MITSUBISHI Proprietary
< Low Noise GaAs HEMT >
MGF4941AL
Micro-X type plastic package
DESCRIPTION
The MGF4941AL super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in Ku band amplifiers.
FEATURES
Low noise figure @ f=12GHz
NFmin. = 0.35dB (Typ.)
High associated gain @ f=12GHz
Gs = 13.5dB (Typ.)
APPLICATION
L to K band low noise amplifiers
Outline Drawing
Fig.1
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
=2V, ID=10mA
V
DS
ORDERRING INFORMATION
Tape & reel 4000pcs./reel
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RoHS COMPLIANT
MGF4941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
V
GDO
V
GSO
ID
PT Total power dissipation 50 mW
Tch
T
stg
Gate to drain voltage -3 V
Gate to source voltage -3 V
Drain current IDSS mA
Channel temperature 125 °C
Storage temperature -55 to +125 °C
(Ta=25°C )
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)GDO
I
I
V
GS(off)
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
Gate to drain breakdown voltage
Gate to source leakage current
GSS
Saturated drain current
DSS
Gate to source cut-off voltage
Gs Associated gain
Parameter Test conditions
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,
ID=10mA,f=12GHz
(Ta=25°C )
Limits Unit
MIN. TYP. MAX
-3 -- -- V
-- -- 50 µA
15 -- 60 mA
-0.1 -- -1.5 V
12.0 13.5 -- dB
-- 0.35 0.5 dB
Publication Date : Apr., 2011
1
<Low Noise GaAs HEMT>
A
MGF4941AL
Micro-X type plastic package
Fig.1
①
3.2±0.1
2.6±0.1(0.30)
0.5±0.1
(0.30)
Bottom
(2.3)
(0.30)
Top
②
rAA
②
0.65±0.1
3.2±0.1
2.6±0.1
(2.3)
(0.30)
③
2.2±0.1
1.7±0.1
Unit : mm
Side
0.15±0.05
1.35±0.2
① Gate
② Source
③ Drain
(GD-32)
Publication Date : Apr., 2011
2
<Low Noise GaAs HEMT>
V
V
MGF4941AL
Micro-X type plastic package
TYPICAL CHARACTERISTICS
Ta=25°C)
(
50
40
(mA )
D
I
30
20
=-0.1V /STEP
GS
ID vs. V
DS
ID vs. V
50
VDS=2V
40
(mA)
D
30
20
GS
10
DRAIN CURRENT
0
0 1 2 3
Drain to Sourc e voltage VDS(V)
1.2
1.0
=2V
DS
f=12GHz
NF & Gs vs. I
D
16
14
Gs
10
DRAIN CURRENT, I
0
-1.0 -0.5 0.0
Gate to Source voltage, VGS(V)
0.8
12
0.6
10
0.4
NOISE FIGURE, NF (dB )
NF
8
ASSOCIAT ED GAIN, Gs (dB)
0.2
0 5 10 15 20
DRAIN CURRE NT, ID (m A )
6
Publication Date : Apr., 2011
3
<Low Noise GaAs HEMT>
(GHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
18
0.643
73.3
2.620
-65.9
0.153
-26.4
0.317
106.1
Freq.
NFmin
Rn
(GHz)
(dB)
(mag)
(ang)
(Ω)
18
0.72
0.66
-47.0
8.7
Γ
MGF4941AL
Micro-X type plastic package
S PARAMETERS
Freq.
1 0.997 -18.3 5.603 158.4 0.023 73.4 0.702 -11.1
2 0.976 -30.0 5.399 145.6 0.033 67.2 0.668 -20.1
3 0.944 -41.7 5.195 132.7 0.043 61.0 0.634 -29.1
4 0.880 -53.4 4.991 119.8 0.053 54.8 0.600 -38.1
5 0.804 -67.6 4.874 105.3 0.064 46.8 0.563 -47.6
6 0.728 -82.3 4.743 90.7 0.074 39.0 0.519 -57.2
7 0.640 -98.0 4.569 76.0 0.082 31.0 0.467 -66.6
8 0.563 -116.4 4.389 61.2 0.091 22.3 0.406 -77.4
9 0.476 -134.2 4.123 47.5 0.095 15.2 0.343 -86.1
10 0.408 -153.5 3.898 34.7 0.095 9.9 0.285 -94.4
11 0.381 -174.5 3.736 22.2 0.101 5.8 0.245 -105.3
12 0.370 163.2 3.559 9.8 0.105 1.9 0.203 -119.0
13 0.385 141.3 3.391 -2.6 0.110 -3.1 0.167 -137.9
14 0.415 124.1 3.275 -14.2 0.113 -5.8 0.156 -157.0
15 0.458 109.1 3.148 -26.2 0.117 -10.7 0.153 178.7
16 0.529 94.8 2.961 -40.7 0.131 -15.1 0.214 144.7
17 0.586 83.3 2.817 -53.4 0.142 -19.9 0.257 125.9
Noise Parameter
Note
1 0.18 0.96 -32.8 17.0
2 0.19 0.93 -17.9 15.5
3 0.19 0.90 -3.0 14.0
4 0.20 0.84 11.9 12.5
5 0.23 0.79 26.8 11.0
6 0.24 0.74 41.7 9.5
7 0.26 0.65 56.6 8.0
8 0.29 0.53 73.6 6.0
9 0.31 0.44 92.6 4.5
10 0.34 0.34 113.6 3.5
11 0.37 0.28 136.5 2.5
12 0.40 0.25 161.2 2.5
13 0.45 0.25 -172.3 2.5
14 0.50 0.27 -144.2 3.0
15 0.55 0.33 -122.0 4.0
16 0.61 0.44 -97.0 5.6
17 0.66 0.55 -73.0 7.0
:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
(VDS=2V,ID=10mA,Ta=room temperature)
(VDS=2V,ID=10mA, Ta=room temperature)
opt
S22S11 S21 S12
Measurement plane (2.6mm)
Recommended foot pattern;
RO4003C/Rogers (εr=3.38, t=0.508mm)
offices.
Publication Date : Apr., 2011
4
<Low Noise GaAs HEMT>
Freq.
rn
NFmin
(GHz)
(mag)
(ang)
(dB)
22
0.467
-42.7
0.180
0.96
Γ
opt
MGF4941AL
Micro-X type plastic package
S PARAMETERS
(VDS=2V,ID=10mA,Ta=room temperature)
Freq. S22
(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
1 0.989 -13.9 5.497 164.6 0.017 78.9 0.637 -10.6
2 0.967 -28.2 5.416 149.6 0.028 70.9 0.626 -21.1
3 0.929 -41.5 5.278 135.0 0.040 61.7 0.610 -31.1
4 0.882 -54.4 5.172 121.5 0.051 53.3 0.586 -40.5
5 0.822 -65.9 4.932 108.0 0.061 45.9 0.572 -50.8
6 0.757 -79.5 4.959 94.1 0.071 37.6 0.538 -60.3
7 0.686 -93.3 4.826 80.4 0.080 29.9 0.502 -69.8
8 0.611 -108.8 4.732 66.8 0.086 22.7 0.456 -78.6
9 0.533 -125.1 4.587 53.6 0.092 16.2 0.408 -86.5
10 0.463 -143.6 4.403 40.5 0.096 10.2 0.359 -93.8
11 0.411 -164.1 4.140 27.8 0.100 4.8 0.311 -100.7
12 0.382 174.7 4.010 15.6 0.105 0.1 0.267 -108.9
13 0.378 152.3 3.782 3.3 0.111 -4.7 0.221 -119.3
14 0.395 131.4 3.653 -9.1 0.115 -9.7 0.182 -135.4
15 0.435 113.6 3.514 -21.3 0.121 -14.6 0.152 -157.0
16 0.486 99.0 3.366 -32.9 0.126 -19.8 0.134 177.7
17 0.543 86.2 3.172 -45.3 0.133 -25.5 0.139 145.4
18 0.603 73.7 3.049 -57.7 0.140 -31.2 0.183 115.8
19 0.663 61.2 2.877 -70.2 0.147 -37.9 0.251 95.1
20 0.704 50.1 2.641 -81.3 0.152 -45.0 0.309 80.2
21 0.746 40.5 2.470 -91.5 0.156 -52.4 0.363 70.0
22 0.778 32.3 2.311 -102.3 0.156 -58.0 0.411 59.8
S11 S21 S12
NOISE PARAMETERS
2 0.671 13.9 0.370 0.20
4 0.598 37.2 0.262 0.22
6 0.537 60.8 0.197 0.25
8 0.474 86.2 0.155 0.29
10 0.399 119.2 0.102 0.32
12 0.329 147.6 0.062 0.35
14 0.299 173.6 0.069 0.40
16 0.349 -143.9 0.083 0.49
18 0.392 -106.5 0.109 0.59
20 0.432 -73.0 0.146 0.73
Note: rn is normarised by 50 ohm.
(VDS=2V,ID=10mA, Ta=25°C)
Board: εr=2.2
Thickness: 0.25mm
(4-φ0.3: through-hole)
Reference
(Unit: mm)
2.60
Reference
0.74
(1.0mm)
1.30
Note
:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
2.08
Publication Date : Apr., 2011
5
<Low Noise GaAs HEMT>
our sales offices.
MGF4941AL
Micro-X type plastic package
S PARAMETERS
(VDS=0V,VGS=0V,Ta=room temperature)
(V
Freq. S22
(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
1 0.996 -12.6 0.008 90.7 0.008 93.1 0.700 167.0
2 0.998 -25.4 0.019 92.4 0.019 92.2 0.696 154.5
3 0.988 -38.1 0.032 90.0 0.032 90.6 0.703 142.2
4 0.984 -50.8 0.048 86.4 0.048 86.3 0.708 129.1
5 0.971 -62.6 0.068 80.5 0.069 81.0 0.710 117.1
6 0.963 -77.1 0.092 72.6 0.092 72.7 0.718 104.8
7 0.949 -92.8 0.119 62.9 0.120 62.9 0.730 92.6
8 0.936 -110.9 0.149 51.8 0.150 52.2 0.739 81.3
9 0.915 -131.2 0.181 39.2 0.182 39.5 0.750 70.7
10 0.892 -153.9 0.211 25.5 0.211 25.9 0.760 60.8
11 0.878 -178.2 0.235 10.8 0.237 11.1 0.769 51.6
12 0.870 157.5 0.252 -3.9 0.252 -3.9 0.785 42.8
13 0.868 133.9 0.258 -18.6 0.259 -18.6 0.795 34.7
14 0.875 113.0 0.257 -32.0 0.257 -32.0 0.805 26.9
15 0.883 94.9 0.250 -44.4 0.249 -44.1 0.815 19.2
16 0.895 79.7 0.238 -55.0 0.238 -54.9 0.824 11.6
17 0.901 66.6 0.225 -64.2 0.225 -64.0 0.833 5.2
18 0.912 54.7 0.213 -72.0 0.215 -71.8 0.845 0.1
19 0.923 43.8 0.205 -78.8 0.205 -78.7 0.856 -3.7
20 0.934 34.0 0.201 -85.1 0.202 -85.5 0.861 -8.4
21 0.947 25.0 0.195 -92.1 0.193 -92.7 0.859 -13.1
22 0.945 17.6 0.188 -98.3 0.188 -98.5 0.854 -18.2
DS
=0V,VGS=-2.5V,Ta=room temperature)
Freq. S22
(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
1 1.003 -8.2 0.022 80.5 0.023 79.5 0.998 -9.2
2 0.998 -16.7 0.045 72.1 0.045 71.9 0.990 -18.6
3 0.994 -24.6 0.067 62.9 0.067 63.2 0.995 -27.7
4 0.991 -32.2 0.088 54.8 0.089 54.7 0.993 -36.7
5 0.986 -38.9 0.109 46.3 0.110 46.5 0.993 -46.8
6 0.983 -46.7 0.133 37.4 0.132 37.5 0.985 -56.3
7 0.977 -54.4 0.157 28.6 0.158 28.7 0.982 -65.6
8 0.972 -63.3 0.183 18.8 0.184 18.6 0.970 -75.4
9 0.963 -72.7 0.211 8.3 0.210 8.5 0.962 -85.2
10 0.950 -83.2 0.237 -2.6 0.238 -2.7 0.956 -95.5
11 0.938 -94.7 0.263 -14.9 0.264 -14.8 0.945 -106.4
12 0.929 -107.7 0.289 -27.8 0.289 -27.8 0.932 -118.6
13 0.916 -121.9 0.310 -42.3 0.312 -42.2 0.921 -132.8
14 0.911 -137.5 0.326 -58.6 0.327 -58.7 0.914 -149.6
15 0.904 -155.7 0.324 -76.7 0.325 -76.6 0.909 -167.8
16 0.903 -175.3 0.305 -95.2 0.306 -95.4 0.911 173.5
17 0.910 163.6 0.269 -114.1 0.271 -114.4 0.916 153.5
18 0.914 142.1 0.219 -131.5 0.220 -131.6 0.924 133.0
19 0.912 121.4 0.172 -145.0 0.172 -144.9 0.926 114.9
20 0.927 103.4 0.136 -160.1 0.136 -160.2 0.939 99.3
21 0.955 87.0 0.089 -178.2 0.090 -176.6 0.961 84.2
22 0.971 72.1 0.048 167.9 0.049 171.4 0.968 69.8
S11 S21 S12
S11 S21 S12
Note: We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact
Publication Date : Apr., 2011
6
<Low Noise GaAs HEMT>
MGF4941AL
Micro-X type plastic package
•
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Notes regarding these materials
Publication Date : Apr., 2011
7
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