< Low Noise GaAs HEMT >
MGF4934BM
4pin flat lead package
DESCRIPTION
The MGF4934BM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
FEATURES
Low noise figure @ f=12GHz
NFmin. = 0.50dB (Typ.)
High associated gain @ f=12GHz
Gs = 12.5dB (Typ.)
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
ORDERING INFORMATION
General part number: MGF4934BM-75
Tape & reel 15000pcs/reel
RoHS COMPLIANT
MGF4934BM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
V
GDO
V
GSO
ID
PT Total power dissipation 50 mW
Tch
T
stg
Gate to drain voltage -3 V
Gate to source voltage -3 V
Drain current IDSS mA
Channel temperature 125 C
Storage temperature -55 to +125 C
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions Limits Unit
MIN. TYP. MAX
V
V
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
(BR)GDO
I
I
GS(off)
Gate to drain breakdown voltage
Gate to source leakage current
GSS
Saturated drain current
DSS
Gate to source cut-off voltage
Gs Associated gain
(Ta=25C )
IG=-10A
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500A
VDS=2V,
ID=10mA,f=12GHz
(Ta=25C )
Outline Drawing
Fig.1
-3.5 -- -- V
-- -- 50 A
12 -- 60 mA
-0.1 -- -1.5 V
11.5 12.5 -- dB
-- 0.50 0.80 dB
Publication Date : Apr., 2011
1
< Low Noise GaAs HEMT >
MGF4934BM
4pin flat lead package
Fig.1
Top
0.30
±0.1
±0.1
+0.1
-0.05
(0.65)
②
2.10
1.30
1.30
±0.1
±0.05
(0.65)
(0.65)
①
0.30
+0.1
-0.05
B □
2.05
1.25
0.40
+0.1
-0.05
③
(0.60)
(0.60)
1.25
1.25
(0.65)
±0.05
②
0.30
+0.1
-0.05
±0.05
0.49
0.11
+0.05
-0
Side
Bottom
③
②
②
①
(0.85)
Unit: mm
① Gate
② Source
③ Drain
(GD-30)
Publication Date : Apr., 2011
2
< Low Noise GaAs HEMT >
MGF4934BM
4pin flat lead package
TYPICAL CHARACTERISTICS
50
40
(mA)
D
30
20
Drain Current, I
10
0
01234
2.2
Ta=25
2.0
VDS=2V
1.8
f=12GHz
1.6
1.4
1.2
1.0
0.8
0.6
Noise Figure, NF (dB)
0.4
0.2
0.0
0 5 10 15 20
ID vs. VDS ID vs. VGS
GS=~0.1V/STEP)
(V
Drain to Source voltage, VDS(V)
NF & Gs vs. ID
℃
Gs
NF
Drain Current, ID (mA)
(Ta=25°C)
Gs
NF
50
40
(mA)
D
30
20
Drain Current, I
10
0
-1.0 -0.5 0.0
Gate to Souce voltage, VGS(V)
15
14
13
12
11
10
9
8
7
6
Associated Gain, Gs (dB)
5
4
(VDS=2V)
Publication Date : Apr., 2011
3
< Low Noise GaAs HEMT >
MGF4934BM
4pin flat lead package
S PARAMETERS
Freq.
(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
1 0.986 -14.0 4.534 163.6 0.014 79.1 0.676 -11.0
2 0.961 -27.8 4.478 148.2 0.027 70.5 0.663 -22.3
3 0.918 -41.9 4.394 132.8 0.038 61.9 0.638 -32.7
4 0.863 -59.4 4.523 116.2 0.052 50.3 0.580 -45.1
5 0.808 -72.1 4.309 102.2 0.060 43.3 0.559 -53.8
6 0.748 -85.2 4.148 88.6 0.067 36.9 0.530 -62.2
7 0.683 -98.1 4.015 75.1 0.073 30.5 0.496 -70.0
8 0.613 -111.9 3.860 61.9 0.078 25.3 0.454 -76.5
9 0.543 -126.8 3.744 49.0 0.082 20.9 0.411 -83.1
10 0.474 -142.9 3.644 35.8 0.087 17.1 0.364 -91.0
11 0.421 -160.9 3.552 22.8 0.092 14.0 0.321 -100.6
12 0.395 177.9 3.488 9.6 0.100 11.1 0.278 -114.7
13 0.395 154.9 3.396 -4.0 0.111 7.6 0.239 -133.9
14 0.433 132.9 3.295 -17.6 0.122 2.2 0.214 -159.5
15 0.491 114.0 3.183 -31.5 0.133 -4.2 0.219 170.8
16 0.559 97.5 3.056 -45.9 0.144 -11.1 0.256 144.4
17 0.630 83.0 2.886 -60.6 0.154 -18.6 0.315 122.4
18 0.692 70.3 2.662 -74.9 0.161 -26.6 0.379 104.1
19 0.739 60.2 2.401 -87.7 0.169 -34.2 0.440 88.4
20 0.787 52.4 2.198 -98.5 0.174 -42.1 0.484 73.6
21 0.828 45.4 2.060 -109.9 0.179 -50.4 0.527 60.5
22 0.866 39.4 1.940 -120.6 0.180 -58.5 0.575 47.9
23 0.894 33.7 1.810 -131.4 0.183 -65.4 0.632 35.7
24 0.921 26.1 1.710 -142.1 0.184 -71.5 0.695 25.4
25 0.937 16.9 1.632 -152.9 0.187 -78.0 0.770 16.7
26 0.936 5.9 1.541 -165.3 0.186 -86.0 0.846 8.8
Noise Parameter
Freq. NFmin Rn
(GHz) (dB) (mag) (ang) ()
1 0.25 0.99 7.2 17.0
2 0.26 0.98 11.1 15.5
3 0.27 0.95 18.0 13.5
4 0.29 0.92 27.4 12.0
5 0.31 0.89 38.5 10.5
6 0.33 0.82 53.1 9.0
7 0.36 0.75 68.2 7.5
8 0.38 0.67 83.3 6.0
9 0.41 0.60 100.2 4.5
10 0.43 0.53 115.2 3.0
11 0.48 0.47 131.4 2.0
12 0.51 0.42 150.3 1.5
13 0.54 0.37 167.7 1.5
14 0.58 0.35 -178.8 1.5
(VDS=2V,ID=10mA,Ta=room temperature)
S11 S21 S12 S22
(VDS=2V,ID=10mA, Ta=room temperature))
opt
Reference point
Gate
Reference point
Drain
0.96
45ﾟ
2.5mm
Board: r=2.6
Thickness: 0.4mm
(4-φ0.4: through-hole)
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Apr., 2011
4
< Low Noise GaAs HEMT >
MGF4934BM
4pin flat lead package
S PARAMETERS
(VDS=0V,VGS=0V,Ta=room temperature)
(VDS=0V,VGS=-2.5V,Ta=room temperature)
Freq. S22
(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
1 0.995 -12.5 0.008 96.4 0.008 97.7 0.673 165.1
2 0.990 -24.6 0.018 100.5 0.018 100.7 0.673 152.1
3 0.991 -37.5 0.032 99.5 0.032 98.9 0.671 138.7
4 0.983 -53.3 0.051 92.5 0.051 94.0 0.694 127.4
5 0.976 -67.1 0.074 85.0 0.075 85.5 0.697 112.5
6 0.961 -81.0 0.099 76.0 0.100 76.5 0.704 97.6
7 0.951 -95.7 0.130 65.5 0.131 65.3 0.719 83.4
8 0.940 -112.3 0.163 53.6 0.163 54.3 0.730 70.8
9 0.913 -130.9 0.196 41.0 0.198 41.3 0.745 59.2
10 0.902 -151.8 0.229 27.1 0.230 27.3 0.759 49.3
11 0.887 -175.9 0.256 12.0 0.257 12.7 0.774 41.2
12 0.883 159.0 0.274 -2.5 0.273 -2.7 0.783 34.8
13 0.884 134.4 0.276 -16.9 0.278 -17.2 0.794 29.2
14 0.889 112.1 0.268 -30.5 0.270 -30.2 0.800 24.0
15 0.896 93.6 0.257 -42.0 0.256 -42.0 0.807 18.7
16 0.907 78.5 0.241 -51.5 0.241 -51.1 0.811 13.2
17 0.911 66.4 0.228 -59.6 0.227 -59.8 0.807 7.1
18 0.919 55.9 0.221 -67.5 0.221 -67.4 0.815 0.6
19 0.924 47.1 0.217 -76.6 0.218 -76.5 0.817 -6.9
20 0.919 38.7 0.204 -87.1 0.204 -86.9 0.814 -14.8
21 0.921 31.2 0.192 -95.0 0.193 -95.3 0.810 -23.2
22 0.924 24.3 0.179 -103.1 0.179 -103.2 0.811 -31.2
23 0.928 18.1 0.168 -110.3 0.168 -110.6 0.817 -39.2
24 0.950 11.6 0.159 -116.7 0.157 -116.3 0.816 -46.5
25 0.970 5.4 0.149 -122.1 0.150 -122.1 0.830 -53.8
26 0.978 -1.5 0.141 -128.2 0.141 -128.3 0.844 -61.8
Freq. S22
(GHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
1 0.993 -9.6 0.022 78.7 0.022 79.0 0.998 -10.6
2 0.996 -18.9 0.044 68.6 0.044 68.8 1.000 -21.3
3 0.992 -28.3 0.065 59.8 0.065 59.2 0.991 -31.2
4 0.987 -39.7 0.092 48.4 0.092 48.4 0.984 -42.1
5 0.981 -49.5 0.112 38.8 0.112 38.8 0.986 -51.5
6 0.975 -59.1 0.131 28.8 0.130 29.1 0.980 -60.6
7 0.968 -68.8 0.150 19.2 0.150 19.2 0.975 -70.1
8 0.963 -79.2 0.169 7.7 0.168 8.0 0.968 -80.7
9 0.949 -89.9 0.185 -4.5 0.186 -4.3 0.959 -92.1
10 0.943 -102.2 0.200 -18.4 0.200 -18.5 0.949 -105.6
11 0.932 -117.2 0.209 -34.7 0.209 -34.4 0.943 -121.1
12 0.929 -134.6 0.207 -52.4 0.207 -52.8 0.932 -139.6
13 0.932 -155.8 0.187 -73.4 0.188 -73.6 0.928 -160.7
14 0.938 -179.2 0.148 -96.3 0.149 -96.7 0.942 176.8
15 0.940 156.2 0.091 -119.2 0.091 -119.3 0.947 153.6
16 0.948 133.1 0.033 -137.6 0.034 -136.8 0.953 132.4
17 0.951 112.7 0.018 9.9 0.018 9.0 0.957 112.9
18 0.952 95.4 0.058 0.6 0.058 0.5 0.965 94.8
19 0.956 80.9 0.091 -11.2 0.090 -11.3 0.964 79.2
20 0.951 68.1 0.117 -24.5 0.118 -24.3 0.960 64.6
21 0.953 57.2 0.138 -37.5 0.137 -37.3 0.954 50.5
22 0.946 47.5 0.150 -49.7 0.150 -49.6 0.947 37.4
23 0.950 38.8 0.157 -60.4 0.157 -60.2 0.952 24.9
24 0.965 30.8 0.161 -69.7 0.161 -70.1 0.963 13.3
25 0.982 23.3 0.162 -77.8 0.162 -77.6 0.981 1.6
26 0.993 15.4 0.163 -85.8 0.163 -85.8 0.995 -10.3
S11 S21 S12
S11 S21 S12
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Apr., 2011
5
< Low Noise GaAs HEMT >
MGF4934BM
4pin flat lead package
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Notes regarding these materials
Publication Date : Apr., 2011
6
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