MITSUBISHI MGF4935AM User Manual
MITSUBISHI Proprietary
< Low Noise GaAs HEMT >
MGF4935AM
4pin flat lead package
DESCRIPTION
The MGF4935AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
FEATURES
Low noise figure @ f=12GHz
NFmin. = 0.45dB (Typ.)
High associated gain @ f=12GHz
Gs = 12.0dB (Typ.)
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 15000pcs/reel
RoHS COMPLIANT
MGF4935AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
V
GDO
V
GSO
ID
PT Total power dissipation 50 mW
Tch
T
stg
Gate to drain voltage -3 V
Gate to source voltage -3 V
Drain current IDSS mA
Channel temperature 125 °C
Storage temperature -55 to +125 °C
(Ta=25°C )
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)GDO
I
I
V
GS(off)
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
Gate to drain breakdown voltage
Gate to source leakage current
GSS
Saturated drain current
DSS
Gate to source cut-off voltage
Gs Associated gain
Parameter Test conditions
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,
ID=10mA,f=12GHz
(Ta=25°C )
Outline Drawing
Fig.1
Limits Unit
MIN. TYP. MAX
-3.5 -- -- V
-- -- 50 µA
12 -- 60 mA
-0.1 -- -1.5 V
11.0 12.0 -- dB
-- 0.45 0.65 dB
Publication Date : Apr., 2011
1
< Low Noise GaAs HEMT >
MGF4935AM
4pin flat lead package
Fig.1
Top
0.30
±0.1
±0.1
+0.1
-0.05
(0.65)
②
2.10
1.30
1.30
±0.1
±0.05
(0.65)
(0.65)
①
0.30
+0.1
-0.05
E □
2.05
1.25
0.40
+0.1
-0.05
③
(0.60)
(0.60)
1.25
1.25
(0.65)
±0.05
②
0.30
+0.1
-0.05
+0.05
-0
0.11
±0.05
0.49
Side
Bottom
③
②
②
①
Unit: mm
(0.85)
① Gate
② Source
③ Drain
(GD-30)
Publication Date : Apr., 2011
2
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