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MITSUBISHI SEMICONDUCTOR GaAs FET
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
MGF491xG Series
SUPER LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF491xG series super-low-noise HEMT(High Electron
Mobility Transistor) is designed for use in L to Ku band amplifiers.
The hermetically sealed metal-ceramic package assures
minimumu parasitic losses, and has a configuration suitable for
microstrip circuits.
The MGF491*G series is mounted in the super 12 tape.
FEATURES
• Low noise figure @f=12GHz
MGF4916G:NFmin.=0.80dB(MAX.)
MGF4919G:NFmin.=0.50dB(MAX.)
• High associated gain @f=12GHz
Gs=12.0dB(MIN.)
APPLICATION
L to Ku band low noise amplifiers.
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• VDS=2V,ID=10mA
• Refer to Bias Procedure
OUTLINE DRAWING
GD-16
0.5±0.15
4.0±0.2
1.85±0.2
3
ø1.8±0.2
1
0.5±0.15
1
2
3
Unit:millimeters
22
GATE
SOURCE
DRAIN
Symbol Parameter Ratings
VGDO
VGSO
ID
PT
Tch
Tstg
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol Unit
V(BR)GDO
IGSS
IDSS
VGs(off)
gm
GS
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
Parameter
-4
-4
60 mA
50
125
-65 to +125
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
VDS=2V,ID=10mA
f=12GHz
Unit
V
V
mW
˚C
˚C
MGF4916G
MGF4919G
-3
–
15
-0.1
–
Limits
Typ MaxMin
–
–
–
–
75
13.512.0
––
–
50
60
-1.5
–
–
0.80
0.50
V
µA
mA
V
mS
dB
dB
dB––
Nov. ´97
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TYPICAL CHARACTERISTICS (Ta=25˚C)
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF491xG Series
SUPER LOW NOISE InGaAs HEMT
50
Ta=25˚C
VDS=2V
40
30
20
10
0
-1.0
-0.5 0
GATE TO SOURCE VOLTAGE VGS(V)
NF & Gs vs. ID
(MGF4919G)
Ta=25˚C
VDS=2V
ID vs. VGS
f=12GHz
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0 10
5
GS
NF
15 20
ID vs. VDS
60
Ta=25˚C
VGS=-0.1V/STEP
50
40
30
20
10
0
1 3 4
0
VGS=0V
2 5
DRAIN TO SOURCE VOLTAGE VDS(V)
16
14
12
10
8
25
DRAIN CURRENT ID (mA)
Nov. ´97