Mitsubishi MGF1801B Datasheet
MITSUBISHI SEMICONDUCTOR GaAs FET
Nov. ´97
Test conditions
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
MGF1801B
MICROWAVE POWER GaAs FET
DESCRIPTION
The MGF1801B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and
oscillators. The hermetically sealed metalceramic package
assures minimum parasitic losses, and has a configuration suitable
for microstrip circuits.
FEATURES
• High output power at 1dB gain compression
P1dB=23dBm(TYP.) @f=8GHz
• High linear power gain
GLP=9dB(TYP.) @f=8GHz
• High reliability and stability
APPLICATION
S to X band medium-power amplifiers and oscillators.
QUALITY GRADE
• IG
RECOMMENDED BIAS CONDITIONS
• VDS=6V
• ID=100mA
• Refer to Bias Procedure
OUTLINE DRAWING
4MIN.
2
GD-10
1
2.5±0.2
0.5±0.15
0.5±0.15
3
Unit:millimeters
4MIN.
1
GATE
2
SOURCE
3
DRAIN
2
Symbol Parameter Ratings
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg
*1:TC=25˚C
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature
-65 to +175
-8
-8
250 mA
-0.6
1.5
1.2
175
Unit
V
V
mA
mA
W
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Symbol Unit
V(BR)GDO
V(BR)GSO
IGSS
IDSS
VGS(off)
gm
GLP
P1dB
Rth(ch-c)
*1:Channel to ambient
Gate to drain breakdown voltage
Gate to source breakdown voltage
Gate to source leakage current
Saturated drain current
Gate source cut-off voltage
Transconductance
Linear power gain
Output power at 1dB gain
compression
Thermal resistance *1
Parameter
IG=-200µA
IG=-200µA
VGS=-3V,VDS=0V
VGS=0V,VDS=3V
VDS=3V,ID=100µA
VDS=3V,ID=100mA
VDS=6V,ID=100mA,f=8GHz
VDS=6V,ID=100mA,f=8GHz
∆Vf method
Limits
Typ MaxMin
-8
-8
–
150
-1.5
70
7
21.8–23.0
–
–
–
200
–
90
9
–
–
–
20
250
-4.5
–
–
–
125
V
V
µA
mA
V
mS
dB
dBm
˚C/W
Nov. ´97
TYPICAL CHARACTERISTICS (Ta=25˚C)
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF1801B
MICROWAVE POWER GaAs FET
200
100
VGS=0V
0
2 10
0
4
VGS=-0.5V/step
6 8
DRAIN TO SOURCE VOLTAGE VDS(V)
PO vs. Pin
ID vs. VDS
30
25
20
15
ID=100mA
(f=8GHz)
Gain:10dB
PO
8
6
4 2
30
25
20
15
ID=100mA
PO vs. Pin
(f=12GHz)
Gain:10dB
PO
8
6
4 2
10
VDS=6V
0
-5
0 5 20 25
10515
VDS=4V
INPUT POWER Pin(dBm)
10
VDS=6V
0
-5
0 5 20 25
10515
VDS=4V
INPUT POWER Pin(dBm)
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