MITSUBISHI MGF4951A, MGF4952A User Manual
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4951A/MGF4952A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4951A/MGF4952A super-low noise HEMT (High
Electron Mobility Transistor) is designed for use in C to K band
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
FEATURES
Low noise figure @ f=12GHz
MGF4951A : NFmin. = 0.40dB (Typ.)
MGF4952A : NFmin. = 0.60dB (Typ.)
High associated gain @ f=12GHz
Gs = 12.0dB (Typ.)
APPLICATION
C to K band low noise amplifiers
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel 3000pcs./reel
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
V
GDO
V
GSO
ID
PT Total power dissipation 50 mW
Tch
T
stg
Gate to drain voltage -4 V
Gate to source voltage -4 V
Drain current 60 mA
Channel temperature 125 °C
Storage temperature -65 to +125 °C
(Ta=25°C )
Outline Drawing
Fig.1
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
Synbol Parameter Test conditions Limits Unit
MIN. TYP. MAX
V
(BR)GDO
V
NFmin.
I
GSS
I
DSS
GS(off)
gm
Gs
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
(Ta=25°C )
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
VDS=2V,
ID=10mA
f=12GHz
-3 -- -- V
-- -- 50 µA
15 -- 60 mA
-0.1 -- -1.5 V
-- 70 -- mS
11.0 12.0 -- dB
MGF4951A
MGF4952A
-- 0.40 0.50 dB
-- 0.60 0.80 dB
MITSUBISHI
(1/5)
June/2004
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4951A/MGF4952A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
Fig.1
Unit : mm
1 Gate
2 Source
3 Drain
MITSUBISHI
(2/5)
June/2004
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