MITSUBISHI MGF4851A User Manual

MITSUBISHI Proprietary

< Power GaAs HEMT >

MGF4851A

Leadless ceramic package

DESCRIPTION

The MGF4851A power InGaAs HEMT (High Electron Mobility Transistor)
is designed for use in S to K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.

FEATURES

High gain and High P1dB

Glp=11dB , P1dB=14.5dBm (Typ.) @ f=12GHz

APPLICATION

S to K band low noise amplifiers

QUALITY GRADE

GG

RECOMMENDED BIAS CONDITIONS

VDS=2.5V , ID=25mA

Not to be reproduced or disclosed without
permission by Mitsubishi Electric

ORDERING INFORMATION

Tape & reel 3,000pcs/reel

RoHS COMPLIANT

MGF4851A is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Ratings Unit

V

GDO

V

GSO

ID

PT Total power dissipation 100 mW

Tch

T

stg

Gate to drain voltage -5 V

Gate to source voltage -5 V

Drain current IDSS mA

Channel temperature 125 °C

Storage temperature -65 to +125 °C

(Ta=25°C )

ELECTRICAL CHARACTERISTICS

Symbol

V

(BR)GDO

I

V

GS(off)

P1dB Output Power at 1dB gain

Glp Linear Power Gain

Note: P1dB and Glp are tested with sampling inspection.

Gate to drain breakdown voltage

Saturated drain current

DSS

Gate to source cut-off voltage

Compression

Parameter Test conditions

IG=-10µA

VGS=0V,VDS=2.5V

VDS=2.5V,ID=500µA

VDS=2.5V,ID=25mA

f=12GHz
VDS=2.5V,ID=25mA

f=12GHz,Pin=-5dBm

(Ta=25°C )

Outline Drawing

Fig.1

Limits Unit

MIN. TYP. MAX

-3 -- -- V

30 60 120 mA

-0.1 -0.8 -2.0 V

12 14.5 -- dBm

9 11 -- dB

Publication Date : Apr., 2011

1

< Power GaAs HEMT >

ℵ

ℑ

ℵ

ℑ

G

7

1 A A

MGF4851A

Leadless ceramic package

Fig.1

Top

+0.20

-0.102.15

A

②

①

0

0

2

1

.

.

0

0

+

-

5
1

.
2

③

②

Side

0.20±0.1

0.80±0.1

2-R0.275

2-R0.20

①

②

Bottom

)

2

0

.

1

(

-

2

2

-

0

2

-

(

2

②

.

2

1

0

.

)

2

0

±

0

.

0

5

5

0

.

③

.

5

0

±

0

.

0

5

0

±

5

5

.

0

-

4

(0.30)

(2.30)

from "A" side view

Square shape electrode is Drain

Unit: mm

① Gate
② Source
③ Drain

Publication Date : Apr., 2011

2

< Power GaAs HEMT >

MGF4851A

Leadless ceramic package

TYPICAL CHARACTERISTICS

70

VGS=-0.1V/STEP

60

50

(mA)

D

40

30

20

DRAIN CURRENT I

10

0

0 1 2 3 4 5

DRAIN TO SOURCE VOLTAGE VDS(V)

20.00

15.00

VDS=2.5V

ID=25mA

f=12GHz

10.00

5.00

Output Power Po (dBm)

0.00

-10 -5 0 5 10

ID vs. VDS

Po vs. Pin

Input Power Pin (dBm)

(Ta=25°C)

VGS=0V

ID vs. VGS

80

VDS=2V

70

60

(mA)

D

I

50

40

30

20

DRAIN CURRENT

10

0

-1.0 -0.8 -0.6 -0.4 -0.2 0.0

GATE TO SOURCE VOLTAGE VGS(V)

Po vs. Pin

20

VDS=2V

ID=10mA

f=12GHz

15

10

5

Output Power Pout (dBm)

0

-10 -5 0 5 10

Input Power Pin (dBm)

Publication Date : Apr., 2011

3

< Power GaAs HEMT >

Note:

offices.

(GHz)

(mag)

(ang)

(mag)

(ang)

(mag)

(ang)

(mag)

(ang)

26

0.908

-73.2

1.625

171.0

0.068

171.0

0.530

-73.6

MGF4851A

Leadless ceramic package

S PARAMETERS

]

Freq.

1 0.988 -17.6 5.833 163.3 0.014 76.8 0.550 -14.2
2 0.969 -34.6 5.713 147.5 0.028 64.2 0.543 -28.1
3 0.942 -51.1 5.536 132.3 0.040 52.7 0.534 -41.2
4 0.908 -67.4 5.339 117.4 0.052 40.8 0.519 -53.9
5 0.874 -82.6 5.125 103.4 0.061 30.1 0.508 -65.4
6 0.841 -97.4 4.942 89.7 0.070 19.8 0.494 -76.3
7 0.806 -111.9 4.769 76.2 0.078 9.8 0.478 -86.7
8 0.766 -126.6 4.603 62.7 0.086 -0.2 0.455 -97.5

9 0.714 -140.8 4.408 50.2 0.091 -12.4 0.415 -107.0
10 0.670 -154.5 4.277 37.8 0.093 -22.2 0.384 -115.3
11 0.638 -169.3 4.211 25.3 0.096 -31.4 0.351 -124.1
12 0.608 174.5 4.176 12.4 0.099 -40.7 0.318 -132.9
13 0.581 157.3 4.131 -0.9 0.102 -49.9 0.274 -143.7
14 0.569 137.4 4.114 -15.3 0.106 -61.5 0.226 -153.8
15 0.565 115.0 4.038 -30.5 0.103 -71.2 0.184 -165.4
16 0.566 91.9 3.890 -45.6 0.106 -79.8 0.130 177.0
17 0.592 69.4 3.763 -60.3 0.109 -91.6 0.085 130.2
18 0.624 48.6 3.608 -76.1 0.108 -103.7 0.075 59.9
19 0.680 28.2 3.372 -92.2 0.107 -116.0 0.132 18.2
20 0.739 7.7 3.099 -107.8 0.100 -129.0 0.188 -4.6
21 0.771 -9.2 2.815 -122.3 0.093 -138.2 0.251 -20.0
22 0.818 -23.0 2.576 -136.1 0.093 -149.6 0.314 -32.0
23 0.863 -38.7 2.313 -151.8 0.087 -160.1 0.394 -44.3
24 0.877 -51.5 2.018 -165.3 0.077 -173.8 0.447 -56.9
25 0.893 -63.1 1.799 -177.3 0.069 176.9 0.499 -66.2

(VDS=2.5V,ID=25mA,Ta=room temperature)

S22S11 S21 S12

Measurement plane (2.2mm)

Recommended foot pattern; RO4350B/ROGERS(εr=3.48, t=0.254mm)

We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales

Publication Date : Apr., 2011

4

< Power GaAs HEMT >

(GHz)

Note

MGF4851A

Leadless ceramic package

S PARAMETERS

10 0.744 -123.4 4.500 66.5 0.083 10.6 0.483 -81.1
11 0.709 -133.5 4.514 57.5 0.092 3.1 0.468 -86.3
12 0.658 -146.0 4.549 47.0 0.099 -4.6 0.437 -91.4
13 0.607 -160.7 4.589 36.3 0.106 -12.3 0.392 -97.5
14 0.561 176.4 4.607 20.9 0.113 -25.3 0.324 -109.3
15 0.523 151.0 4.547 7.2 0.116 -36.3 0.241 -118.6
16 0.542 123.0 4.470 -6.8 0.120 -48.5 0.140 -131.0
17 0.598 95.1 4.267 -21.7 0.119 -59.8 0.030 -165.6
18 0.679 70.3 3.880 -37.6 0.113 -71.3 0.097 43.6
19 0.760 51.1 3.447 -51.9 0.105 -83.2 0.214 30.0
20 0.827 35.4 3.005 -65.2 0.094 -94.0 0.323 19.9
21 0.890 21.0 2.560 -80.4 0.084 -106.2 0.407 8.0
22 0.921 10.8 2.187 -90.3 0.074 -111.9 0.481 2.4
23 0.932 2.6 1.879 -100.1 0.064 -117.3 0.570 -2.3
24 0.933 -3.9 1.555 -108.1 0.056 -124.3 0.625 -6.3
25 0.947 -9.0 1.330 -114.7 0.049 -127.9 0.681 -7.6
26 0.947 -14.4 1.146 -121.8 0.042 -128.9 0.730 -8.8

Reference Point

(Conditions : VDS=2.5V,ID=25mA,Ta=25deg.C)

f S11 S21 S12 S22

Magn. Angle Magn. Angle Magn. Angle Magn. Angle
1 0.986 -16.1 6.558 165.2 0.015 79.0 0.539 -13.6
2 0.959 -35.1 6.385 148.7 0.028 65.3 0.531 -30.0
3 0.933 -47.6 6.118 136.8 0.040 56.6 0.525 -38.9
4 0.898 -64.4 5.865 123.4 0.050 46.8 0.502 -49.8
5 0.867 -76.5 5.505 112.8 0.058 38.6 0.498 -58.1
6 0.840 -86.5 5.187 103.8 0.064 32.3 0.492 -63.8
7 0.813 -96.0 4.891 94.8 0.069 26.7 0.487 -67.9
8 0.792 -106.6 4.710 83.6 0.073 18.8 0.487 -74.3
9 0.766 -114.9 4.538 74.9 0.077 14.2 0.486 -77.8

Gate

Source

Reference Point

Drain

Source

:

We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales

offices.

Publication Date : Apr., 2011

5

< Power GaAs HEMT >

MGF4851A

Leadless ceramic package

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Keep safety first in your circuit designs!

Notes regarding these materials

Publication Date : Apr., 2011

6