MITSUBISHI MGF2407A User Manual
< High-power GaAs FET (small signal gain stage) >
MGF2407A
S to Ku BAND / 0.28W
non - matched
DESCRIPTION
The MGF2407A, power GaAs FET with an N-channel schottky
gate, is designed for use in S to Ku band amplifiers.
FEATURES
High output power
Po=24.5dBm(TYP.) @f=14.5GHz
High linear power gain
GLP=8.0dB(TYP.) @f=14.5GHz
High power added efficiency
P.A.E.=30%(TYP.) @f=14.5GHz,P1dB
APPLICATION
S to Ku Band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=75mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
VGSO
ID Drain current 200 mA
IGR Reverse gate current -0.6 mA
IGF Forward gate current 2.5 mA
PT*1 Total power dissipation 1.5 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1:Tc=25C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB Output power
GLP Linear power gain 7 8 - dB
P.A.E. Power added efficiency
Rth(ch-c) *2
*2 :Channel-case
Saturated drain current VDS=3V,VGS=0V 100 150
Transconductance VDS=3V,ID=0.5mA 50 65
Gate to source cut-off voltage VDS=3V,ID=75mA -1 -2.5 -4 V
Thermal resistance
voltage
(Ta=25C)
Keep Safety first in your circuit designs!
-15 V
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
VDS=10V,ID(RF off)=75mA
f=14.5GHz
Vf method - - 100
Δ
Min. Typ. Max.
23 24.5 - dBm
- 30 - %
200 mA
- mS
C/W
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF2407A
S to Ku BAND / 0.28W
non - matched
MGF2407A TYPICAL CHARACTERISTICS( Ta=25deg.C )
Po,PAE vs. Pin (f=14.5GHz)
MGF2407A S-parameters( Ta=25deg.C , VDS=10(V),IDS=75(mA) )
S11,S22 vs. f S21,S12 vs. f
f
(GHz)
4 0.968 -112.5 1.766 81.5 0.024 -6.0 0.713 -70.5 0.380 18.7
6 0.929 -135.5 1.279 48.5 0.028 -6.0 0.758 -93.5 0.813 16.6
8 0.891 -157.5 1.147 26.0 0.033 -17.0 0.777 -116.0 0.948 15.4
10 0.833 -180.0 1.111 -5.0 0.041 -30.5 0.782 -139.0 1.176 11.8
12 0.719 158.0 1.080 -36.0 0.050 -50.0 0.793 -164.5 1.583 8.9
14 0.469 133.5 1.030 -85.0 0.059 -82.0 0.818 168.0 2.276 6.1
16 0.172 -165.5 0.967 -153.0 0.073 -123.0 0.911 144.5 1.245 8.2
S11 S21 S12 S22 K MSG/MAG
Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) - dB
Publication Date : Apr., 2011
S Parameters(Typ.)
2
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