Mitsubishi MGF4316G Datasheet

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGF431xG

Super Low Noise InGaAs HEMT

DESCRIPTION

The MGF431xG series super-low-noise HEMT(High Electron
Mobility Transistor) is designed for use in L to K band amplifiers.
The hermetically sealed metal-ceramic package assures
minimum parasitic losses, and has a configuration suitable for
microstrip circuits.

FEATURES

Low noise figure @ f=12GHz
MGF4316G : NF min.=0.80dB (MAX.)
MGF4319G : NF min.=0.50dB (MAX.)

High associated gain
Gs=12.0 dB (MIN.) @ f=12GHz

APPLICATION

L to K band low noise amplifiers.

QUALITY GRADE

GG

RECOMMENDED BIAS CONDITIONS

VDS=2V , ID=10mA
Refer to Bias Procedure

ABSOLUTE MAXIMUM RATINGS

Symbol

VGDO
VGSO
ID
PT
Tch
Tstg

Gate to drain voltage -4 V

Total power dissipation
Channel temperature
Storage temperature

Parameter Ratings Unit

( Ta=25°C )

-4Gate to source voltage
60Drain current mA
50 mW

125

-65 ~ +125 °C

°C

OUTLINE DRAWING

GD-4

< Keep safety first in your circuit designs! >

Mitsubishi Electric Corporation puts the maximum effort into

V

making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.

ELECTRICAL CHARACTERISTICS

Symbol Parameter Test conditions

IGSS

VGS (off)
gm
Gs Associated gain 13.5

NFmin Minimum noise figure

*1 : Channel to ambient

Gate to source leakage current
Saturated drain currentIDSS
Gate to Source cut-off voltage
Transconductance

( Ta=25°C )

Min. Typ. Max
IG= -10µA —-3Gate to drain breakdown voltageV(BR)GDO —
VGS= -2V, VDS=0V
VGS=0V, VDS=2V
VDS=2V, ID=500µA
VDS=2V, ID=10mA —
VDS=2V, ID=10mA, f=12GHz 12

VDS=2V, ID=10mA, f=12GHz

*1

MGF4316G
MGF4319G

—

MITSUBISHI
ELECTRIC

Limits

—
—

75 mS—

——

Unit

50 µA
6015

-1.5—-0.1

—

0.8

0.5——

mA

dB
dB

˚C/W—— 625Rth (ch-a) ∆Vf methodThermal resistance

as of Apr.'98

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Typical Characteristics

MITSUBISHI SEMICONDUCTOR <GaAs FET>

MGF431xG

Super Low Noise InGaAs HEMT

MITSUBISHI
ELECTRIC

as of Apr.'98