MITSUBISHI MGF4941AL User Manual
< Low Noise GaAs HEMT >
MGF4941AL
Micro-X type plastic package
DESCRIPTION |
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The MGF4941AL super-low noise InGaAs HEMT (High Electron Mobility |
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Transistor) is designed for use in Ku band amplifiers. |
Outline Drawing |
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FEATURES |
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Low noise figure |
@ f=12GHz |
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NFmin. = 0.35dB (Typ.) |
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High associated gain |
@ f=12GHz |
Fig.1 |
Gs = 13.5dB (Typ.) |
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APPLICATION
L to K band low noise amplifiers
QUALITY GRADE
MITSUBISHI Proprietary
GG
Not to be reproduced or disclosed without permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=2V, ID=10mA
ORDERRING INFORMATION
Tape & reel 4000pcs./reel
RoHS COMPLIANT
MGF4941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS |
(Ta=25°C ) |
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Symbol |
Parameter |
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Ratings |
Unit |
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VGDO |
Gate to drain voltage |
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-3 |
V |
VGSO |
Gate to source voltage |
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-3 |
V |
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ID |
Drain current |
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IDSS |
mA |
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PT |
Total power dissipation |
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50 |
mW |
Tch |
Channel temperature |
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125 |
°C |
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Tstg |
Storage temperature |
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-55 to +125 |
°C |
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ELECTRICAL CHARACTERISTICS |
(Ta=25°C ) |
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Symbol |
Parameter |
Test conditions |
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Limits |
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Unit |
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MIN. |
TYP. |
MAX |
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V(BR)GDO |
Gate to drain breakdown voltage |
IG=-10 A |
-3 |
-- |
-- |
V |
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IGSS |
Gate to source leakage current |
VGS=-2V,VDS=0V |
-- |
-- |
50 |
A |
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IDSS |
Saturated drain current |
VGS=0V,VDS=2V |
15 |
-- |
60 |
mA |
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VGS(off) |
Gate to source cut-off voltage |
VDS=2V,ID=500 A |
-0.1 |
-- |
-1.5 |
V |
Gs |
Associated gain |
VDS=2V, |
12.0 |
13.5 |
-- |
dB |
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ID=10mA,f=12GHz |
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NFmin. |
Minimum noise figure |
-- |
0.35 |
0.5 |
dB |
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Note: Gs and NFmin. are tested with sampling inspection.
Publication Date : Apr., 2011
1
<Low Noise GaAs HEMT>
MGF4941AL
Micro-X type plastic package
Fig.1 |
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3.2±0.1 |
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(0.30) |
2.6±0.1 |
(0.30) |
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Bottom |
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0.5±0.1 |
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Top |
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(2.3) |
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(0.30) |
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A |
0.65±0.1 |
2.6±0.1 |
3.2±0.1 |
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(2.3) |
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rAA |
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(0.30) |
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2.2±0.1 |
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Unit : mm |
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1.7±0.1 |
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Side |
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0.15±0.05 |
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1.35±0.2 |
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Gate |
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Source |
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Drain |
(GD-32)
Publication Date : Apr., 2011
2
<Low Noise GaAs HEMT>
MGF4941AL
Micro-X type plastic package
TYPICAL CHARACTERISTICS (Ta=25°C)
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ID vs. VDS |
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ID vs. VGS |
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50 |
VGS=-0.1V/STEP |
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50 |
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VDS=2V |
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(mA)ID |
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(mA)D |
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40 |
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40 |
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CURRENT |
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I |
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30 |
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CURRENT, |
30 |
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DRAIN |
20 |
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DRAIN |
20 |
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10 |
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10 |
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0 |
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0 |
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0 |
1 |
2 |
3 |
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-1.0 |
-0.5 |
0.0 |
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Drain to Source voltage |
VDS(V) |
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Gate to Source voltage, VGS(V) |
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NF & Gs vs. ID |
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1.2 |
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16 |
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VDS=2V |
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(dB) |
1.0 |
f=12GHz |
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14 |
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DB) |
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Gs |
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NF |
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( |
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GS |
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NOISE FIGURE, |
0.8 |
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12 |
ASSOC IAT ED GAIN , |
0.6 |
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10 |
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0.4 |
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NF |
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8 |
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0.2 |
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6 |
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0 |
5 |
10 |
15 |
20 |
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DRAIN CURRENT, ID (mA)
Publication Date : Apr., 2011
3
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