MITSUBISHI MGF1954A User Manual

MITSUBISHI Proprietary

< Power GaAs FET >

MGF1954A

Leadless ceramic package

DESCRIPTION

The MGF1954A power MES FET is designed for use in S to Ku band
power amplifiers.
The lead-less ceramic package assures minimum parasitic losses.

FEATURES

High gain and High P1dB

Glp=5.0dB , P1dB=23dBm (Typ.) @ f=12GHz

APPLICATION

S to Ku band low noise amplifiers

QUALITY GRADE

GG

RECOMMENDED BIAS CONDITIONS

VDS=6V , ID=100mA

Not to be reproduced or disclosed without
permission by Mitsubishi Electric

ORDERING INFORMATION

Tape & reel 3,000pcs/reel

RoHS COMPLIANT

MGF1954A is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Ratings Unit

V

GDO

V

GSO

ID

PT Total power dissipation 1 W

Tch

T

stg

Gate to drain voltage -8 V

Gate to source voltage -8 V

Drain current 400 mA

Channel temperature 125 °C

Storage temperature -65 to +125 °C

(Ta=25°C )

ELECTRICAL CHARACTERISTICS

Symbol

V

(BR)GDO

I

V

GS(off)

P1dB Output power at 1dB gain

Glp Linear power gain

Note: P1B and Glp are tested with sampling inspection.

Gate to drain breakdown voltage

Saturated drain current

DSS

Gate to source cut-off voltage

compression

Parameter Test conditions

IG=-100µA

VGS=0V,VDS=3V

VDS=3V,ID=1mA

(Ta=25°C )

VDS=6V, ID=100mA,

f=12GHz
VDS=4V, ID=100mA,

f=12GHz, Pin=-5dBm

Outline Drawing

Fig.1

Limits Unit

MIN. TYP. MAX

-8 -15 -- V

105 200 400 mA

-0.3 -1.4 -3.5 V

21 23 -- dBm

3 5 -- dB

Publication Date : Apr., 2011

1

< Power GaAs FET >

ℵ

ℑ

ℵ

ℑ

F

2

4 A A

MGF1954A

Leadless ceramic package

Fig.1

Top

+0.20

-0.102.15

A

②

①

0

0

2

1

.

.

0

0

+

-

5
1

.
2

③

②

Side

0.20±0.1

0.80±0.1

2-R0.275

2-R0.20

①

②

Bottom

)

2

0

.

1

(

-

2

2

-

0

2

-

(

2

②

.

2

1

0

.

)

2

0

±

0

.

0

5

5

0

.

③

.

5

0

±

0

.

0

5

0

±

5

5

.

0

-

4

(0.30)

(2.30)

from "A" side view

Square shape electrode is Drain

Unit: mm

① Gate
② Source
③ Drain

Publication Date : Apr., 2011

2

< Power GaAs FET >

MGF1954A

Leadless ceramic package

TYPICAL CHARACTERISTICS

300

250

(mA)

200

D

150

Ta=25deg.C
VGS=-0.2V/STEP

100

DRAIN CURRENT I

50

0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

DRAIN TO SOURCE VOLTAGE VDS(V)

30

25

20

Ta= 2 5 de g .C

Ta= 2 5 de g .C

Ta= 2 5 de g .CTa= 2 5 de g .C
VD S = 6 V

VD S = 6 V

VD S = 6 VVD S = 6 V
ID= 1 00 m A

ID= 1 00 m A

ID= 1 00 m AID= 1 00 m A
f= 1 2GH z

f= 1 2GH z

f= 1 2GH zf= 1 2GH z

15

Po ( dBm)

Po ( dBm)

Po ( dBm)

Po ( dBm)

10

5

0 5 10 15 20 25

ID vs. V

Po v s. Pin

Po v s. Pin

Po v s. PinPo v s. Pin

Pin ( dBm)

Pin ( dBm)

Pin ( dBm)Pin ( dBm)

DS

VGS=0V

(Ta=25°C)

300

ID vs. V

Ta=25deg.C
VDS=6V

250

(mA)

D

200

I

150

100

DRAIN CURRENT

50

0

-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0

GATE TO SOURCE VOLTAGE VGS(V)

GS

Publication Date : Apr., 2011

3

< Power GaAs FET >

(Conditions : VDS=6V,ID=100mA,Ta=25deg.C)

MAG/MSG

Note:

MGF1954A

Leadless ceramic package

S PARAMETERS

f S11 S21 S12 S22 K

(GHz) Mag. Angle Mag. Angle Mag. Angle Mag. Angle (dB)

1 0.903 -52.0 8.141 142.0 0.027 61.9 0.216 -45.4 0.41 24.8
2 0.771 -96.4 6.285 111.6 0.042 40.2 0.197 -82.6 0.74 21.8
3 0.697 -122.5 4.948 94.1 0.050 31.9 0.194 -99.7 1.00 20.0
4 0.672 -145.4 4.003 78.6 0.054 26.1 0.197 -116.0 1.19 16.0
5 0.659 -162.1 3.393 65.4 0.058 21.5 0.204 -123.3 1.34 14.2
6 0.652 -176.3 2.977 53.0 0.062 19.0 0.207 -125.7 1.46 12.8
7 0.649 169.9 2.685 40.2 0.067 15.7 0.209 -127.1 1.50 11.9
8 0.645 156.5 2.499 26.8 0.073 12.7 0.205 -128.9 1.49 11.2

9 0.640 142.2 2.322 13.9 0.080 7.5 0.190 -132.9 1.50 10.4
10 0.636 126.0 2.174 0.5 0.091 1.1 0.165 -139.4 1.47 9.8
11 0.620 107.6 2.005 -14.3 0.096 -8.8 0.124 -153.6 1.60 8.7
12 0.617 88.8 1.845 -29.4 0.101 -17.7 0.082 172.2 1.72 7.7
13 0.634 70.5 1.654 -44.6 0.104 -26.8 0.085 109.8 1.83 6.8
14 0.664 53.6 1.467 -59.3 0.105 -37.6 0.151 70.8 1.93 5.9
15 0.711 38.5 1.291 -73.1 0.102 -46.5 0.235 52.1 1.98 5.3
16 0.767 26.2 1.123 -86.4 0.101 -56.1 0.322 39.7 1.90 5.0
17 0.821 14.6 0.965 -99.2 0.097 -65.4 0.408 30.2 1.79 4.8
18 0.863 5.3 0.813 -112.1 0.094 -74.2 0.474 20.6 1.68 4.6

Gate

Source

Reference Point

Reference Point

Drain

Source

We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales

offices.

Publication Date : Apr., 2011

4

< Power GaAs FET >

MGF1954A

Leadless ceramic package

•

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and

more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire ore property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i) placement
of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any
malfunction or mishap.

•

These materials are intended as a reference to assist our customers in the selection of the Mitsubishi

semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

•

Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-

party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit
application examples contained in these materials.

•

All information contained in these materials, including product data, diagrams, charts, programs and

algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons.
It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical in accuracies or typographical errors.
Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from
these inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.mitsubishielectric.com/).

•

When using any or all of the information contained in these materials, including product data, diagrams,

charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation
assumes no responsibility for any damage, liability or other loss resulting from the information contained
herein.

•

Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or

system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

•

The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole

ore in part these materials.

•

If these products or technologies are subject to the Japanese export control restrictions, they must be

exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country
of destination is prohibited.

•

Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product

distributor for further details on these materials or the products contained therein.

© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Keep safety first in your circuit designs!

Notes regarding these materials

Publication Date : Apr., 2011

5