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< High-power GaAs FET (small signal gain stage) >
MGF2430A
S to Ku BAND / 1.1W
non - matched
DESCRIPTION
The MGF2430A, power GaAs FET with an N-channel schottky
gate, is designed for use in S to Ku band amplifiers.
FEATURES
High output power
Po=30.5dBm(TYP.) @f=14.5GHz
High linear power gain
GLP=6.5dB(TYP.) @f=14.5GHz
High power added efficiency
P.A.E.=27%(TYP.) @f=14.5GHz,P1dB
APPLICATION
S to Ku Band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=300mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
VGSO
ID Drain current 800 mA
IGR Reverse gate current -2.4 mA
IGF Forward gate current 10 mA
PT*1 Total power dissipation 5 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1:Tc=25C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB Output power
GLP Linear power gain 5.5 6.5 - dB
P.A.E. Power added efficiency
Rth(ch-c) *2
*2 :Channel-case
Saturated drain current VDS=3V,VGS=0V 400 600
Transconductance VDS=3V,ID=300mA 200 260
Gate to source cut-off voltage VDS=3V,ID=2mA -1 -2.5 -4 V
Thermal resistance
voltage
(Ta=25C)
Keep Safety first in your circuit designs!
-15 V
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
VDS=10V,ID(RF off)=300mA
f=14.5GHz
Vf method - - 30
Δ
Min. Typ. Max.
29 30.5 - dBm
- 27 - %
800 mA
- mS
C/W
Publication Date : Apr., 2011
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< High-power GaAs FET (small signal gain stage) >
MGF2430A
S to Ku BAND / 1.1W
non - matched
MGF2430A TYPICAL CHARACTERISTICS( Ta=25deg.C )
Po,PAE vs. Pin (f=14.5GHz)
MGF2430A S-parameters( Ta=25deg.C , VDS=10(V),IDS=300(mA) )
S11,S22 vs. f S21,S12 vs. f
f
(GHz)
4 0.934 -153.0 1.641 57.0 0.030 18.0 0.513 -132.0 0.501 17.4
6 0.900 -168.0 1.109 34.0 0.035 19.0 0.620 -142.0 0.969 15.0
8 0.853 173.0 0.927 13.0 0.043 20.0 0.699 -161.5 0.811 13.3
10 0.813 153.0 0.830 -13.0 0.052 18.5 0.723 180.0 1.008 11.5
12 0.750 131.5 0.788 -41.0 0.058 13.0 0.754 162.0 1.331 7.9
14 0.790 105.0 0.730 -69.0 0.083 -7.5 0.783 146.0 1.108 7.4
16 0.530 61.0 0.689 -104.0 0.153 -37.0 0.836 132.0 0.681 6.5
S11 S21 S12 S22 K MSG/MAG
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) - dB
Publication Date : Apr., 2011
S Parameters(Typ.)
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Page 3
< High-power GaAs FET (small signal gain stage) >
MGF2430A
S to Ku BAND / 1.1W
non - matched
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
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Publication Date : Apr., 2011
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