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< High-power GaAs FET (small signal gain stage) >
MGF2415A
S to Ku BAND / 0.55W
non - matched
DESCRIPTION
The MGF2415A, power GaAs FET with an N-channel schottky
gate, is designed for use in S to Ku band amplifiers.
FEATURES
High output power
Po=27.5dBm(TYP.) @f=14.5GHz
High linear power gain
GLP=7.5dB(TYP.) @f=14.5GHz
High power added efficiency
P.A.E.=29%(TYP.) @f=14.5GHz,P1dB
APPLICATION
S to Ku Band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=150mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
VGSO
ID Drain current 400 mA
IGR Reverse gate current -1.2 mA
IGF Forward gate current 5 mA
PT*1 Total power dissipation 2.5 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1:Tc=25C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB Output power
GLP Linear power gain 6.5 7.5 - dB
P.A.E. Power added efficiency
Rth(ch-c) *2
*2 :Channel-case
Saturated drain current VDS=3V,VGS=0V 200 300
Transconductance VDS=3V,ID=150mA 100 130
Gate to source cut-off voltage VDS=3V,ID=1mA -1 -2.5 -4 V
Thermal resistance
voltage
(Ta=25C)
Keep Safety first in your circuit designs!
-15 V
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
VDS=10V,ID(RF off)=150mA
f=14.5GHz
Vf method - - 60
Δ
Min. Typ. Max.
26 27.5 - dBm
- 29 - %
400 mA
- mS
C/W
Publication Date : Apr., 2011
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< High-power GaAs FET (small signal gain stage) >
MGF2415A
S to Ku BAND / 0.55W
non - matched
MGF2415A TYPICAL CHARACTERISTICS( Ta=25deg.C )
Po,PAE vs. Pin (f=14.5GHz)
MGF2430A S-parameters( Ta=25deg.C , VDS=10(V),IDS=150(mA) )
S11,S22 vs. f S21,S12 vs. f
f
(GHz)
4 0.930 -132.0 1.656 62.0 0.028 10.0 0.564 -93.5 0.774 17.7
6 0.904 -156.0 1.250 42.5 0.034 2.0 0.654 -108.0 0.884 15.7
8 0.847 -177.0 1.067 22.5 0.040 -6.0 0.699 -128.5 1.248 11.3
10 0.804 162.0 1.010 -8.5 0.045 -14.0 0.704 -149.5 1.521 9.3
12 0.709 141.0 0.968 -30.0 0.052 -22.0 0.721 -173.0 1.917 7.2
14 0.530 109.5 0.869 -78.0 0.069 -41.0 0.772 163.5 2.106 5.0
16 0.083 21.0 0.779 -130.0 0.113 -77.0 0.889 139.5 1.154 6.0
S11 S21 S12 S22 K MSG/MAG
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) - dB
Publication Date : Apr., 2011
S Parameters(Typ.)
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Page 3
< High-power GaAs FET (small signal gain stage) >
MGF2415A
S to Ku BAND / 0.55W
non - matched
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
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Publication Date : Apr., 2011
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