MITSUBISHI MGF1601B User Manual
< High-power GaAs FET (small signal gain stage) >
MGF1601B
S to X BAND / 0.15W
non - matched
DESCRIPTION
The MGF1601B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and
oscillators. The hermetically sealed metalceramic package assures
minimum parasitic lasses, and has a configuration suitable for
microstrip circuits.
FEATURES
High linear power gain
Glp=8.0dB @f=8GHz
High P1dB
P1dB=21.8dBm(TYP.) @f=8GHz
APPLICATION
S to X Band medium-power amplifiers and oscillators
QUALITY
GG
RECOMMENDED BIAS CONDITION
VDS=6V,Id=100mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -8 V
ID Drain current 250 mA
IGR Reverse gate current -0.6 mA
IGF Forward gate current 1.5 mA
PT Total power dissipation 1.2 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
Gate to drain
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
V
(BR)GDO
V
(BR)GSO
IG
SS
I
DSS
V
GS(off)
gm
GLP
P1dB
R
th(ch-c) Thermal resistance *1
*1:Channel to ambient
Gate to drain breakdown voltage Ig
Gate to source breakdown voltage Ig
Gate to source leakage current
Saturated drain current
Gate to source cut-off voltage
Transconductance
Linear Power Gain
Output power at 1dB gain compression
breakdown voltage
(Ta=25C)
VDS=0V,VGS=-3V
VDS=3V,VGS=0V 150 200 250 mA
VDS=3V,ID=100A -1.5 - -4.5 V
VDS=3V,ID=100mA 70 90 - mS
VDS=6V,ID=100mA,f=8GHz 6 8 - dB
VDS=6V,ID=100mA,f=8GHz 20.8 21.8 - dBm
ΔVf method - - 125 ℃/W
-8 V
=200A -8 - - V
=200A
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
-8 - - V
- - 20 A
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF1601B
S to X BAND / 0.15W
non - matched
MGF1601B TYPICAL CHARACTERISTICS (Ta=25C)
Publication Date : Apr., 2011
2
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