MITSUBISHI MGF4941AL User Manual
MITSUBISHI Proprietary
< Low Noise GaAs HEMT >
MGF4941AL
Micro-X type plastic package
DESCRIPTION
The MGF4941AL super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in Ku band amplifiers.
FEATURES
Low noise figure @ f=12GHz
NFmin. = 0.35dB (Typ.)
High associated gain @ f=12GHz
Gs = 13.5dB (Typ.)
APPLICATION
L to K band low noise amplifiers
Outline Drawing
Fig.1
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
=2V, ID=10mA
V
DS
ORDERRING INFORMATION
Tape & reel 4000pcs./reel
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RoHS COMPLIANT
MGF4941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
V
GDO
V
GSO
ID
PT Total power dissipation 50 mW
Tch
T
stg
Gate to drain voltage -3 V
Gate to source voltage -3 V
Drain current IDSS mA
Channel temperature 125 °C
Storage temperature -55 to +125 °C
(Ta=25°C )
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)GDO
I
I
V
GS(off)
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
Gate to drain breakdown voltage
Gate to source leakage current
GSS
Saturated drain current
DSS
Gate to source cut-off voltage
Gs Associated gain
Parameter Test conditions
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,
ID=10mA,f=12GHz
(Ta=25°C )
Limits Unit
MIN. TYP. MAX
-3 -- -- V
-- -- 50 µA
15 -- 60 mA
-0.1 -- -1.5 V
12.0 13.5 -- dB
-- 0.35 0.5 dB
Publication Date : Apr., 2011
1
<Low Noise GaAs HEMT>
A
MGF4941AL
Micro-X type plastic package
Fig.1
①
3.2±0.1
2.6±0.1(0.30)
0.5±0.1
(0.30)
Bottom
(2.3)
(0.30)
Top
②
rAA
②
0.65±0.1
3.2±0.1
2.6±0.1
(2.3)
(0.30)
③
2.2±0.1
1.7±0.1
Unit : mm
Side
0.15±0.05
1.35±0.2
① Gate
② Source
③ Drain
(GD-32)
Publication Date : Apr., 2011
2
<Low Noise GaAs HEMT>
V
V
MGF4941AL
Micro-X type plastic package
TYPICAL CHARACTERISTICS
Ta=25°C)
(
50
40
(mA )
D
I
30
20
=-0.1V /STEP
GS
ID vs. V
DS
ID vs. V
50
VDS=2V
40
(mA)
D
30
20
GS
10
DRAIN CURRENT
0
0 1 2 3
Drain to Sourc e voltage VDS(V)
1.2
1.0
=2V
DS
f=12GHz
NF & Gs vs. I
D
16
14
Gs
10
DRAIN CURRENT, I
0
-1.0 -0.5 0.0
Gate to Source voltage, VGS(V)
0.8
12
0.6
10
0.4
NOISE FIGURE, NF (dB )
NF
8
ASSOCIAT ED GAIN, Gs (dB)
0.2
0 5 10 15 20
DRAIN CURRE NT, ID (m A )
6
Publication Date : Apr., 2011
3
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