MITSUBISHI MGF4953B User Manual
< Low Noise GaAs HEMT >
MGF4953B
Leadless ceramic package
DESCRIPTION
The MGF4953B super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
FEATURES
Low noise figure @ f=20GHz
NFmin. = 0.55dB (Typ.)
High associated gain @ f=20GHz
Gs = 10.5dB (Typ.)
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 10,000pcs/reel (MGF4953B-01)
Tape & reel 10,000pcs/reel (MGF4953B-70)
RoHS COMPLIANT
MGF4953B is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
V
GDO
V
GSO
ID
PT Total power dissipation 50 mW
Tch
T
stg
Gate to drain voltage -3 V
Gate to source voltage -3 V
Drain current 60 mA
Channel temperature 125 C
Storage temperature -55 to +125 C
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions Limits Unit
MIN. TYP. MAX
V
V
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
(BR)GDO
I
I
GS(off)
Gate to drain breakdown voltage
Gate to source leakage current
GSS
Saturated drain current
DSS
Gate to source cut-off voltage
Gs Associated gain
(Ta=25C )
IG=-10A
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500A
VDS=2V,
ID=10mA,f=20GHz
(Ta=25C )
Outline Drawing
Fig.1
-3 -- -- V
-- -- 50 A
15 -- 60 mA
-0.1 -- -1.5 V
9.0 10.5 -- dB
-- 0.55 0.80 dB
Publication Date : Apr., 2011
1
< Low Noise GaAs HEMT >
MGF4953B
Leadless ceramic package
Fig.1
Top
+0.20
2.15
-0.10
A
②
①
0
0
2
1
.
.
0
0
+
-
5
1
.
2
J 5
6 E G
②
③
Side
0.20±0.1
0.80±0.1
2-R0.275
2-R0.20
①
②
Bottom
)
2
0
.
1
(
-
2
2
-
0
.
2
-
(
2
②
.
2
0
1
.
)
2
0
±
0
.
0
5
5
0
.
③
5
0
±
0
.
0
5
0
±
5
5
.
0
-
4
(0.30)
(2.30)
from "A" side view
Square shape electrode is Drain
Unit: mm
① Gate
② Source
③ Drain
Publication Date : Apr., 2011
2
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