MITSUBISHI MGF2445A User Manual
< High-power GaAs FET (small signal gain stage) >
MGF2445A
S to Ku BAND / 1.6W
non - matched
DESCRIPTION
The MGF2445A, power GaAs FET with an N-channel schottky
gate, is designed for use in S to Ku band amplifiers.
FEATURES
High output power
Po=32.0dBm(TYP.) @f=12GHz
High linear power gain
GLP=6.0dB(TYP.) @f=12GHz
APPLICATION
S to Ku Band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=450mA
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
VGSO
ID Drain current 1500 mA
IGR Reverse gate current -3.6 mA
IGF Forward gate current 15 mA
PT*1 Total power dissipation 10 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1:Tc=25C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB Output power
GLP Linear power gain 5.5 6.0 - dB
P.A.E. Power added efficiency
Rth(ch-c) *2
*2 :Channel-case
Saturated drain current VDS=3V,VGS=0V - Transconductance VDS=3V,ID=450mA - 400
Gate to source cut-off voltage VDS=3V,ID=3mA - - -4.5 V
Thermal resistance
voltage
(Ta=25C)
Keep Safety first in your circuit designs!
-15 V
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
VDS=10V,ID(RF off)=450mA
f=12GHz
Vf method - - 15
Δ
Min. Typ. Max.
31 32 - dBm
- 20 - %
1500 mA
- mS
C/W
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF2445A
S to Ku BAND / 1.6W
non - matched
MGF2445A TYPICAL CHARACTERISTICS( Ta=25deg.C )
Po,PAE vs. Pin
MGF2445A S-parameters( Ta=25deg.C , VDS=10(V),IDS=450(mA) )
f
(GHz)
2.0 0.914 -127.4 4.336 103.4 0.011 21.9 0.589 -175.6
4.0 0.889 -167.6 2.292 71.7 0.012 0.2 0.634 -177.1
6.0 0.886 170.5 1.451 49.6 0.012 -12.4 0.682 -179.6
8.0 0.889 154.7 0.999 31.2 0.012 -22.3 0.729 176.7
10.0 0.895 141.8 0.721 14.9 0.011 -31.0 0.773 172.2
12.0 0.902 130.7 0.535 0.4 0.011 -38.8 0.811 167.3
14.0 0.910 121.1 0.406 -12.7 0.010 -45.9 0.843 162.2
S11,S22 vs. f S21,S12 vs. f
Po, PAE vs. Pin Po, PAE vs. VDS
S Parameters(Typ.)
S11 S21 S12 S22
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.)
Publication Date : Apr., 2011
2
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