MITSUBISHI MGF1953A User Manual

MITSUBISHI Proprietary

< Power GaAs FET >

MGF1953A

Leadless ceramic package

DESCRIPTION

The MGF1953A power MES FET is designed for use in S to Ku band
power amplifiers.
The lead-less ceramic package assures minimum parasitic losses.

FEATURES

High gain and High P1dB

Glp=6.0dB , P1dB=20dBm (Typ.) @ f=12GHz

APPLICATION

S to Ku band low noise amplifiers

QUALITY GRADE

GG

RECOMMENDED BIAS CONDITIONS

VDS=4V , ID=100mA

Not to be reproduced or disclosed without
permission by Mitsubishi Electric

ORDERING INFORMATION

Tape & reel 3,000pcs/reel

RoHS COMPLIANT

MGF1953A is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Ratings Unit

V

GDO

V

GSO

ID

PT Total power dissipation 1 W

Tch

T

stg

Gate to drain voltage -8 V

Gate to source voltage -8 V

Drain current 400 mA

Channel temperature 125 °C

Storage temperature -65 to +125 °C

(Ta=25°C )

ELECTRICAL CHARACTERISTICS

Symbol

V

(BR)GDO

I

V

GS(off)

P1dB Output power at 1dB gain

Glp Linear power gain

Note: P1B and Glp are tested with sampling inspection.

Gate to drain breakdown voltage

Saturated drain current

DSS

Gate to source cut-off voltage

compression

Parameter Test conditions

IG=-100µA

VGS=0V,VDS=3V

VDS=3V,ID=1mA

(Ta=25°C )

VDS=4V, ID=100mA,

f=12GHz
VDS=4V, ID=100mA,

f=12GHz, Pin=-5dBm

Outline Drawing

Fig.1

Limits Unit

MIN. TYP. MAX

-8 -15 -- V

105 200 400 mA

-0.3 -1.4 -3.5 V

18 20 -- dBm

4 6 -- dB

Publication Date : Apr., 2011

1

< Power GaAs FET >

ℵ

ℑ

ℵ

ℑ

E

2

4 A A

MGF1953A

Leadless ceramic package

Fig.1

Top

+0.20

-0.102.15

A

②

①

0

0

2

1

.

.

0

0

+

-

5
1

.
2

③

②

Side

0.20±0.1

0.80±0.1

2-R0.275

2-R0.20

①

②

Bottom

)

2

0

.

1

(

-

2

2

-

0

2

-

(

2

②

.

2

1

0

.

)

2

0

±

0

.

0

5

5

0

.

③

.

5

0

±

0

.

0

5

0

±

5

5

.

0

-

4

(0.30)

(2.30)

from "A" side view

Square shape electrode is Drain

Unit: mm

① Gate
② Source
③ Drain

Publication Date : Apr., 2011

2

< Power GaAs FET >

MGF1953A

Leadless ceramic package

TYPICAL CHARACTERISTICS

300

250

200

Ta=25deg.C
VGS=-0.2V/STEP

ID vs. V

150

100

DRAIN CURRENT ID(mA)

50

0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

DRAIN TO SOURCE VOLTAGE VDS(V)

Po vs. Pin

Po vs. Pin

Po vs. PinPo vs. Pin

30

30

3030

25

25

2525

20

20

2020

Ta= 2 5 d e g.C

Ta= 2 5 d e g.C

Ta= 2 5 d e g.CTa= 2 5 d e g.C
VD S = 4 V

VD S = 4 V

VD S = 4 VVD S = 4 V
ID= 10 0 m A

ID= 10 0 m A

ID= 10 0 m AID= 10 0 m A
f= 1 2GH z

f= 1 2GH z

f= 1 2GH zf= 1 2GH z

15

15

1515

Po (dBm )

Po (dBm )

Po (dBm )

Po (dBm )

10

10

1010

5555

0000 5555 10

DS

VGS=0V

10 15

1010

Pin (d Bm)

Pin (d Bm)

Pin (d Bm)Pin (d Bm)

15 20

1515

(Ta=25°C)

20 25

2020

25

2525

300

Ta=25deg.C
VDS=4V

250

(mA)

D

200

I

150

100

DRAIN CURRENT

50

0

-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0

GATE TO SOURCE VOLTAGE VGS(V)

ID vs. V

GS

Publication Date : Apr., 2011

3

< Power GaAs FET >

MGF1953A

Leadless ceramic package

S PARAMETERS

f S11 S21 S12 S22 K

(GHz) Mag. Angle Mag. Angle Mag. Angle Mag. Angle (dB)

1 0.907 -51.1 8.288 143.0 0.026 63.3 0.148 -62.0 0.40 25.0
2 0.775 -95.1 6.461 112.7 0.041 42.5 0.161 -105.9 0.73 21.9
3 0.702 -121.5 5.090 95.3 0.049 34.4 0.173 -123.3 0.99 20.1
4 0.674 -144.5 4.128 79.9 0.055 28.9 0.187 -138.9 1.16 16.3
5 0.661 -161.3 3.521 66.9 0.060 23.7 0.190 -145.1 1.29 14.5
6 0.653 -175.4 3.105 54.6 0.065 20.8 0.185 -146.9 1.38 13.1
7 0.650 170.8 2.810 41.7 0.071 17.5 0.175 -147.3 1.41 12.2
8 0.650 157.4 2.609 28.9 0.078 12.7 0.164 -149.1 1.40 11.5

9 0.642 143.3 2.440 16.2 0.086 6.9 0.142 -154.0 1.40 10.8
10 0.640 127.4 2.270 2.4 0.096 -0.1 0.114 -165.1 1.39 10.0
11 0.623 109.0 2.091 -12.5 0.103 -10.3 0.083 166.0 1.50 8.9
12 0.619 90.0 1.908 -27.6 0.106 -20.4 0.085 113.6 1.63 7.9
13 0.634 71.7 1.710 -42.4 0.108 -29.8 0.140 75.8 1.75 7.0
14 0.666 54.3 1.507 -57.2 0.107 -41.2 0.217 54.5 1.86 6.2
15 0.713 39.4 1.314 -70.2 0.105 -50.7 0.300 41.8 1.89 5.5
16 0.769 27.0 1.139 -82.8 0.101 -59.9 0.378 32.0 1.84 5.2
17 0.822 15.6 0.976 -95.2 0.097 -68.4 0.455 23.4 1.76 5.0
18 0.865 5.9 0.821 -107.2 0.091 -77.2 0.513 15.3 1.67 4.7

Reference Point

(Conditions : VDS=4V,ID=100mA,Ta=25deg.C)

Gate

Source

Source

Reference Point

Drain

Note

We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our

sales offices.

Publication Date : Apr., 2011

4

< Power GaAs FET >

MGF1953A

Leadless ceramic package

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Notes regarding these materials

Publication Date : Apr., 2011

5