Mitsubishi MGF4714CP Datasheet
MITSUBISHI SEMICONDUCTOR GaAs FET
Nov. ´97
Test conditions
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
MGF4714CP
PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT
DESCRIPTION
The MGF4714CP low-noise HEMT(High Electron Mobility
Transistor) is designed for use in L to Ku band amplifiers.
The plastic mold package offer high cost performance, and has a
configuration suitable for microstrip circuits.
The MGF4714CP is mounted in Super 12 tape.
FEATURES
• Low noise figure
NFmin.=1.00dB(MAX.) @f=12GHz
• High associated gain
Gs=11.0dB(MIN.) @f=12GHz
APPLICATION
L to Ku band low noise amplifiers.
QUALITY GRADE
• GG
RECOMMENDED BIAS CONDITIONS
• VDS=2V,ID=10mA
• Refer to Bias Procedure
OUTLINE DRAWING
(0.6)
2
(ø1.2)
GD-22
2.2±0.2
(R0.1) (R0.1)
4.0±0.3
1
3
0.5±0.1
(8˚)
Unit:millimeters
2
1
Gate
2
Source
3
Drain
Symbol Parameter Ratings
VGDO
VGSO
ID
PT
Tch
Tstg
Gate to drain voltage
Gate to source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol Unit
V(BR)GDO
IGSS
IDSS
VGS(off)
gm
GS
NFmin.
Gate to drain breakdown voltage
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Associated gain
Minimum noise figure
Parameter
-4
-4
60 mA
50
125
-65 to +125
IG=-10µA
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VDS=2V,ID=500µA
VDS=2V,ID=10mA
VDS=2V,ID=10mA
f=12GHz
Unit
V
V
mW
˚C
˚C
-3
–
15
-0.1
–
–
Limits
Typ MaxMin
–
–
–
–
55
–11.0
–
–
50
60
-1.5
–
–
1.00
V
µA
mA
V
mS
dB
dB
Nov. ´97
TYPICAL CHARACTERISTICS (Ta=25˚C)
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF4714CP
PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT
50
Ta=25˚C
VDS=2V
40
30
20
10
0
-1.0
-0.5 0
GATE TO SOURCE VOLTAGE VGS(V)
NF & Gs vs. ID
(f=12GHz)
Ta=25˚C
VDS=2V
GS
1.0
0.9
0.8
ID vs. VGS
ID vs. VDS
60
Ta=25˚C
VGS=-0.1V/STEP
50
40
30
20
10
2.0 5.0
1.0 3.0 4.0
0
VGS=0V
DRAIN TO SOURCE VOLTAGE VDS(V)
14
13
12
11
10
0.7
0.6
0.5
0 15
10
5
NF
ID (mA)
20 25
30
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