MITSUBISHI MGF1951A User Manual
MITSUBISHI Proprietary
< Power GaAs FET >
MGF1951A
Leadless ceramic package
DESCRIPTION
The MGF1951A power MES FET is designed for use in S to Ku band
power amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
FEATURES
High gain and High P1dB
Glp=9.0dB , P1dB=13dBm (Typ.) @ f=12GHz
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=3V , ID=30mA
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 3,000pcs/reel
RoHS COMPLIANT
MGF1951A is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
V
GDO
V
GSO
ID
PT Total power dissipation 300 mW
Tch
T
stg
Gate to drain voltage -8 V
Gate to source voltage -8 V
Drain current 120 mA
Channel temperature 125 °C
Storage temperature -65 to +125 °C
(Ta=25°C )
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)GDO
I
V
GS(off)
P1dB Output power at 1dB gain
Glp Linear power gain
Note: P1B and Glp are tested with sampling inspection.
Gate to drain breakdown voltage
Saturated drain current
DSS
Gate to source cut-off voltage
compression
Parameter Test conditions
IG=-30µA
VGS=0V,VDS=3V
VDS=3V,ID=300µA
(Ta=25°C )
VDS=3V, ID=30mA,
f=12GHz
VDS=3V, ID=30mA,
f=12GHz, Pin=-5dBm
Outline Drawing
Fig.1
Limits Unit
MIN. TYP. MAX
-8 -15 -- V
35 60 120 mA
-0.3 -1.4 -3.5 V
11 13 -- dBm
7 9 -- dB
Publication Date : Apr., 2011
1
< Power GaAs FET >
ℵ
ℑ
ℵ
ℑ
C
2
4 A A
MGF1951A
Leadless ceramic package
Fig.1
Top
+0.20
-0.102.15
A
②
①
0
0
2
1
.
.
0
0
+
-
5
1
.
2
③
②
Side
0.20±0.1
0.80±0.1
2-R0.275
2-R0.20
①
②
Bottom
)
2
0
.
1
(
-
2
2
-
0
2
-
(
2
②
.
2
1
0
.
)
2
0
±
0
.
0
5
5
0
.
③
.
5
0
±
0
.
0
5
0
±
5
5
.
0
-
4
(0.30)
(2.30)
from "A" side view
Square shape electrode is Drain
Unit: mm
① Gate
② Source
③ Drain
Publication Date : Apr., 2011
2
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