MITSUBISHI MGF1451A User Manual

MITSUBISHI Proprietary

< Power GaAs FET >

MGF1451A

Micro-X ceramic package

DESCRIPTION

The MGF1451A power GaAs MES FETis designed for use in S to Ku
band amplifiers.

FEATURES

High gain and High P1dB

Glp=10.5dB , P1dB=13dBm (Typ.) @ f=12GHz

APPLICATION

S to Ku band low noise amplifiers

QUALITY GRADE

GG

RECOMMENDED BIAS CONDITIONS

VDS=3V, ID=30mA

RoHS COMPLIANT

MGF1451A is a RoHS compliant product. RoHS compliance is
indicated by the letter “G” after the Lot Marking.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Ratings Unit

V

GDO

V

GSO

ID

PT Total power dissipation 300 mW

Tch

T

stg

Gate to drain voltage -8 V

Gate to source voltage -8 V

Drain current 120 mA

Channel temperature 175 °C

Storage temperature -55 to +125 °C

(Ta=25°C )

ELECTRICAL CHARACTERISTICS

Symbol

MIN. TYP. MAX

V

(BR)GDO

V

(BR)GSO

I

GSS Gate to source leakage current

I

DSS Saturated drain current

V

GS(off) Gate to source cut-off voltage

Glp Linear power gain

P1dB. Output power at 1dB gain

Rt Thermal resistance -- -- -- 420 ℃/W

Gate to drain breakdown voltage

Gate to source breakdown voltage

compression

Parameter Test conditions Limits Unit

(Ta=25°C)

IG=-30µA

IG=-30µA

VGS=-3V,VDS=0V

VGS=0V,VDS=3V

VDS=3V,ID=300µA

VDS=3V,

ID=30mA, f=12GHz

Outline Drawing

Fig.1

Not to be reproduced or disclosed without
permission by Mitsubishi Electric

-8 -- -- V

-8 -- -- V

-- -- 10 µA

35 60 120 mA

-0.3 -1.4 -3.5 V

9.0 10.5 -- dB

11.0 13.0 -- dB

Publication Date : Apr., 2011

1

< Power GaAs FET >

MGF1451A

Micro-X ceramic package

TYPICAL CHARACTERISTICS

D vs. VDS

80

Ta=25

70

60

=-0.2V/STEP

V

GS

I

℃

VGS=0V

(Ta=25°C)

80

70

60

Ta=25

=3V

V

DS

℃

D VS. VDS

I

50

40

30

20

DRAIN CURRENT ID(mA)

10

0

0 1 2 3 4 5

DRAIN T O SOURCE VOLTAGE V

Pout,Glp vs. Pin

25

Pout
Glp

20

15

10

Pout(dBm)

5

f=12GHz

DS

=3V

V

DS

I

=30 mA

50

40

30

20

DRAIN CURRENT ID(mA)

10

0

(V)

DS

-2.0 -1.0 0.0

GAT E TO SOURCE VOLTAGE V

(V)

GS

30

25

20

Glp(dB)

15

10

0

-10.0 -5.0 0.0 5.0 10.0

Publication Date : Apr., 2011

5

Pin(dBm)

2

< Power GaAs FET >

MGF1451A

Micro-X ceramic package

S PARAMETERS

freq S11 S21 S12 S22 K

(GHz) Mag. Angle Mag. Angle Mag. Angle Mag. Angle (dB)

1 0.986 -21.3 4.089 159.6 0.016 75.2 0.542 -15.9 0.17 24.1
2 0.953 -41.0 3.848 140.9 0.029 61.4 0.544 -31.0 0.30 21.2
3 0.921 -58.6 3.570 124.1 0.039 50.8 0.542 -43.3 0.40 19.6
4 0.886 -74.3 3.274 109.1 0.046 41.7 0.539 -52.9 0.51 18.5
5 0.850 -90.2 3.054 93.5 0.052 31.2 0.528 -64.5 0.64 17.7
6 0.810 -101.0 2.823 80.9 0.054 24.8 0.531 -72.5 0.82 17.2
7 0.784 -111.5 2.686 68.9 0.055 19.3 0.541 -79.2 0.93 16.9
8 0.748 -121.3 2.588 57.3 0.055 15.5 0.547 -85.4 1.08 14.9

9 0.714 -131.5 2.542 45.4 0.057 13.5 0.552 -91.2 1.17 14.0
10 0.667 -143.9 2.541 33.2 0.062 11.2 0.560 -96.6 1.18 13.5
11 0.606 -157.3 2.562 19.6 0.067 4.4 0.556 -103.4 1.27 12.7
12 0.521 -173.0 2.586 5.6 0.069 -4.9 0.544 -109.9 1.46 11.7
13 0.447 165.7 2.653 -9.6 0.073 -13.3 0.526 -117.9 1.52 11.4
14 0.386 134.3 2.686 -26.7 0.076 -23.5 0.496 -125.7 1.58 11.0
15 0.382 95.5 2.674 -45.2 0.078 -37.5 0.451 -135.0 1.60 10.8
16 0.460 57.9 2.619 -65.5 0.080 -54.5 0.379 -144.3 1.57 10.7
17 0.578 29.8 2.445 -86.0 0.080 -73.9 0.282 -154.0 1.54 10.5
18 0.688 8.2 2.224 -106.6 0.077 -95.0 0.169 -157.6 1.51 10.4
19 0.767 -8.0 1.979 -126.1 0.075 -117.1 0.060 -138.7 1.46 10.2
20 0.794 -20.5 1.736 -145.0 0.077 -140.2 0.083 -42.8 1.48 9.4

(Conditions:VDS=3V,IDS=30mA,Ta=25deg.C)

MSG/MAG

GaAs FET

Bottom view (MGF1451A)

1.0mm

Calibration point

Calibration point

Calibration point

Gate Drain

GND

Metal carrier

Metal carrier

Calibration point

1.1mm

Microstrip line (Z0=50Ω)

Substrate (Ceramics)
εr=9.8

②

①

③

②

①Gate
②Source
③Drain

Note

We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our

sales offices.

Publication Date : Apr., 2011

3

< Power GaAs FET >

MGF1451A

Micro-X ceramic package

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Keep safety first in your circuit designs!

Notes regarding these materials

Publication Date : Apr., 2011

4