MITSUBISHI MGF4851A User Manual
MITSUBISHI Proprietary
< Power GaAs HEMT >
MGF4851A
Leadless ceramic package
DESCRIPTION
The MGF4851A power InGaAs HEMT (High Electron Mobility Transistor)
is designed for use in S to K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
FEATURES
High gain and High P1dB
Glp=11dB , P1dB=14.5dBm (Typ.) @ f=12GHz
APPLICATION
S to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2.5V , ID=25mA
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 3,000pcs/reel
RoHS COMPLIANT
MGF4851A is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
V
GDO
V
GSO
ID
PT Total power dissipation 100 mW
Tch
T
stg
Gate to drain voltage -5 V
Gate to source voltage -5 V
Drain current IDSS mA
Channel temperature 125 °C
Storage temperature -65 to +125 °C
(Ta=25°C )
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)GDO
I
V
GS(off)
P1dB Output Power at 1dB gain
Glp Linear Power Gain
Note: P1dB and Glp are tested with sampling inspection.
Gate to drain breakdown voltage
Saturated drain current
DSS
Gate to source cut-off voltage
Compression
Parameter Test conditions
IG=-10µA
VGS=0V,VDS=2.5V
VDS=2.5V,ID=500µA
VDS=2.5V,ID=25mA
f=12GHz
VDS=2.5V,ID=25mA
f=12GHz,Pin=-5dBm
(Ta=25°C )
Outline Drawing
Fig.1
Limits Unit
MIN. TYP. MAX
-3 -- -- V
30 60 120 mA
-0.1 -0.8 -2.0 V
12 14.5 -- dBm
9 11 -- dB
Publication Date : Apr., 2011
1
< Power GaAs HEMT >
ℵ
ℑ
ℵ
ℑ
G
7
1 A A
MGF4851A
Leadless ceramic package
Fig.1
Top
+0.20
-0.102.15
A
②
①
0
0
2
1
.
.
0
0
+
-
5
1
.
2
③
②
Side
0.20±0.1
0.80±0.1
2-R0.275
2-R0.20
①
②
Bottom
)
2
0
.
1
(
-
2
2
-
0
2
-
(
2
②
.
2
1
0
.
)
2
0
±
0
.
0
5
5
0
.
③
.
5
0
±
0
.
0
5
0
±
5
5
.
0
-
4
(0.30)
(2.30)
from "A" side view
Square shape electrode is Drain
Unit: mm
① Gate
② Source
③ Drain
Publication Date : Apr., 2011
2
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