MITSUBISHI MGF2415A User Manual
< High-power GaAs FET (small signal gain stage) >
MGF2415A
S to Ku BAND / 0.55W
non - matched
DESCRIPTION
The MGF2415A, power GaAs FET with an N-channel schottky
gate, is designed for use in S to Ku band amplifiers.
FEATURES
High output power
Po=27.5dBm(TYP.) @f=14.5GHz
High linear power gain
GLP=7.5dB(TYP.) @f=14.5GHz
High power added efficiency
P.A.E.=29%(TYP.) @f=14.5GHz,P1dB
APPLICATION
S to Ku Band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=150mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
VGSO
ID Drain current 400 mA
IGR Reverse gate current -1.2 mA
IGF Forward gate current 5 mA
PT*1 Total power dissipation 2.5 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1:Tc=25C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB Output power
GLP Linear power gain 6.5 7.5 - dB
P.A.E. Power added efficiency
Rth(ch-c) *2
*2 :Channel-case
Saturated drain current VDS=3V,VGS=0V 200 300
Transconductance VDS=3V,ID=150mA 100 130
Gate to source cut-off voltage VDS=3V,ID=1mA -1 -2.5 -4 V
Thermal resistance
voltage
(Ta=25C)
Keep Safety first in your circuit designs!
-15 V
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
VDS=10V,ID(RF off)=150mA
f=14.5GHz
Vf method - - 60
Δ
Min. Typ. Max.
26 27.5 - dBm
- 29 - %
400 mA
- mS
C/W
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF2415A
S to Ku BAND / 0.55W
non - matched
MGF2415A TYPICAL CHARACTERISTICS( Ta=25deg.C )
Po,PAE vs. Pin (f=14.5GHz)
MGF2430A S-parameters( Ta=25deg.C , VDS=10(V),IDS=150(mA) )
S11,S22 vs. f S21,S12 vs. f
f
(GHz)
4 0.930 -132.0 1.656 62.0 0.028 10.0 0.564 -93.5 0.774 17.7
6 0.904 -156.0 1.250 42.5 0.034 2.0 0.654 -108.0 0.884 15.7
8 0.847 -177.0 1.067 22.5 0.040 -6.0 0.699 -128.5 1.248 11.3
10 0.804 162.0 1.010 -8.5 0.045 -14.0 0.704 -149.5 1.521 9.3
12 0.709 141.0 0.968 -30.0 0.052 -22.0 0.721 -173.0 1.917 7.2
14 0.530 109.5 0.869 -78.0 0.069 -41.0 0.772 163.5 2.106 5.0
16 0.083 21.0 0.779 -130.0 0.113 -77.0 0.889 139.5 1.154 6.0
S11 S21 S12 S22 K MSG/MAG
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) - dB
Publication Date : Apr., 2011
S Parameters(Typ.)
2
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