MITSUBISHI MGF1451A User Manual
MITSUBISHI Proprietary
< Power GaAs FET >
MGF1451A
Micro-X ceramic package
DESCRIPTION
The MGF1451A power GaAs MES FETis designed for use in S to Ku
band amplifiers.
FEATURES
High gain and High P1dB
Glp=10.5dB , P1dB=13dBm (Typ.) @ f=12GHz
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=3V, ID=30mA
RoHS COMPLIANT
MGF1451A is a RoHS compliant product. RoHS compliance is
indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Ratings Unit
V
GDO
V
GSO
ID
PT Total power dissipation 300 mW
Tch
T
stg
Gate to drain voltage -8 V
Gate to source voltage -8 V
Drain current 120 mA
Channel temperature 175 °C
Storage temperature -55 to +125 °C
(Ta=25°C )
ELECTRICAL CHARACTERISTICS
Symbol
MIN. TYP. MAX
V
(BR)GDO
V
(BR)GSO
I
GSS Gate to source leakage current
I
DSS Saturated drain current
V
GS(off) Gate to source cut-off voltage
Glp Linear power gain
P1dB. Output power at 1dB gain
Rt Thermal resistance -- -- -- 420 ℃/W
Gate to drain breakdown voltage
Gate to source breakdown voltage
compression
Parameter Test conditions Limits Unit
(Ta=25°C)
IG=-30µA
IG=-30µA
VGS=-3V,VDS=0V
VGS=0V,VDS=3V
VDS=3V,ID=300µA
VDS=3V,
ID=30mA, f=12GHz
Outline Drawing
Fig.1
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
-8 -- -- V
-8 -- -- V
-- -- 10 µA
35 60 120 mA
-0.3 -1.4 -3.5 V
9.0 10.5 -- dB
11.0 13.0 -- dB
Publication Date : Apr., 2011
1
< Power GaAs FET >
MGF1451A
Micro-X ceramic package
TYPICAL CHARACTERISTICS
D vs. VDS
80
Ta=25
70
60
=-0.2V/STEP
V
GS
I
℃
VGS=0V
(Ta=25°C)
80
70
60
Ta=25
=3V
V
DS
℃
D VS. VDS
I
50
40
30
20
DRAIN CURRENT ID(mA)
10
0
0 1 2 3 4 5
DRAIN T O SOURCE VOLTAGE V
Pout,Glp vs. Pin
25
Pout
Glp
20
15
10
Pout(dBm)
5
f=12GHz
DS
=3V
V
DS
I
=30 mA
50
40
30
20
DRAIN CURRENT ID(mA)
10
0
(V)
DS
-2.0 -1.0 0.0
GAT E TO SOURCE VOLTAGE V
(V)
GS
30
25
20
Glp(dB)
15
10
0
-10.0 -5.0 0.0 5.0 10.0
Publication Date : Apr., 2011
5
Pin(dBm)
2
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