thickness=0.4mm

HEMT mount

Gate

4-φ0.4

0.65

Reference Point Reference Point 2.2mm

1.20

Drain

1.0mm

Publication Date : Apr., 2011

5

< Low Noise GaAs HEMT >

MGF4953B

Leadless ceramic package

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Publication Date : Apr., 2011

6