Mitsubishi MGF4916G Datasheet

MITSUBISHI SEMICONDUCTOR GaAs FET

Test conditions

ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)

MGF491xG Series

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION

The MGF491xG series super-low-noise HEMT(High Electron
Mobility Transistor) is designed for use in L to Ku band amplifiers.
The hermetically sealed metal-ceramic package assures
minimumu parasitic losses, and has a configuration suitable for
microstrip circuits.
The MGF491*G series is mounted in the super 12 tape.

FEATURES

• Low noise figure @f=12GHz
MGF4916G:NFmin.=0.80dB(MAX.)
MGF4919G:NFmin.=0.50dB(MAX.)

• High associated gain @f=12GHz
Gs=12.0dB(MIN.)

APPLICATION

L to Ku band low noise amplifiers.

QUALITY GRADE

• GG

RECOMMENDED BIAS CONDITIONS

• VDS=2V,ID=10mA

• Refer to Bias Procedure

OUTLINE DRAWING

GD-16

0.5±0.15

4.0±0.2

1.85±0.2

3

ø1.8±0.2

1

0.5±0.15

1
2
3

Unit:millimeters

22

GATE
SOURCE
DRAIN

Symbol Parameter Ratings

VGDO
VGSO

ID

PT
Tch
Tstg

Gate to drain voltage
Gate to source voltage
Drain current

Total power dissipation
Channel temperature
Storage temperature

ELECTRICAL CHARACTERISTICS (Ta=25˚C)

Symbol Unit

V(BR)GDO
IGSS
IDSS
VGs(off)
gm
GS

NFmin.

Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain

Minimum noise figure

Parameter

-4

-4
60 mA
50

125

-65 to +125

IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
VDS=2V,ID=10mA

f=12GHz

Unit

V
V

mW

˚C
˚C

MGF4916G
MGF4919G

-3
–

15

-0.1
–

Limits

Typ MaxMin

–
–
–
–

75

13.512.0
––

–

50

60

-1.5
–
–

0.80

0.50

V

µA

mA

V

mS

dB
dB

dB––

Nov. ´97

TYPICAL CHARACTERISTICS (Ta=25˚C)

MITSUBISHI SEMICONDUCTOR GaAs FET

MGF491xG Series

SUPER LOW NOISE InGaAs HEMT

50

Ta=25˚C

VDS=2V

40

30

20

10

0

-1.0

-0.5 0

GATE TO SOURCE VOLTAGE VGS(V)

NF & Gs vs. ID

(MGF4919G)

Ta=25˚C
VDS=2V

ID vs. VGS

f=12GHz

0.9

0.8

0.7

0.6

0.5

0.4

0.3
0 10

5

GS

NF

15 20

ID vs. VDS

60

Ta=25˚C
VGS=-0.1V/STEP

50

40

30

20

10

0

1 3 4

0

VGS=0V

2 5

DRAIN TO SOURCE VOLTAGE VDS(V)

16

14

12

10

8

25

DRAIN CURRENT ID (mA)

Nov. ´97