< Low Noise GaAs HEMT >
MGF4931AM
4pin flat lead package
DESCRIPTION
The MGF4931AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
FEATURES
Low noise figure @ f=12GHz
NFmin. = 0.60dB (Typ.)
High associated gain @ f=12GHz
Gs = 11.5dB (Typ.)
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=7.5mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 15000pcs/reel
RoHS COMPLIANT
MGF4931AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
V
GDO
V
GSO
ID
PT Total power dissipation 50 mW
Tch
T
stg
Gate to drain voltage -4 V
Gate to source voltage -4 V
Drain current IDSS mA
Channel temperature 125 C
Storage temperature -55 to +125 C
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions Limits Unit
MIN. TYP. MAX
V
V
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
(BR)GDO
I
I
GS(off)
Gate to drain breakdown voltage
Gate to source leakage current
GSS
Saturated drain current
DSS
Gate to source cut-off voltage
Gs Associated gain
(Ta=25C )
IG=-10A
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500A
VDS=2V,
ID=7.5mA,f=12GHz
(Ta=25C )
Outline Drawing
Fig.1
-3 -- -- V
-- -- 50 A
10 -- 60 mA
-0.1 -- -1.5 V
10.0 11.5 -- dB
-- 0.50 0.80 dB
Publication Date : Apr., 2011
1
< Low Noise GaAs HEMT >
MGF4931AM
4pin flat lead package
Fig.1
Top
0.30
±0.1
±0.1
+0.1
-0.05
(0.65)
②
2.10
1.30
1.30
±0.1
±0.05
(0.65)
(0.65)
①
0.30
+0.1
-0.05
A □
2.05
1.25
0.40
+0.1
-0.05
③
(0.60)
(0.60)
1.25
1.25
(0.65)
±0.05
②
0.30
+0.1
-0.05
±0.05
0.49
0.11
+0.05
-0
Side
Bottom
③
②
②
①
(0.85)
Unit: mm
① Gate
② Source
③ Drain
(GD-30)
Publication Date : Apr., 2011
2
< Low Noise GaAs HEMT >
MGF4931AM
4pin flat lead package
TYPICAL CHARACTERISTICS
50
40
(mA)
D
30
20
Drain Current, I
10
0
01234
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
Noise Figure, NF (dB)
0.4
0.2
0
ID vs. VDS ID vs. VGS
GS=~0.1V/STEP)
(V
Drain to Sourc e voltage, VDS(V)
NF & Gs vs. ID
Gs
NF
0 5 10 15 20
(Ta=25°C)
(f=12GHz, V
DS=2V)
(VDS=2V)
50
40
(mA)
D
30
20
Drain Current, I
10
0
-1.0 -0.5 0.0
Gate to Souce voltage, VGS(V)
15
14
13
12
11
10
9
8
7
6
Associated Gain, Gs (dB)
5
4
Drain Current, ID (mA)
Publication Date : Apr., 2011
3
< Low Noise GaAs HEMT >
)
MGF4931AM
4pin flat lead package
S PARAMETERS
Freq .
(GHz) (Mag) (Ang) (Mag) (Ang) (Mag) (Ang) (Mag) (Ang)
1 0.989 -14.5 4.153 163.1 0.018 77.153 0.734 -12.6
2 0.958 -29.2 4.063 146.8 0.034 66.346 0.709 -24.5
3 0.915 -44.1 4.038 131.1 0.050 56.177 0.686 -36.7
4 0.852 -62.3 4.137 113.8 0.066 43.717 0.621 -51.7
5 0.794 -76.7 3.970 99.2 0.075 35.035 0.592 -62.5
6 0.729 -89.9 3.762 85.1 0.082 27.81 0.557 -72.0
7 0.667 -104.0 3.640 71.1 0.087 20.495 0.518 -81.5
8 0.596 -118.7 3.491 57.3 0.090 13.979 0.473 -90.2
9 0.533 -134.1 3.371 44.1 0.091 9.165 0.421 -99.6
10 0.471 -151.1 3.266 30.6 0.094 5.1001 0.374 -109.1
11 0.425 -170.4 3.179 17.1 0.096 2.4743 0.325 -120.5
12 0.407 168.2 3.137 3.4 0.103 0.389 0.287 -137.2
13 0.413 145.8 3.034 -10.5 0.111 -2.411 0.254 -158.5
14 0.449 124.2 2.935 -25.1 0.120 -6.73 0.246 174.4
15 0.509 105.1 2.805 -40.2 0.131 -13.04 0.273 144.9
16 0.584 88.5 2.646 -55.3 0.141 -20.38 0.329 120.2
17 0.650 74.6 2.444 -70.3 0.147 -27.74 0.402 100.0
18 0.711 62.0 2.179 -85.1 0.150 -35.89 0.478 83.7
19 0.761 51.9 1.920 -97.9 0.153 -43.61 0.543 69.9
20 0.805 43.6 1.737 -108.8 0.155 -51.69 0.597 57.9
21 0.835 37.3 1.580 -119.6 0.156 -59.69 0.642 46.8
22 0.856 32.2 1.453 -129.8 0.154 -66.83 0.681 36.5
23 0.878 28.1 1.350 -139.9 0.150 -73.14 0.724 26.4
24 0.880 23.3 1.261 -149.5 0.148 -77.89 0.768 17.4
25 0.884 16.4 1.205 -159.6 0.150 -83.6 0.824 9.2
26 0.874 9.1 1.140 -170.4 0.147 -89.39 0.856 1.6
Noise Parameter
fRnNF
(GHz) Magn. Angle(deg.
8 0.43 105.6 13.5 0.52
12 0.33 164.0 5.6 0.59
14 0.46 -147.9 7.2 0.89
(VDS=2V,ID=7.5mA,Ta=room temperature)
S11 S21 S12 S22
(VDS=2V,ID=7.5mA, Ta=room temperature))
Reference point
Γ
opt
(Ω)(dB)
min
Gate
Reference point
Drain
0.96
45ﾟ
2.5mm
Board: r=2.6
Thickness: 0.4mm
(4-φ0.4: through-hole)
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Apr., 2011
4
< Low Noise GaAs HEMT >
MGF4931AM
4pin flat lead package
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Publication Date : Apr., 2011
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