MITSUBISHI MGF4935AM User Manual

MITSUBISHI Proprietary

< Low Noise GaAs HEMT >

MGF4935AM

4pin flat lead package

DESCRIPTION

The MGF4935AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.

FEATURES

Low noise figure @ f=12GHz

NFmin. = 0.45dB (Typ.)

High associated gain @ f=12GHz

Gs = 12.0dB (Typ.)

APPLICATION

S to Ku band low noise amplifiers

QUALITY GRADE

GG

RECOMMENDED BIAS CONDITIONS

VDS=2V , ID=10mA

Not to be reproduced or disclosed without
permission by Mitsubishi Electric

ORDERING INFORMATION

Tape & reel 15000pcs/reel

RoHS COMPLIANT

MGF4935AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Ratings Unit

V

GDO

V

GSO

ID

PT Total power dissipation 50 mW

Tch

T

stg

Gate to drain voltage -3 V

Gate to source voltage -3 V

Drain current IDSS mA

Channel temperature 125 °C

Storage temperature -55 to +125 °C

(Ta=25°C )

ELECTRICAL CHARACTERISTICS

Symbol

V

(BR)GDO

I

I

V

GS(off)

NFmin. Minimum noise figure

Note: Gs and NFmin. are tested with sampling inspection.

Gate to drain breakdown voltage

Gate to source leakage current

GSS

Saturated drain current

DSS

Gate to source cut-off voltage

Gs Associated gain

Parameter Test conditions

IG=-10µA

VGS=-2V,VDS=0V

VGS=0V,VDS=2V

VDS=2V,ID=500µA

VDS=2V,

ID=10mA,f=12GHz

(Ta=25°C )

Outline Drawing

Fig.1

Limits Unit

MIN. TYP. MAX

-3.5 -- -- V

-- -- 50 µA

12 -- 60 mA

-0.1 -- -1.5 V

11.0 12.0 -- dB

-- 0.45 0.65 dB

Publication Date : Apr., 2011

1

< Low Noise GaAs HEMT >

MGF4935AM

4pin flat lead package

Fig.1

Top

0.30

±0.1

±0.1

+0.1

-0.05

(0.65)

②

2.10

1.30

1.30

±0.1

±0.05

(0.65)

(0.65)

①

0.30

+0.1

-0.05

E □

2.05

1.25

0.40

+0.1

-0.05

③

(0.60)

(0.60)

1.25

1.25

(0.65)

±0.05

②

0.30

+0.1

-0.05

+0.05

-0

0.11

±0.05

0.49

Side

Bottom

③

②

②

①

Unit: mm

(0.85)

① Gate
② Source
③ Drain

(GD-30)

Publication Date : Apr., 2011

2

< Low Noise GaAs HEMT >

V

MGF4935AM

4pin flat lead package

TYPICAL CHARACTERISTICS

50

40

(mA )

D

30

20

Drain Current, I

10

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

Nois e Figure, NF (dB)

0.4

0.2

0.0

IIII

DDDD

vs. V

vs. V

vs. V vs. V

0

0 1 2 3 4

Drain to Sourc e voltage, VDS(V)

NF & Gs vs. I

NF & Gs vs. I

NF & Gs vs. INF & Gs vs. I

Ta=25

=2V

DS

f=12GHz

0 5 10 15 20

DS

DS

IIII

DSDS

DDDD

℃

Drain c urrent, ID (m A )

(Ta=25°C)

15

14

13

12

11

10

9

8

7

6

5

4

DDDD

vs. V

vs. V

vs. V vs. V

50

40

(mA )

D

30

20

Drain Current, I

10

0

-1.0 -0 .5 0.0

Gate to Souc e voltage, VGS(V)

Associated Gain, Gs (dB)

GS

GS

GSGS

(VDS=2V) (VGS=~0.1V/STEP)

Publication Date : Apr., 2011

3

< Low Noise GaAs HEMT >

No

te:

MGF4935AM

4pin flat lead package

S PARAMETERS

Freq. S22

(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)

1 0.990 -13.4 4.592 164.5 0.013 80.2 0.669 -10.6
2 0.964 -26.9 4.545 149.2 0.027 71.6 0.658 -21.3
3 0.923 -40.6 4.476 134.3 0.039 62.7 0.636 -31.2
4 0.866 -54.5 4.463 119.5 0.051 54.6 0.603 -41.8
5 0.804 -68.1 4.370 105.1 0.061 46.8 0.569 -51.7
6 0.734 -82.3 4.241 91.0 0.069 39.3 0.529 -61.1
7 0.659 -96.5 4.113 77.4 0.076 33.2 0.488 -69.7
8 0.582 -111.0 3.965 64.0 0.082 28.2 0.446 -77.6

9 0.507 -126.1 3.804 51.4 0.086 24.0 0.404 -84.9
10 0.438 -142.0 3.660 38.9 0.091 20.9 0.368 -91.9
11 0.381 -158.6 3.548 26.9 0.097 19.0 0.338 -99.5
12 0.340 -178.7 3.440 14.7 0.106 16.9 0.320 -109.4
13 0.319 158.0 3.355 2.2 0.118 13.2 0.303 -120.9
14 0.327 133.9 3.276 -10.8 0.131 8.5 0.300 -137.1
15 0.370 112.0 3.191 -24.0 0.146 2.8 0.307 -157.2
16 0.440 93.2 3.080 -37.9 0.159 -4.2 0.327 179.4
17 0.520 78.4 2.914 -51.9 0.173 -11.5 0.369 157.8
18 0.601 64.0 2.690 -66.0 0.183 -19.4 0.419 137.5
19 0.672 50.4 2.405 -78.6 0.190 -27.1 0.472 122.4
20 0.737 38.9 2.146 -88.9 0.195 -34.2 0.510 110.5
21 0.800 30.7 1.931 -99.1 0.197 -42.0 0.548 98.5
22 0.847 27.2 1.738 -108.8 0.196 -49.0 0.582 83.9
23 0.886 25.8 1.574 -118.1 0.195 -55.9 0.619 68.2
24 0.920 23.1 1.459 -127.4 0.193 -61.4 0.652 52.9
25 0.948 16.5 1.382 -137.6 0.202 -67.4 0.693 40.5
26 0.954 3.1 1.332 -150.9 0.213 -77.2 0.730 31.4

Noise Parameter

We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales

offices.

Fr eq. NFmin Rn

(GHz) (dB) (mag) (ang) (Ω )

1 0.20 0.99 3.1 18.0
2 0.20 0.98 8.3 16.5
3 0.21 0.98 14.9 15.0
4 0.22 0.97 20.4 13.5
5 0.24 0.95 30.4 12.0
6 0.26 0.90 41.5 10.5
7 0.29 0.83 52.7 9.0
8 0.31 0.71 68.0 7.0

9 0.34 0.60 83.3 5.5
10 0.37 0.50 99.7 4.0
11 0.40 0.41 117.8 3.0
12 0.44 0.33 137.8 2.5
13 0.47 0.27 162.0 2.5
14 0.51 0.24 -178.1 2.5

Not e ; Rn is normalized by 50 ohm .

(VDS=2V,ID=10mA,Ta=room temperature)

S12S11 S21

(VDS=2V,ID=10mA, Ta=room temperature)

opt

Γ

Reference point

Gate

2.5mm

Board: εr=2.6

Thickness: 0.4mm

(4-

φ

0.4: through-hole)

Reference point

Drain

0.96

45ﾟ

Publication Date : Apr., 2011

4

< Low Noise GaAs HEMT >

Freq.

S22

(GHz)

(mag)

(ang)

(mag)

(ang)

(mag)

(ang)

(mag)

(ang)

22

0.942

10.5

0.193

-94.8

0.193

-94.7

0.749

-0.3

26

0.951

-10.3

0.151

-117.4

0.149

-118.2

0.789

-36.1

22

0.970

29.8

0.143

-40.0

0.143

-39.8

0.951

76.5

26

0.960

2.8

0.168

-75.8

0.168

-75.4

0.990

24.2

Note:

MGF4935AM

4pin flat lead package

S PARAMETERS

10 0.896 -155.7 0.235 32.2 0.237 32.2 0.725 67.5
11 0.881 -179.8 0.269 17.4 0.269 17.5 0.732 59.1
12 0.865 154.3 0.292 2.2 0.294 2.2 0.739 51.4
13 0.863 127.9 0.306 -13.3 0.307 -13.6 0.747 44.3
14 0.873 103.1 0.306 -28.4 0.307 -28.4 0.751 36.9
15 0.885 82.6 0.294 -41.6 0.295 -41.5 0.755 29.4
16 0.901 66.1 0.280 -52.6 0.280 -52.5 0.764 22.4
17 0.912 52.7 0.264 -61.5 0.265 -61.5 0.768 16.4
18 0.922 40.6 0.252 -69.0 0.252 -69.0 0.778 12.5
19 0.926 28.9 0.242 -76.7 0.242 -76.8 0.784 11.1
20 0.933 19.0 0.224 -84.1 0.225 -83.9 0.777 10.0
21 0.941 12.3 0.210 -89.8 0.210 -89.2 0.761 6.6

23 0.943 10.3 0.176 -100.3 0.175 -100.9 0.743 -9.5
24 0.958 9.3 0.163 -103.8 0.163 -103.9 0.755 -19.4
25 0.970 3.2 0.158 -109.2 0.157 -109.0 0.781 -28.9

(VDS=0V,VGS=-2V,Ta=room temperature)

Freq. S22

(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)

10 0.942 -104.7 0.216 -17.7 0.216 -17.8 0.950 -101.6
11 0.938 -119.1 0.221 -32.2 0.220 -32.3 0.942 -114.0
12 0.934 -136.1 0.217 -47.7 0.218 -47.8 0.942 -127.8
13 0.928 -156.1 0.201 -65.7 0.201 -65.7 0.934 -143.2
14 0.935 -178.9 0.170 -85.7 0.169 -85.7 0.941 -161.1
15 0.939 155.9 0.119 -107.4 0.119 -107.2 0.945 179.1
16 0.943 130.2 0.057 -127.3 0.057 -127.6 0.954 158.6
17 0.949 105.8 0.005 -25.0 0.005 -27.7 0.963 139.9
18 0.952 83.3 0.051 6.5 0.050 7.1 0.970 123.7
19 0.957 63.4 0.086 -4.4 0.086 -4.4 0.978 112.1
20 0.963 46.8 0.115 -16.6 0.115 -16.8 0.976 101.9
21 0.972 35.0 0.133 -29.5 0.132 -28.8 0.961 90.3

(VDS=0V,VGS=0V,Ta=room temperature)

S11 S21 S12

1 0.999 -11.6 0.008 97.0 0.008 96.6 0.648 168.2
2 0.996 -24.0 0.018 98.4 0.018 100.0 0.648 156.5
3 0.990 -36.5 0.032 97.9 0.032 98.7 0.652 144.6
4 0.988 -50.0 0.050 94.7 0.050 94.7 0.664 133.1
5 0.981 -64.3 0.073 87.6 0.074 87.8 0.674 121.4
6 0.972 -79.2 0.099 79.4 0.100 79.7 0.682 109.6
7 0.958 -95.5 0.130 69.2 0.130 69.1 0.693 97.9
8 0.944 -113.8 0.165 58.0 0.165 58.2 0.706 87.1
9 0.918 -133.8 0.200 45.6 0.200 45.8 0.717 76.9

S21 S12S11

1 0.997 -9.0 0.022 81.0 0.023 79.7 0.997 -9.9
2 0.997 -18.1 0.045 70.6 0.045 70.6 0.995 -19.8
3 0.997 -27.7 0.068 60.4 0.068 61.1 0.993 -29.2
4 0.993 -37.3 0.092 50.9 0.092 50.6 0.987 -39.0
5 0.988 -47.1 0.116 40.8 0.116 40.9 0.980 -49.4
6 0.985 -57.4 0.139 30.9 0.139 30.6 0.979 -59.2
7 0.972 -68.0 0.162 19.9 0.162 19.8 0.974 -69.1
8 0.973 -79.2 0.184 8.1 0.185 8.1 0.966 -79.5
9 0.956 -91.8 0.201 -4.1 0.202 -4.2 0.957 -89.9

23 0.967 27.0 0.145 -49.6 0.147 -49.5 0.941 61.2
24 0.974 24.0 0.149 -56.9 0.149 -57.0 0.953 46.5
25 0.983 17.1 0.159 -64.6 0.159 -64.7 0.974 33.8

We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales

offices.

Publication Date : Apr., 2011

5

< Low Noise GaAs HEMT >

MGF4935AM

4pin flat lead package

•

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Publication Date : Apr., 2011

6