< Low Noise GaAs HEMT >
MGF4934CM
4pin flat lead package
DESCRIPTION
The MGF4934CM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
FEATURES
Low noise figure @ f=12GHz
NFmin. = 0.50dB (Typ.)
High associated gain @ f=12GHz
Gs = 13.0dB (Typ.)
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
ORDERING INFORMATION
General part number: MGF4934CM-75
Tape & reel 15000pcs/reel
RoHS COMPLIANT
MGF4934CM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
V
GDO
V
GSO
ID
PT Total power dissipation 50 mW
Tch
T
stg
Gate to drain voltage -3 V
Gate to source voltage -3 V
Drain current IDSS mA
Channel temperature 125 C
Storage temperature -55 to +125 C
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions Limits Unit
MIN. TYP. MAX
V
V
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
(BR)GDO
I
I
GS(off)
Gate to drain breakdown voltage
Gate to source leakage current
GSS
Saturated drain current
DSS
Gate to source cut-off voltage
Gs Associated gain
(Ta=25C )
IG=-10A
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500A
VDS=2V,
ID=10mA,f=12GHz
(Ta=25C )
Outline Drawing
Fig.1
-3.5 -- -- V
-- -- 50 A
12 -- 60 mA
-0.1 -- -1.5 V
11.5 13.0 -- dB
-- 0.50 0.75 dB
Publication Date : Apr., 2011
1
< Low Noise GaAs HEMT >
MGF4934CM
4pin flat lead package
Fig.1
Top
0.30
±0.1
±0.1
+0.1
-0.05
(0.65)
②
2.10
1.30
1.30
±0.1
±0.05
(0.65)
(0.65)
①
0.30
+0.1
-0.05
D □
2.05
1.25
0.40
+0.1
-0.05
③
(0.60)
(0.60)
1.25
1.25
(0.65)
±0.05
②
0.30
+0.1
-0.05
±0.05
0.49
0.11
+0.05
-0
Side
Bottom
③
②
②
①
(0.85)
Unit: mm
① Gate
② Source
③ Drain
(GD-30)
Publication Date : Apr., 2011
2
< Low Noise GaAs HEMT >
MGF4934CM
4pin flat lead package
TYPICAL CHARACTERISTICS
50
40
30
20
10
Drain Current, ID (mA)
0
-1 -0.5 0
Gate to Source Voltage, V
2.20
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
Noise Figure, NF (dB)
0.40
0.20
0.00
Ta =2 5 ℃
VDS=2V
Freq=12GHz
0 5 10 15 20
ID vs. VDS ID vs. VGS
GS=~0.1V/STEP)
(V
NF & Gs vs. ID
Gs
NF
Drain Current, ID (mA)
(Ta=25°C)
GS (V)
50
40
30
20
10
Drain Current, ID (mA)
0
01234
Drain to Source Voltage, V
15
14
13
12
11
10
9
8
7
Associated Gain, Gs (dB)
6
5
4
(VDS=2V)
DS (V)
Publication Date : Apr., 2011
3
< Low Noise GaAs HEMT >
MGF4934CM
4pin flat lead package
S PARAMETERS
Freq.
(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
1 0.997 -24.9 5.499 155.2 0.031 68.3 0.750 -15.2
2 0.981 -38.3 5.255 141.5 0.037 60.1 0.720 -26.2
3 0.931 -51.7 5.010 127.8 0.043 51.9 0.690 -37.2
4 0.881 -65.1 4.766 114.1 0.049 43.6 0.660 -48.2
5 0.819 -81.5 4.601 98.8 0.057 33.5 0.627 -59.6
6 0.760 -97.5 4.434 83.8 0.062 24.4 0.591 -70.7
7 0.697 -114.1 4.249 68.9 0.065 15.0 0.551 -81.5
8 0.646 -131.5 4.070 54.1 0.070 5.7 0.509 -92.9
9 0.585 -147.6 3.864 40.6 0.068 -2.3 0.467 -102.5
10 0.538 -163.8 3.709 27.4 0.062 -7.5 0.435 -111.8
11 0.516 179.9 3.612 14.5 0.062 -8.9 0.417 -121.6
12 0.498 162.7 3.521 1.4 0.062 -10.4 0.400 -132.4
13 0.491 144.8 3.445 -11.9 0.064 -13.5 0.387 -144.3
14 0.497 128.1 3.424 -25.3 0.064 -13.9 0.392 -155.9
15 0.513 111.8 3.385 -39.3 0.067 -18.8 0.396 -169.8
16 0.547 94.1 3.227 -55.4 0.079 -23.6 0.415 167.7
17 0.579 78.4 3.136 -70.5 0.085 -30.0 0.427 150.4
18 0.611 64.3 2.976 -85.4 0.093 -38.3 0.441 129.8
Noise Parameter
Freq. NFmin Rn
(GHz) (dB) (mag) (ang) (Ω)
1 0.20 0.98 -8.9 16.5
2 0.21 0.95 5.3 15.0
3 0.22 0.89 19.5 13.5
4 0.24 0.82 33.7 12.1
5 0.26 0.76 47.9 10.6
6 0.28 0.69 62.1 9.1
7 0.32 0.63 76.3 7.6
8 0.34 0.56 91.5 6.2
9 0.37 0.50 107.8 4.6
10 0.42 0.45 125.1 3.1
11 0.47 0.41 143.3 2.6
12 0.51 0.38 162.5 2.0
13 0.56 0.35 -177.3 2.0
14 0.61 0.35 -156.2 2.4
15 0.65 0.36 -134.2 3.3
16 0.69 0.39 -111.1 4.8
17 0.74 0.43 -88.1 6.2
18 0.79 0.46 -65.0 7.7
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
(VDS=2V,ID=10mA,Ta=room temperature)
(VDS=2V,ID=10mA, Ta=room temperature)
opt
S22S11 S21 S12
Measurement plane (2.5mm)
Recommended foot pattern;
RO4003C/Rogers (r=3.38, t=0.508mm)
Publication Date : Apr., 2011
4
< Low Noise GaAs HEMT >
MGF4934CM
4pin flat lead package
S PARAMETERS
(VDS=2V,ID=10mA,Ta=room temperature)
Noise Parameter
(VDS=2V,ID=10mA, Ta=room temperature))
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Freq.
(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
1 0.990 -16.3 5.156 158.7 0.032 79.5 0.758 -9.2
2 0.985 -30.1 4.971 145.3 0.037 70.2 0.728 -19.5
3 0.930 -43.8 4.787 131.9 0.042 60.9 0.698 -29.9
4 0.860 -57.5 4.602 118.5 0.047 51.6 0.668 -40.3
5 0.802 -72.1 4.470 103.9 0.055 43.4 0.634 -50.0
6 0.737 -87.3 4.343 89.3 0.061 36.2 0.594 -59.5
7 0.668 -103.2 4.212 74.6 0.066 29.7 0.555 -68.9
8 0.599 -119.6 4.042 60.2 0.070 24.0 0.514 -78.3
9 0.533 -136.5 3.852 46.4 0.072 18.9 0.473 -87.3
10 0.477 -152.0 3.672 33.9 0.072 17.3 0.440 -95.2
11 0.442 -168.0 3.537 21.6 0.076 17.1 0.418 -104.2
12 0.421 175.7 3.429 9.5 0.083 17.2 0.400 -114.1
13 0.406 159.0 3.331 -2.4 0.090 15.9 0.383 -124.4
14 0.405 142.8 3.264 -14.1 0.099 14.1 0.375 -135.6
15 0.425 126.5 3.236 -26.9 0.115 10.1 0.379 -150.3
16 0.460 110.8 3.214 -40.8 0.137 5.3 0.403 -168.9
17 0.503 94.9 3.149 -54.5 0.156 -2.2 0.417 172.6
18 0.547 80.2 3.058 -68.3 0.175 -11.2 0.448 153.5
opt
Freq. NFmin Rn
(GHz) (dB) (mag) (ang) (Ω)
1 0.25 0.97 8.2 17.5
2 0.25 0.97 14.5 15.4
3 0.26 0.94 22.9 14.0
4 0.29 0.91 30.2 12.5
5 0.30 0.88 40.2 11.0
6 0.32 0.82 48.2 9.5
7 0.35 0.74 61.2 8.0
8 0.37 0.65 75.5 6.5
9 0.39 0.57 91.3 5.0
10 0.42 0.49 108.4 3.6
11 0.46 0.44 127.0 2.6
12 0.49 0.39 146.9 1.9
13 0.53 0.34 168.2 1.8
14 0.57 0.30 -169.1 2.0
Reference point
Gate
S22S11 S21 S12
2.5mm
Board: r=2.6
Thickness: 0.4mm
(4-φ0.4: through-hole)
Reference point
Drain
0.96
45ﾟ
Publication Date : Apr., 2011
5
< Low Noise GaAs HEMT >
MGF4934CM
4pin flat lead package
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Notes regarding these materials
Publication Date : Apr., 2011
6
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