MITSUBISHI MGF1951A User Manual

MITSUBISHI Proprietary

< Power GaAs FET >

MGF1951A

Leadless ceramic package

DESCRIPTION

The MGF1951A power MES FET is designed for use in S to Ku band
power amplifiers.
The lead-less ceramic package assures minimum parasitic losses.

FEATURES

High gain and High P1dB

Glp=9.0dB , P1dB=13dBm (Typ.) @ f=12GHz

APPLICATION

S to Ku band low noise amplifiers

QUALITY GRADE

GG

RECOMMENDED BIAS CONDITIONS

VDS=3V , ID=30mA

Not to be reproduced or disclosed without
permission by Mitsubishi Electric

ORDERING INFORMATION

Tape & reel 3,000pcs/reel

RoHS COMPLIANT

MGF1951A is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Ratings Unit

V

GDO

V

GSO

ID

PT Total power dissipation 300 mW

Tch

T

stg

Gate to drain voltage -8 V

Gate to source voltage -8 V

Drain current 120 mA

Channel temperature 125 °C

Storage temperature -65 to +125 °C

(Ta=25°C )

ELECTRICAL CHARACTERISTICS

Symbol

V

(BR)GDO

I

V

GS(off)

P1dB Output power at 1dB gain

Glp Linear power gain

Note: P1B and Glp are tested with sampling inspection.

Gate to drain breakdown voltage

Saturated drain current

DSS

Gate to source cut-off voltage

compression

Parameter Test conditions

IG=-30µA

VGS=0V,VDS=3V

VDS=3V,ID=300µA

(Ta=25°C )

VDS=3V, ID=30mA,

f=12GHz
VDS=3V, ID=30mA,

f=12GHz, Pin=-5dBm

Outline Drawing

Fig.1

Limits Unit

MIN. TYP. MAX

-8 -15 -- V

35 60 120 mA

-0.3 -1.4 -3.5 V

11 13 -- dBm

7 9 -- dB

Publication Date : Apr., 2011

1

< Power GaAs FET >

ℵ

ℑ

ℵ

ℑ

C

2

4 A A

MGF1951A

Leadless ceramic package

Fig.1

Top

+0.20

-0.102.15

A

②

①

0

0

2

1

.

.

0

0

+

-

5
1

.
2

③

②

Side

0.20±0.1

0.80±0.1

2-R0.275

2-R0.20

①

②

Bottom

)

2

0

.

1

(

-

2

2

-

0

2

-

(

2

②

.

2

1

0

.

)

2

0

±

0

.

0

5

5

0

.

③

.

5

0

±

0

.

0

5

0

±

5

5

.

0

-

4

(0.30)

(2.30)

from "A" side view

Square shape electrode is Drain

Unit: mm

① Gate
② Source
③ Drain

Publication Date : Apr., 2011

2

< Power GaAs FET >

MGF1951A

Leadless ceramic package

TYPICAL CHARACTERISTICS

100

Ta=25deg.C

90

VGS=-0.2V/STEP

80

70

(mA)

D

60

50

40

30

DRAIN CURRENT I

20

10

0

0.0 1.0 2.0 3.0 4.0 5.0

DRAIN TO SOURCE VOLTAGE VDS(V)

2 0

2 0

2 02 0

1 5

1 5

1 51 5

1 0

1 0

1 01 0

Ta=2 5 de g .C

Ta=2 5 de g .C

Ta=2 5 de g .CTa= 25 de g.C
VD S = 3 V

VD S = 3 V

VD S = 3 VVD S = 3 V
ID = 30 mA

ID = 30 mA

ID = 30 mAID = 30 mA
f= 12 GH z

f= 12 GH z

f= 12 GH zf= 12 GH z

5555

Po ( dBm )

Po ( dBm )

Po ( dBm )

Po ( dBm )

0000

- 5

- 5

- 5- 5

- 1 5

- 1 5 - 1 0

- 1 5- 1 5

ID vs. V

Po vs. P in

Po vs. P in

Po vs. P inPo vs. P in

- 1 0 - 5

- 5 0000 5555 1 0

- 1 0- 1 0

- 5- 5

Pi n (dBm)

Pi n (dBm)

Pi n (dBm)Pi n (dBm)

DS

VGS=0V

1 0 1 5

1 01 0

(Ta=25°C)

1 5

1 51 5

100

Ta=25deg.C

90

VDS=3V

80

70

(mA)

D

I

60

50

40

30

DRAIN CURRENT

20

10

0

-3.0 -2.5 -2.0 - 1.5 -1.0 -0.5 0.0

GATE TO SOURCE VOLTAGE VGS(V)

ID vs. V

GS

Publication Date : Apr., 2011

3

< Power GaAs FET >

Note:

MGF1951A

Leadless ceramic package

S PARAMETERS

f S11 S21 S12 S22 K

(GHz) Mag. Angle Mag. Angle Mag. Angle Mag. Angle (dB)

1 0.984 -17.7 4.239 163.2 0.016 78.2 0.581 -11.3 0.18 24.3
2 0.946 -38.6 4.103 144.3 0.031 64.3 0.565 -26.2 0.32 21.3
3 0.906 -52.5 3.914 131.2 0.043 54.3 0.548 -34.3 0.43 19.6
4 0.857 -71.1 3.710 115.9 0.054 44.2 0.518 -45.5 0.53 18.4
5 0.811 -85.3 3.445 103.3 0.061 35.6 0.509 -54.9 0.64 17.5
6 0.771 -97.4 3.197 92.5 0.065 29.6 0.500 -61.4 0.76 16.9
7 0.736 -109.8 2.984 81.7 0.069 23.7 0.502 -66.9 0.86 16.4
8 0.710 -121.6 2.847 70.7 0.071 19.0 0.507 -72.1 0.93 16.0

9 0.679 -133.6 2.737 60.4 0.075 15.1 0.509 -75.9 0.99 15.6
10 0.645 -146.3 2.659 20.1 0.083 11.3 0.513 -79.6 0.99 15.1
11 0.594 -159.8 2.600 39.5 0.089 2.6 0.496 -84.2 1.09 12.8
12 0.549 -175.7 2.570 28.4 0.091 -2.7 0.472 -87.2 1.19 11.9
13 0.508 165.8 2.532 16.2 0.095 -9.0 0.443 -91.4 1.27 11.1
14 0.481 142.3 2.480 2.5 0.100 -18.0 0.399 -96.7 1.34 10.5
15 0.472 116.9 2.378 -10.9 0.101 -26.7 0.342 -101.7 1.45 9.7
16 0.508 92.7 2.289 -23.8 0.103 -34.7 0.279 -107.6 1.47 9.4
17 0.573 70.4 2.160 -37.5 0.105 -42.9 0.211 -112.1 1.44 9.2
18 0.646 52.2 1.975 -51.6 0.103 -50.4 0.135 -115.3 1.44 8.9

We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales

offices.

Reference Point

(Conditions : VDS=3V,ID=30mA,Ta=25deg.C)

Gate

Source

MAG/MSG

Source

Reference Point

Drain

Publication Date : Apr., 2011

4

< Power GaAs FET >

MGF1951A

Leadless ceramic package

• Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and
more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire ore property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i) placement
of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any
malfunction or mishap.

• These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.

• Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third­party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit
application examples contained in these materials.

• All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons.
It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical in accuracies or typographical errors.
Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from
these inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.mitsubishielectric.com/).

• When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation
assumes no responsibility for any damage, liability or other loss resulting from the information contained
herein.

• Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

• The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole
ore in part these materials.

• If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country
of destination is prohibited.

• Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product
distributor for further details on these materials or the products contained therein.

© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

Keep safety first in your circuit designs!

Notes regarding these materials

Publication Date : Apr., 2011

5